ONSEMI NVD5803N

NVD5803N
Power MOSFET
40 V, 85 A, Single N−Channel, DPAK
Features
•
•
•
•
•
Low RDS(on)
High Current Capability
Avalanche Energy Specified
AEC−Q101 Qualified
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(on) MAX
ID MAX
40 V
5.7 mW @ 10 V
85 A
Applications
• DC Motor Drive
• Reverse Battery Protection
• Glow Plug
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage − Continuous
VGS
"20
V
ID
85
A
Continuous Drain
Current (RqJC)
(Note 1)
Power Dissipation
(RqJC) (Note 1)
TC = 25°C
Steady
State
Pulsed Drain Current
TC = 100°C
TC = 25°C
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 V, VGS = 10 V, RG = 25 W,
IL(pk) = 40 A, L = 0.3 mH)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
G
S
N−CHANNEL MOSFET
4
61
PD
83
W
IDM
228
A
TJ, Tstg
−55 to
175
°C
IS
85
A
EAS
240
mJ
TL
260
°C
1 2
DPAK
CASE 369AA
(Surface Mount)
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
YWW
V58
03NG
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case (Drain)
RqJC
1.8
°C/W
Junction−to−Ambient − Steady State (Note 1)
RqJA
42
2
1 Drain 3
Gate Source
Y
WW
5803N
G
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces.
3
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
April, 2010 − Rev. 0
1
Publication Order Number:
NVD5803N/D
NVD5803N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
40
IDSS
Gate−to−Source Leakage Current
V
VGS = 0 V,
VDS = 40 V
mV/°C
TJ = 25°C
1.0
TJ = 150°C
100
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
3.5
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
1.5
−7.4
gFS
mV/°C
VGS = 10 V, ID = 50 A
4.9
5.7
mW
VGS = 5.0 V, ID = 30 A
6.7
VDS = 15 V, ID = 15 A
13.6
S
3220
pF
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
390
270
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
12.7
td(on)
12.6
nC
51
VGS = 10 V, VDS = 20 V,
ID = 50 A
3.8
12.7
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
tr
Turn−Off Delay Time
Fall Time
td(off)
VGS = 10 V, VDD = 32 V,
ID = 50 A, RG = 2.0 W
tf
ns
21.4
28.3
6.6
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
VSD
VGS = 0 V,
IS = 30 A
TJ = 25°C
0.88
TJ = 150°C
0.73
tRR
ta
tb
1.2
27.2
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 30 A
QRR
V
ns
14
13.2
17
nC
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Order Number
NVD5803NT4G
Package
Shipping†
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
NVD5803N
TYPICAL CHARACTERISTICS
160
160
140
4.8 V
100
4.6 V
80
4.4 V
60
4.2 V
40
4.0 V
20
1
2
3
4
100
80
60
TJ = 25°C
40
0
5
TJ = 125°C
2
TJ = −55°C
3
4
5
6
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
ID = 50 A
TJ = 25°C
0.008
0.006
2
4
6
8
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.008
TJ = 25°C
0.007
VGS = 5 V
0.006
VGS = 10 V
0.005
0.004
5
100000
1.8
ID = 50 A
1.6
VGS = 10 V
1.5
1.4
1.3
1.2
1.1
1.0
35
50
65
80
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.7
20
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
0
120
20
3.8 V
3.6 V
0.010
0.004
ID, DRAIN CURRENT (A)
VGS = 5 V
120
0
VDS ≥ 10 V
140
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
TJ = 25°C
10 V
VGS = 0 V
10000
TJ = 150°C
TJ = 125°C
1000
0.9
0.8
0.7
−55 −35 −15
5
25
45
65
100
85 105 125 145 165
5
10
15
20
25
30
35
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
40
NVD5803N
TYPICAL CHARACTERISTICS
3000
2500
2000
1500
1000
Coss
500
0
Crss
0
10
20
30
15
VGS, GATE−TO−SOURCE VOLTAGE (V)
Ciss
3500
C, CAPACITANCE (pF)
VGS = 0 V
TJ = 25°C
9
6
12
Qgd
3
0
6
0
5
10
15
20
25
30
35
40
45
50
0
55
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
80
VGS = 0 V
TJ = 25°C
70
IS, SOURCE CURRENT (A)
t, TIME (ns)
Qgs
Qg, TOTAL GATE CHARGE (nC)
100
td(off)
tr
td(on)
10
tf
1
10
100
60
50
40
30
20
10
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
250
VGS = 10 V
Single Pulse
TC = 25°C
100
10 ms
100 ms
10
1 ms
10 ms
dc
RDS(on) Limit
Thermal Limit
Package Limit
0.1
0.1
1
10
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
ID, DRAIN CURRENT (A)
18
VGS
VDS
DRAIN−TO−SOURCE VOLTAGE (V)
VDD = 32 V
ID = 85 A
VGS = 10 V
1
24
QT
1000
1
TJ = 25°C
12
40
30
ID = 50 A
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
4000
100
ID = 85 A
200
150
100
50
0
25
VDS, DRAISN VOLTAGE (V)
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
175
NVD5803N
RqJC(t) (°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
TYPICAL CHARACTERISTICS
10
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (sec)
Figure 13. Thermal Response
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5
0.1
1
10
NVD5803N
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA−01
ISSUE A
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
−T−
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
H
J
L
R
S
U
V
Z
H
3
U
F
J
L
D
2 PL
0.13 (0.005)
M
SOLDERING FOOTPRINT*
2.58
0.101
5.80
0.228
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.63
0.89
0.46
0.61
0.77
1.14
9.80 10.40
0.46
0.58
2.29 BSC
4.57
5.45
0.60
1.01
0.51
−−−
0.89
1.27
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
6.20
0.244
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.025 0.035
0.018 0.024
0.030 0.045
0.386 0.410
0.018 0.023
0.090 BSC
0.180 0.215
0.024 0.040
0.020
−−−
0.035 0.050
0.155
−−−
3.0
0.118
1.6
0.063
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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NVD5803N/D