PML260SN N-channel TrenchMOS standard level FET Rev. 02 — 29 May 2006 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a surface-mounted plastic package using TrenchMOS technology. 1.2 Features n Standard level threshold n Very low thermal impedance n Low profile and small footprint n Low on-state resistance 1.3 Applications n Primary side switching n Portable appliances n DC-to-DC converters 1.4 Quick reference data n VDS ≤ 200 V n RDSon ≤ 294 mΩ n ID ≤ 8.8 A n QGD = 4.2 nC (typ) 2. Pinning information Table 1. Pinning Pin Description 1, 2, 3 source (S) 4 gate (G) 5, 6, 7, 8 drain (D) Simplified outline Symbol 8 7 6 5 D G 1 2 3 4 Transparent top view SOT873-1 (HVSON8) mbb076 S PML260SN Philips Semiconductors N-channel TrenchMOS standard level FET 3. Ordering information Table 2. Ordering information Type number PML260SN Package Name Description Version HVSON8 plastic thermal enhanced very thin small outline package; no leads; SOT873-1 8 terminals; body 3.3 × 3.3 × 0.85 mm 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Conditions Min Max Unit 25 °C ≤ Tj ≤ 150 °C - 200 V - ±20 V Tmb = 25 °C; VGS = 10 V; see Figure 2 and 3 - 8.8 A Tmb = 100 °C; VGS = 10 V; see Figure 2 - 5.5 A IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 - 15 A Ptot total power dissipation Tmb = 25 °C; see Figure 1 - 50 W Tstg storage temperature −55 +150 °C Tj junction temperature −55 +150 °C Source-drain diode IS source current Tmb = 25 °C - 8.8 A ISM peak source current Tmb = 25 °C; pulsed; tp ≤ 10 µs - 15 A unclamped inductive load; ID = 3.5 A; tp = 0.05 ms; VDS ≤ 200 V; RGS = 50 Ω; VGS = 10 V; starting at Tj = 25 °C - 22 mJ Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy PML260SN_2 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 02 — 29 May 2006 2 of 12 PML260SN Philips Semiconductors N-channel TrenchMOS standard level FET 03ne36 120 03ne37 120 Ider (%) Pder (%) 80 80 40 40 0 0 0 50 100 150 200 0 50 100 150 Tmb (°C) 200 Tmb (°C) P tot P der = ------------------------ × 100 % P tot ( 25°C ) ID I der = -------------------- × 100 % I D ( 25°C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature Fig 2. Normalized continuous drain current as a function of mounting base temperature 003aab281 102 Limit RDSon = VDS / ID ID (A) tp = 10 µ s 10 100 µ s DC 1 1 ms 10 ms 10-1 10-1 1 10 102 VDS (V) 103 Tmb = 25 °C; IDM is single pulse; VGS = 10 V Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PML260SN_2 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 02 — 29 May 2006 3 of 12 PML260SN Philips Semiconductors N-channel TrenchMOS standard level FET 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter thermal resistance from junction to mounting base see Figure 4 Rth(j-mb) thermal resistance from junction to ambient Rth(j-a) [1] Conditions minimum footprint [1] Min Typ Max Unit - - 2.5 K/W - 60 - K/W Mounted on a printed-circuit board; vertical in still air. 003aab280 10 Zth(j-mb) (K/W) δ = 0.5 1 0.2 δ= P tp T 0.1 10-1 10-5 0.02 t tp 0.05 T single pulse 10-4 10-3 10-2 10-1 1 tp (s) 10 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration PML260SN_2 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 02 — 29 May 2006 4 of 12 PML260SN Philips Semiconductors N-channel TrenchMOS standard level FET 6. Characteristics Table 5. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C 200 - - V Tj = −55 °C 178 - - V Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) IDSS gate-source threshold voltage drain leakage current ID = 250 µA; VGS = 0 V ID = 1 mA; VDS = VGS; see Figure 9 and 10 Tj = 25 °C 2 3 4 V Tj = 150 °C 1.2 - - V Tj = −55 °C - - 4.4 V VDS = 160 V; VGS = 0 V Tj = 25 °C - - 1 µA Tj = 150 °C - - 100 µA IGSS gate leakage current VGS = ±20 V; VDS = 0 V - 10 100 nA RG gate resistance f = 1 MHz - 0.6 - Ω RDSon drain-source on-state resistance VGS = 10 V; ID = 2.6 A; see Figure 6 and 8 Tj = 25 °C - 250 294 mΩ Tj = 150 °C - 550 647 mΩ VGS = 6 V; ID = 2.5 A - 263 309 mΩ ID = 2.6 A; VDS = 100 V; VGS = 10 V; see Figure 11 and 12 - 13.3 - nC - 2.4 - nC - nC Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGS1 pre-VGS(th) gate-source charge - 1.15 QGS2 post-VGS(th) gate-source charge - 1.25 - nC QGD gate-drain charge - 4.2 - nC VGS(pl) gate-source plateau voltage - 4.2 - V Ciss input capacitance - 657 - pF Coss output capacitance - 74 - pF Crss reverse transfer capacitance - 25 - pF td(on) turn-on delay time - 7 - ns tr rise time - 11 - ns td(off) turn-off delay time - 19 - ns tf fall time - 7 - ns 0.8 1.2 V VGS = 0 V; VDS = 30 V; f = 1 MHz; see Figure 14 VDS = 100 V; RL = 100 Ω; VGS = 10 V; RG = 5.6 Ω Source-drain diode VSD source-drain voltage IS = 3.2 A; VGS = 0 V; see Figure 13 - trr reverse recovery time 101 - ns recovered charge IS = 3.2 A; dIS/dt = −100 A/µs; VGS = 0 V; VR = 120 V - Qr - 267 - nC PML260SN_2 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 