DG9421/DG9422 Vishay Siliconix Precision Low-Voltage, Low-Glitch CMOS Analog Switches FEATURES BENEFITS APPLICATIONS D 2.7- thru 12-V Single Supply or "2.7- thru "6-Dual Supply D Low On-Resistance—rDS(on): 2.0 @ 12 V D Fast Switching—tON: 28 ns —tOFF: 22 ns D TTL and Low Voltage Logic D Low Leakage: 10 pA (typ) D u2000-V ESD Protection D D D D D D D D D D D D High Accuracy High Speed, Low Glitch Single and Dual Supply Capability Low rON in Small TSOP Package Low Leakage Low Power Consumption Automatic Test Equipment Data Acquisition XDSL and DSLAM PBX Systems Reed Relay Replacement Audio and Video Signal Routing DESCRIPTION Using BiCMOS wafer fabrication technology allows the DG9421/DG9422 to operate on single and dual supplies. than 1 pC) and is well suited for applications where signal switching accuracy, low noise and low distortion is critical. Designed for optimal performance at single 5 V and dual "5 V, the DG9421/9422 combine low and flat on-resistance (3 ), fast speed (tON = 38 ns) and low charge injection (less The DG9421 and DG9422 respond to opposite control logic as shown in the Truth Table. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION TRUTH TABLE TSOP-6 Logic DG9421 DG9422 V+ 1 6 IN 0 ON OFF COM 2 5 NC/NO 1 OFF ON v- 3 4 GND Top View Logic “0” v 0.8 V Logic “1” w 2.4 V Switches Shown for Logic “0” Input Device Marking: DG9421DV = 4Exxx DG9422DV = 4Fxxx ORDERING INFORMATION -40 to 85_C _ Document Number: 70679 S-21424—Rev. C, 26-Aug-02 DG9421DV 6-Pin TSOP DG9422DV www.vishay.com 1 DG9421/DG9422 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 TO 13 V GND to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V V a, IN VS, VD . . . . . . . . . -0.3 to (V+ +0.3 V) or 50 mA, whichever occurs first Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Peak Current, S or D (Pulsed 1 ms, 10% Duty Cycle) . . . . . . . . . . . . 100 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150_C Power Dissipation (Package)b 6-Pin TSOPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 570 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 7 mW/_C above 25_C SPECIFICATIONSa (SINGLE SUPPLY 12 V) Limits Test Conditions Unless Specified Parameter Symbol -40 to 85_C V+ = 12 V, V- = 0 V VIN = 2.4 V, 0.8 Vf Tempb Mind Full 0 V+ = 10.8 V, V- = 0 V IS = 5 mA, VD = 2/9 V Room Full Typc Maxd Unit 12 V 3 3.4 Analog Switch Analog Signal Rangea Drain-Source On-Resistance Switch Off Leakage Current Channel On Leakage Current VANALOG rDS(on) IS(off) VD = 1/11 V, VS = 11/1 V ID(off) 2.0 Room Full -1 -10 1 10 Room Full -1 -10 1 10 1 10 ID(on) VS = VD = 11/1 V Room Full -1 -10 Input Current, VIN Low IIL VIN Under Test = 0.8 V Full -1 0.02 1 Input Current, VIN High IIH VIN Under Test = 2.4 V Full -1 0.02 1 Room Full 20 45 49 Room Full 25 47 59 nA Digital Control A Dynamic Characteristics Turn-On Timee tON Turn-Off Timee tOFF Charge Injectione Off Isolatione Source Off Capacitancee RL = 300 , CL = 35 pF VS = 5 V See Figure 2 ns Q Vg = 0 V, Rg = 0 , CL = 1 nF Room 0.8 pC OIRR RL = 50 , CL = 5 pF, f = 1 MHz Room -60 dB Room 31 Room 30 CS(off) Drain Off Capacitancee CD(off) Channel On Capacitancee CD(on) Room 71 Positive Supply Current I+ Room Full 0.02 Negative Supply Current I- f = 1 MHz pF Power Supplies Ground Current www.vishay.com 2 IGND VIN = 0 or 12 V Room Full -1 -5 -0.002 Room Full -1 -5 -0.002 1 5 A Document Number: 70679 S-21424—Rev. C, 26-Aug-02 DG9421/DG9422 Vishay Siliconix SPECIFICATIONSa (DUAL SUPPLY "5 V) Limits Test Conditions Unless Specified Parameter Symbol -40 to 85_C V+ = 5 V, V- = -5 V VIN = 2.4 V, 