PJSR05 Low Capacitance TVS and Diode Array This diode array is configured to protect up to two data transmission lines acting as a line terminator, minimizing overshoot and undershoot conditions due to bus impedance as well as protect against over-voltage events as electrostatic discharges. Additionaly the TVS Device offers overvoltage transient protection between the operating voltage bus and ground plane. 3 4 2 SPECIFICATION FEATURES 1 Peak Power Dissipation of 350W 8/20µs Maximum Capacitance of 5.0pF at 0Vdc 1MHz Line-to-Ground I/O2 3 VREF 4 2 I/O1 1 GND Maximum Leakage Current of 1µA @ VRWM Industry Standard SMT Package SOT143 IEC61000-4-2, IEC61000-4-4 and IEC61000-4-5 Full Compliance 100% Tin Matte finish (LEAD-FREE PRODUCT) SOT143 APPLICATIONS USB 2.0 and Firewire Port Protection LAN/WLAN Access Point terminals Video Signal line protection I 2C Bus Protection SL3 Marking Code: SL3 MAXIMUM RATINGS Tj = 25°C Unless otherwise noted Rating Symbol Value Units Peak Pulse Power (8/20µs Waveform) P PPM 350 W Peak Pulse Current (8/20µs Waveform) I PP 17.5 A Operating Junction Temperature Range TJ -55 to +125 °C Storage Temperature Range Tstg -55 to +150 °C Soldering Temperature, t max = 10s TL 260 °C 3/24/2006 Page 1 www.panjit.com PJSR05 ELECTRICAL CHARACTERISTICS Parameter Tj = 25°C unless otherwise noted Min Conditions Symbol Typical VWRM Reverse Stand-Off Voltage Max Units 5 V 6.2 Reverse Breakdown Voltage VBR I BR = 1mA Reverse Leakage Current IR VR = 5V 1 µA Clamping Voltage (8/20µs) Vc I pp = 1A 9.5 V Clamping Voltage (8/20µs) Vc I pp = 10A 12 V Clamping Voltage (8/20µs) Vc I pp = 17.5A 20 V Off State Junction Capacitance Cj 0 Vdc Bias f = 1MHz Between I/O pins and GND 5 pF 0 Vdc Bias f = 1MHz Between I/O pins 3 pF V TYPICAL CHARACTERISTIC CURVES Surge Pulse Waveform Definition Non-Repetitive Peak Pulse Power vs Pulse Time 110 100 90 80 70 60 50 40 30 20 10 0 1000 50% of Ipp @ 20µs Rise time 10-90% - 8µs 0 5 10 15 20 25 30 Peak Pulse Power - Ppp (W) Percent of Ipp Pulse Waveform 100 10 1 0.1 0.01 1 10 100 1000 tim e, µsec Pulse Duration, µsec Off-State Capacitance Line to GND Clamping Voltage vs Ipp 8/20µs Surge 25 15 C, pF Ipp, Amps 20 10 5 0 6 7 8 9 10 11 12 13 14 15 Clamping Voltage, V 3/24/2006 4 3.5 3 2.5 2 1.5 1 0.5 0 0 1 2 3 4 Bias Voltage, Vdc Page 2 www.panjit.com 5 PJSR05 PACKAGE DIMENSIONS - SOT143 © Copyright PanJit International, Inc 2006 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. 3/24/2006 Page 3 www.panjit.com