02 — 29 May 2006 5 of 12 PML260SN Philips Semiconductors N-channel TrenchMOS standard level FET 003aab063 12 VGS (V) = 10 003aab064 800 3.6 5 3.8 4 RDSon (mΩ) ID (A) 600 8 4 400 VGS (V) = 5 3.8 4 10 3.6 200 3.4 3.2 0 0 0 1 2 3 4 5 0 VDS (V) Tj = 25 °C 4 8 ID (A) 12 Tj = 25 °C Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. Drain-source on-state resistance as a function of drain current; typical values 003aab065 12 03al52 3 ID (A) a 2 8 1 4 Tj = 150 °C 25 °C 0 0 1 2 3 4 5 0 -60 0 VGS (V) Tj = 25 °C and 150 °C; VDS > ID × RDSon 120 Tj (°C) 180 R DSon a = ----------------------------R DSon ( 25°C ) Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature PML260SN_2 Product data sheet 60 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 02 — 29 May 2006 6 of 12 PML260SN Philips Semiconductors N-channel TrenchMOS standard level FET 03aa32 5 03aa35 10−1 ID (A) VGS(th) (V) 4 3 2 min 10−2 max typ 10−3 min 10−4 typ max 10−5 1 0 −60 0 60 120 180 Tj (°C) 10−6 0 2 4 6 VGS (V) Tj = 25 °C; VDS = 5 V ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature Fig 10. Sub-threshold drain current as a function of gate-source voltage 003aab066 10 VGS (V) 8 VDS ID 6 VGS(pl) 4 VGS(th) VGS 2 QGS1 QGS2 QGS 0 0 4 8 12 QG (nC) 16 QGD QG(tot) 003aaa508 ID = 2.6 A; VDS = 100 V Fig 11. Gate-source voltage as a function of gate charge; typical values Fig 12. Gate charge waveform definitions PML260SN_2 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 02 — 29 May 2006 7 of 12 PML260SN Philips Semiconductors N-channel TrenchMOS standard level FET 003aab080 12 IS (A) 10 003aab067 103 Ciss C (pF) 8 102 6 4 150 °C Coss Tj = 25 °C 2 Crss 0 0.2 0.4 0.6 0.8 1 10 10-1 1 10 VSD (V) Tj = 25 °C and 150 °C; VGS = 0 V 102 VGS = 0 V; f = 1 MHz Fig 13. Source current as a function of source-drain voltage; typical values Fig 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values PML260SN_2 Product data sheet VDS (V) © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 02 — 29 May 2006 8 of 12 PML260SN Philips Semiconductors N-channel TrenchMOS standard level FET 7. Package outline HVSON8: plastic thermal enhanced very thin small outline package; no leads; 8 terminals; body 3.3 × 3.3 × 0.85 mm SOT873-1 X B D A E terminal 1 index area A A1 c detail X terminal 1 index area e1 C v w b e 1 M M y y1 C C A B C 4 L1 Eh L2 8 5 Dh 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1 A1 b 0.05 0.35 0.00 0.25 c D Dh E 0.2 3.4 3.2 2.3 2.2 3.4 3.2 Eh e e1 L1 L2 1.68 0.55 0.52 0.65 1.95 1.58 0.45 0.42 v w y y1 0.1 0.05 0.1 0.1 REFERENCES OUTLINE VERSION IEC JEDEC JEITA SOT873-1 --- --- --- EUROPEAN PROJECTION ISSUE DATE 05-06-16 05-06-21 Fig 15. Package outline SOT873-1 (HVSON8) PML260SN_2 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 02 — 29 May 2006 9 of 12 PML260SN Philips Semiconductors N-channel TrenchMOS standard level FET 8. Revision history Table 6. Revision history Document ID Release date Data sheet status Change notice Supersedes PML260SN_2 20060529 Product data sheet - PML260SN_1 Modifications: PML260SN_1 • The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. 20051222 Preliminary data sheet PML260SN_2 Product data sheet - - © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 02 — 29 May 2006 10 of 12 PML260SN Philips Semiconductors N-channel TrenchMOS standard level FET 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.semiconductors.philips.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Philips Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Philips Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 9.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, Philips Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — Philips Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Philips Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a Philips Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Philips Semiconductors accepts no liability for inclusion and/or use of Philips Semiconductors products in such equipment or applications and therefore such inclusion and/or use is for the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — Philips Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.semiconductors.philips.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Philips Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V. 10. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] PML260SN_2 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 02 — 29 May 2006 11 of 12 Philips Semiconductors PML260SN N-channel TrenchMOS standard level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Koninklijke Philips Electronics N.V. 2006. All rights reserved. For more information, please visit: http://www.semiconductors.philips.com. For sales office addresses, email to: [email protected]. Date of release: 29 May 2006 Document identifier: PML260SN_2