PHILIPS PMBT4403

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
PMBT4403
PNP switching transistor
Product data sheet
Supersedes data of 1999 Apr 15
2004 Jan 21
NXP Semiconductors
Product data sheet
PNP switching transistor
PMBT4403
FEATURES
PINNING
• High current (max. 600 mA)
PIN
• Low voltage (max. 40 V).
APPLICATIONS
DESCRIPTION
1
base
2
emitter
3
collector
• Industrial and consumer switching applications.
DESCRIPTION
handbook, halfpage
PNP switching transistor in a SOT23 plastic package.
NPN complement: PMBT4401.
3
3
1
MARKING
2
MARKING CODE(1)
TYPE NUMBER
PMBT4403
1
2
*2T
Top view
MAM256
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE
NUMBER
NAME
PMBT4403
−
DESCRIPTION
VERSION
plastic surface mounted package; 3 leads
SOT23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−40
V
VCEO
collector-emitter voltage
open base
−
−40
V
VEBO
emitter-base voltage
open collector
−
−5
V
IC
collector current (DC)
−
−600
mA
ICM
peak collector current
−
−800
mA
IBM
peak base current
−
−200
mA
Ptot
total power dissipation
−
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Jan 21
2
NXP Semiconductors
Product data sheet
PNP switching transistor
PMBT4403
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
VALUE
UNIT
500
K/W
note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector-base cut-off current
IE = 0; VCB = −40 V
−
−50
nA
IEBO
emitter-base cut-off current
IC = 0; VEB = −5 V
−
−50
nA
hFE
DC current gain
VCE = −1 V; (see Fig.2)
IC = −0.1 mA
30
−
IC = −1 mA
60
−
IC = −10 mA
100
−
IC = −150 mA
100
300
IC = −500 mA
20
−
VCE = −2 V
VCEsat
VBEsat
collector-emitter saturation
voltage
IC = −150 mA; IB = −15 mA
−
−400
mV
IC = −500 mA; IB = −50 mA
−
−750
mV
base-emitter saturation voltage
IC = −150 mA; IB = −15 mA
−
−950
mV
IC = −500 mA; IB = −50 mA
−
−1.3
V
Cc
collector capacitance
IE = Ie = 0; VCB = −10 V; f = 1 MHz
−
8.5
pF
Ce
emitter capacitance
IC = Ic = 0; VEB = −500 mV; f = 1 MHz
−
35
pF
fT
transition frequency
IC = −20 mA; VCE = −10 V; f = 100 MHz 200
−
MHz
−
40
ns
Switching times (between 10% and 90% levels); (see Fig.3)
ICon = −150 mA; IBon = −15 mA;
IBoff = 15 mA
ton
turn-on time
td
delay time
−
15
ns
tr
rise time
−
30
ns
toff
turn-off time
−
350
ns
ts
storage time
−
300
ns
tf
fall time
−
50
ns
2004 Jan 21
3
NXP Semiconductors
Product data sheet
PNP switching transistor
PMBT4403
MGD812
300
ndbook, full pagewidth
hFE
VCE = −1 V
200
100
0
−10−1
−1
−10
−102
Fig.2 DC current gain; typical values.
VBB
handbook, full pagewidth
RB
VCC
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
R2
Vi
DUT
R1
MGD624
Vi = −9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω.
VBB = 3.5 V; VCC = −29.5 V.
Oscilloscope: input impedance Zi = 50 Ω.
Fig.3 Test circuit for switching times.
2004 Jan 21
4
oscilloscope
IC mA
−103
NXP Semiconductors
Product data sheet
PNP switching transistor
PMBT4403
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2004 Jan 21
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
TO-236AB
5
NXP Semiconductors
Product data sheet
PNP switching transistor
PMBT4403
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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infringement and limitation of liability, unless explicitly
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published in this document, including without limitation
specifications and product descriptions, at any time and
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national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Jan 21
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/04/pp7
Date of release: 2004 Jan 21
Document order number: 9397 750 12501