TGF2023-05 25 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz > 44 dBm Nominal Psat 55% Maximum PAE 15 dB Nominal Power Gain Bias: Vd = 28 - 40 V, Idq = 500 mA, Vg = -3 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: 0.82 x 1.44 x 0.10 mm Primary Applications • • • Measured Performance Space Military Broadband Wireless Product Description Bias conditions: Vd = 28 - 40 V, Idq = 500 mA, Vg = -3 V Typical The TriQuint TGF2023-05 is a discrete 5.0 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-05 is designed using TriQuint’s proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2023-05 typically provides > 44 dBm of saturated output power with power gain of 15 dB. The maximum power added efficiency is 55% which makes the TGF2023-05 appropriate for high efficiency applications. Lead-free and RoHS compliant . Datasheet subject to change without notice. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] Dec 2008 © Rev A 1 TGF2023-05 Table I Absolute Maximum Ratings 1/ Symbol Parameter Value Notes 40 V 2/ Vd Drain Voltage Vg Gate Voltage Range Id Drain Current 5A Ig Gate Current 28 mA Input Continuous Wave Power 32 dBm Pin -10 to 0 V 2/ 2/ 1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device and / or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum power dissipation listed in Table IV. Table II Recommended Operating Conditions Symbol Parameter Value Vd Drain Voltage 28 - 40 V Idq Drain Current 500 mA Drain Current under RF Drive 1500 mA Id_Drive Vg Gate Voltage -3 V 2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] Dec 2008 © Rev A TGF2023-05 Table III RF Characterization Table 1/ Bias: Vd = 32 V & 40 V, Idq = 500 mA, Vg = -3 V Typical SYMBOL PARAMETER Vd = 40 V Vd = 32 V UNITS Power Tuned: Psat Saturated Output Power 44.5 43.5 dBm PAE Power Added Efficiency 46 47 % Gain Power Gain 15 15 dB Rp 2/ Parallel Resistance 87.79 68.58 Ω·mm Cp 2/ Parallel Capacitance 0.444 0.461 pF/mm ГL 3/ Load Reflection Coefficient 0.674 ‚160.9 0.692 ‚164.8 - Efficiency Tuned: Psat Saturated Output Power 42 41.5 dBm PAE Power Added Efficiency 55 57 % Gain Power Gain 19.5 19.5 dB Rp 2/ Parallel Resistance 190.2 158.1 Ω·mm Cp 2/ Parallel Capacitance 0.263 0.314 pF/mm ГL 3/ Load Reflection Coefficient 0.543 ‚133.9 0.587 ‚142.4 - 1/ Values in this table are scaled from a 1.25 mm unit GaN on SiC cell at 3.5 GHz 2/ Large signal equivalent GaN on SiC output network 3/ Optimum load impedance for maximum power or maximum PAE at 3.5 GHz. The series resistance and inductance (Rd and Ld) shown in the Figure on page 5 is excluded 3 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] Dec 2008 © Rev A TGF2023-05 Table IV Power Dissipation and Thermal Properties 1/ Parameter Test Conditions Value Notes 2/ 3/ Maximum Power Dissipation Tbaseplate = 70 ºC Pd = 20 W Tchannel = 150 ºC Tm = 2.0E+6 Hrs Thermal Resistance, θjc Vd = 40 V Id = 500 mA Pd = 20 W Tbaseplate = 70 ºC θjc = 4.0 (ºC/W) Tchannel = 150 ºC Tm = 2.0E+6 Hrs Thermal Resistance, θjc Under RF Drive Vd = 40 V Id = 1500 mA Pout = 44.5 dBm Pd = 31.8 W Tbaseplate = 23 ºC θjc = 4.0 (ºC/W) Tchannel = 150 ºC Tm = 2.0E+6 Hrs Mounting Temperature 30 Seconds 4/ 320 ºC Storage Temperature -65 to 150 ºC 1/ Assumes eutectic attach using 1mil thick 80/20 AuSn mounted to a 10mil CuMo Carrier Plate 2/ For a median life of 2E+6 hours, Power Dissipation is limited to Pd(max) = (150 ºC – Tbase ºC)/θjc. 3/ Channel operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that channel temperatures be maintained at the lowest possible levels. 4/ Channel temperatures at high drain voltages can be excessive, leading to reduced MTTF. Operation at reduced baseplate temperatures and/or pulsed RF modulation is recommended. Power Dissipated (W) Power De-rating Curve 48 44 40 36 32 28 24 20 16 12 8 4 0 Tm= 2.0E+6 Hrs -60 -40 -20 0 20 40 60 80 100 120 140 160 Baseplate Temp (C) TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] Dec 2008 © Rev A 4 TGF2023-05 Linear Model for 1.25 mm Unit GaN Cell MODEL PARAMETER Vd = 40V Idq = 19mA Vd = 32V Idq = 19mA UNITS Rg 0.56 0.56 Ω Rs 0.08 0.07 Ω Rd 0.31 0.33 Ω gm 0.134 0.138 S Cgs 1.52 1.50 pF Ri 0.24 0.23 Ω Cds 0.239 0.263 pF Rds 373.7 319.2 Ω Cgd 0.053 0.0646 pF Tau 4.11 3.57 pS Ls 0.0148 0.0147 nH Lg -0.0135 -0.013 nH Ld 0.048 0.0485 nH Rgs 1550 1950 Ω Rgd 70500 47800 Ω 5 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] Dec 2008 © Rev A TGF2023-05 Mechanical Drawing Units: millimeters Thickness: 0.100 Die x,y size tolerance: +/- 0.050 Chip edge to bond pad dimensions are shown to center of pad Ground is backside of die Bond Pad #1, #2, #3, #4 Vg 0.154 x 0.115 Bond Pad #5 Vd 0.154 x 1.010 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 6 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] Dec 2008 © Rev A TGF2023-05 Assembly Notes Component placement and adhesive attachment assembly notes: • Vacuum pencils and/or vacuum collets are the preferred method of pick up. • Air bridges must be avoided during placement. • The force impact is critical during auto placement. • Organic attachment (i.e. epoxy) can be used in low-power applications. • Curing should be done in a convection oven; proper exhaust is a safety concern. Reflow process assembly notes: • Use AuSn (80/20) solder and limit exposure to temperatures above 300°C to 3-4 minutes, maximum. • An alloy station or conveyor furnace with reducing atmosphere should be used. • Do not use any kind of flux. • Coefficient of thermal expansion matching is critical for long-term reliability. • Devices must be stored in a dry nitrogen atmosphere. Interconnect process assembly notes: • Ball bonding is the preferred interconnect technique, except where noted on the assembly diagram. • Force, time, and ultrasonics are critical bonding parameters. • Aluminum wire should not be used. • Devices with small pad sizes should be bonded with 0.0007-inch wire. Ordering Information Part Package Style TGF2023-05 GaN on SiC Die GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 7 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] Dec 2008 © Rev A