NTLJS4149P Power MOSFET -30 V, -5.9 A, mCoolt Single P-Channel, 2x2 mm, WDFN Package Features •WDFN Package with Exposed Drain Pad for Excellent Thermal http://onsemi.com Conduction •2x2 mm Footprint Same as SC-88 Package •Low Profile (< 0.8 mm) for Easy Fit in Thin Environments •This is a Pb-Free Device V(BR)DSS RDS(on) MAX 62 mW @ -4.5 V -30 V 75 mW @ -2.5 V Applications S •Li Ion Battery Linear Mode Charging for Portable Power Management in Noisy Environment •DC-DC Conversion Buck/Boost Circuits •High Side Switching G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Value Unit VDSS -30 V ±12 V -4.5 A VGS Steady State TA = 25°C t≤5s TA = 25°C Steady State TA = 85°C ID Power Dissipation (Note 2) Pulsed Drain Current Steady State TA = 85°C W TA = 25°C tp = 10 ms PD -2.7 Pin 1 A W PIN CONNECTIONS 6 5 4 -2.0 0.7 IDM -18 A TJ, TSTG -55 to 150 °C Source Current (Body Diode) (Note 2) IS -1.5 A Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Operating Junction and Storage Temperature 1 2 J9MG G 3 J9 = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) PD ID MARKING DIAGRAM D WDFN6 CASE 506AP 3.2 TA = 25°C S -3.3 1.9 TA = 25°C P-CHANNEL MOSFET -5.9 t≤5s Continuous Drain Current (Note 2) D Symbol Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. Surface Mounted on FR4 Board using the minimum recommended pad size. D 1 D 2 G 3 D S 6 D 5 D 4 S (Top View) ORDERING INFORMATION Device Package Shipping† NTLJS4149PTAG WDFN6 (Pb-Free) 3000/Tape & Reel NTLJS4149PTBG WDFN6 (Pb-Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2007 July, 2007 - Rev. 0 1 Publication Order Number: NTLJS4149P/D NTLJS4149P THERMAL RESISTANCE RATINGS Symbol Max Unit Junction-to-Ambient – Steady State (Note 3) Parameter RqJA 65 °C/W Junction-to-Ambient – t ≤ 5 s (Note 3) RqJA 38 Junction-to-Ambient – Steady State Min Pad (Note 4) RqJA 180 3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 4. Surface Mounted on FR4 Board using the minimum recommended pad size. MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min -30 Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = -250 mA Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = -250 mA, Ref to 25°C Zero Gate Voltage Drain Current IDSS VDS = -24 V, VGS = 0 V mV/°C TJ = 25°C -0.1 -1.0 TJ = 85°C -1.0 -10 IGSS VDS = 0 V, VGS = ±12 V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = -250 mA Negative Threshold Temperature Coefficient VGS(TH)/TJ Gate-to-Source Leakage Current V -1.8 ±0.1 mA mA ON CHARACTERISTICS (Note 5) Drain-to-Source On-Resistance RDS(on) Forward Transconductance gFS -0.4 -1.0 3.1 V mV/°C VGS = -4.5 V, ID = -2.0 A 43 62 VGS = -2.5 V, ID = -2.0 A 56 75 VGS = -4.5 V, ID = -4.5 A 43 62 VDS = -6.0 V, ID = -3.0 A 10 S 960 pF mW CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance VGS = 0 V, f = 1.0 MHz, VDS = -15 V 130 CRSS 80 Total Gate Charge QG(TOT) 9.9 Threshold Gate Charge QG(TH) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD 2.75 td(ON) 6.9 VGS = -4.5 V, VDS = -15 V, ID = -2.0 A 15 nC 0.8 1.45 SWITCHING CHARACTERISTICS (Note 6) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time tr td(OFF) VGS = -4.5 V, VDS = -15 V, ID = -2.0 A, RG = 2.0 W tf ns 11 60 55 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C -0.75 TJ = 85°C -0.65 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = -1.5 A 35 VGS = 0 V, dIS/dt = 100 A/ms, IS = -1.5 A QRR 10 http://onsemi.com 2 V 60 ns 25 0.016 5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. -1.2 mC NTLJS4149P TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 10 VGS = -1.9 V to -7 V -1.8 V TJ = 25°C -1.7 V VDS ≥ -10 V -ID, DRAIN CURRENT (AMPS) -ID, DRAIN CURRENT (AMPS) 10 8 6 -1.6 V -1.5 V 4 -1.4 V -1.3 V 2 -1.2 V -1.1 V 2 3 4 5 4 TJ = 100°C TJ = 25°C 2 TJ = -55°C 1 2.5 2 3 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0.2 ID = -2.0 A TJ = 25°C 0.15 0.1 0.05 0 1 2 3 4 5 6 0.07 TJ = 25°C 0.06 VGS = -2.5 V 0.05 0.04 0.03 VGS = -4.5 V 1 2 3 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 4 5 6 7 8 9 10 -ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance versus Gate-to-Source Voltage Figure 4. On-Resistance versus Drain Current and Gate Voltage 100000 1.6 VGS = 0 V ID = -2.0 A VGS = -4.5 V 1.4 -IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.5 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 1 6 0 0.5 0 0 8 1.2 1.0 10000 TJ = 150°C 1000 0.8 0.6 -50 TJ = 100°C -25 0 25 50 75 100 125 150 100 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 3 30 NTLJS4149P C, CAPACITANCE (pF) VDS = 0 V VGS = 0 V TJ = 25°C Ciss 1800 1200 Crss 600 Coss 0 10 5 0 5 -VGS -VDS 10 15 20 25 QT 4 16 VDS VGS 3 12 QGS 2 QGD 8 1 4 ID = -4.5 A TJ = 25°C 0 30 0 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 2 6 4 8 QG, TOTAL GATE CHARGE (nC) 0 10 Figure 8. Gate-To-Source and Drain-To-Source Voltage versus Total Charge 100 -Is, SOURCE CURRENT (AMPS) 8 VDD = -24 V ID = -2.0 A VGS = -4.5 V t, TIME (ns) 20 5 -V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 2400 -V GS, GATE-TO-SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) td(off) tf tr 10 td(on) 10 RG, GATE RESISTANCE (OHMS) 100 Figure 9. Resistive Switching Time Variation versus Gate Resistance VGS = 0 V TJ = 25°C 6 5 4 3 2 1 0 0.2 1 1 7 0.4 0.8 0.6 1.0 -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 1.2 Figure 10. Diode Forward Voltage versus Current http://onsemi.com 4 NTLJS4149P PACKAGE DIMENSIONS WDFN6 2x2 CASE 506AP-01 ISSUE B D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. CENTER TERMINAL LEAD IS OPTIONAL. TERMINAL LEAD IS CONNECTED TO TERMINAL LEAD # 4. 6. PINS 1, 2, 5 AND 6 ARE TIED TO THE FLAG. A B ÍÍÍ ÍÍÍ ÍÍÍ E PIN ONE REFERENCE DIM A A1 A3 b b1 D D2 E E2 e K L L2 J J1 0.10 C 2X 0.10 C 2X A3 0.10 C A 0.08 C 7X A1 C D2 6X SEATING PLANE 4X SOLDERMASK DEFINED MOUNTING FOOTPRINT* e L2 L 1 3 2.30 b1 6X 0.10 C A E2 1.10 B 4 b 1 6X J J1 0.60 1.25 0.10 C A 0.05 C 0.35 0.43 NOTE 5 6 6X 6X 0.05 C K MILLIMETERS MIN MAX 0.70 0.80 0.00 0.05 0.20 REF 0.25 0.35 0.51 0.61 2.00 BSC 1.00 1.20 2.00 BSC 1.10 1.30 0.65 BSC 0.15 REF 0.20 0.30 0.20 0.30 0.27 REF 0.65 REF B 0.35 NOTE 3 BOTTOM VIEW 0.34 0.65 PITCH 0.66 DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. mCool is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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