0.8 Vf Tempb Mind Full -5 V+ = 5 V, V- = -5 V IS = 5 mA, VD = "3.5 V Room Full Typc Maxd Unit 5 V 2.2 3.2 3.6 Analog Switch Analog Signal Rangee Drain-Source On-Resistance VANALOG rDS(on) IS(off) Switch Off Leakage Currentg ID(off) V+ = 5.5 V, V- = -5.5 V VD = "4.5 V, VS = #4.5 V Room Full -1 -10 1 10 Room Full -1 -10 1 10 1 10 ID(on) V+ = 5.5 V, V- = -5.5 V VS = VD = "4.5 V Room Full -1 10 Input Current, VIN Lowe IIL VIN Under Test = 0.8 V Full -1 0.02 1 Input Current, VIN Highe IIH VIN Under Test = 2.4 V Full -1 0.02 1 Room Full 38 63 68 Room Full 45 83 97 Channel On Leakage Currentg nA Digital Control A Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Off Source Off Capacitancee ns Q Vg = 0 V, Rg = 0 , CL = 1 nF Room 0.6 pC OIRR RL = 50 , CL = 5 pF, f = 1 MHz Room -57 dB Room 32 Room 31 Charge Injectione Isolatione RL = 300 , CL = 35 pF VS = "3.5 V See Figure 2 CS(off) Drain Off Capacitancee CD(off) Channel On Capacitancee CD(on) Room 71 Positive Supply Currente I+ Room Full 0.03 Negative Supply Currente I- f = 1 MHz pF Power Supplies Ground Currente VIN = 0 or 5 V IGND Room Full -1 -5 -0.002 Room Full -1 -5 -0.002 1 5 A SPECIFICATIONSa (SINGLE SUPPLY 5 V) Limits Test Conditions Unless Specified Parameter Symbol V+ = 5 V, V- = 0 V VIN = 2.4 V, 0.8 Vf -40 to 85_C Tempb Mind Full 0 Typc Maxd Unit 5 V Analog Switch Analog Signal Rangee Drain-Source On-Resistance VANALOG rDS(on) V+ = 4.5 V, IS = 5 mA VD = 1 V, 3.5 V Room Full 3.6 6.0 6.6 Room Hot 43 67 74 Room Hot 30 67 80 Room 0.3 Dynamic Characteristics Turn-On Timee tON Turn-Off Timee tOFF Charge Injectione Document Number: 70679 S-21424—Rev. C, 26-Aug-02 Q RL = 300 , CL = 35 pF VS = 3.5 V, See Figure 2 Vg = 0 V, Rg = 0 , CL = 1 nF ns pC www.vishay.com 3 DG9421/DG9422 Vishay Siliconix SPECIFICATIONSa (SINGLE SUPPLY 5 V) Limits Test Conditions Unless Specified Parameter Symbol V+ = 5 V, V- = 0 V VIN = 2.4 V, 0.8 Vf -40 to 85_C Tempb Mind Typc Maxd 0.02 1 5 Unit Power Supplies Positive Supply Currente I+ Negative Supply Currente I- Ground Currente Room Hot VIN = 0 or 5 V IGND Room Hot -1 -5 -0.002 Room Hot -1 -5 -0.002 A SPECIFICATIONSa (SINGLE SUPPLY 3 V) Limits Test Conditions Unless Specified Parameter Symbol -40 to 85_C V+ = 3 V, V- = 0 V VIN = 0.4 Vf Tempb Mind Full 0 V+ = 2.7 V, V- = 0 V IS = 5 mA, VD = 0.5, 2.2 V Room Full Typc Maxd Unit 3 V 7.3 8.8 10.1 Analog Switch Analog Signal Rangee Drain-Source On-Resistance VANALOG rDS(on) IS(off) Switch Off Leakage Currentg ID(off) V+ = 3.3 V, V- = 0 V VD = 1, 2 V, VS = 2, 1 V Room Full -1 -10 1 10 Room Full -1 -10 1 10 1 10 ID(on) V+ = 3.3 V, V- = 0 V VS = VD = 1, 2 V Room Full -1 -10 Input Current, VIN Lowe IIL VIN Under Test = 0.4 V Full -1 0.02 1 Highe IIH VIN Under Test = 2.4 V Full -1 0.02 1 Room Full 90 110 125 Room Full 32 84 99 Channel On Leakage Currentg nA Digital Control Input Current, VIN A Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Charge Injectione Off Isolatione RL = 300 , CL = 35 pF VS = 1.5 V See Figure 2 ns Q Vg = 0 V, Rg = 0 , CL = 1 nF Room 0.3 pC OIRR RL = 50 , CL = 5 pF, f = 1 MHz Room -60 dB Room 35 Room 34 Room 77 Source Off Capacitancee CS(off) Drain Off Capacitancee CD(off) Channel On Capacitancee CD(on) f = 1 MHz pF Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. g. Leakage parameters are guaranteed by worst case test conditions and not subject to test. www.vishay.com 4 Document Number: 70679 S-21424—Rev. C, 26-Aug-02 DG9421/DG9422 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rON vs. VCOM and Supply Voltage rON vs. Analog Voltage and Temperature 10 10 IS = 5 mA V+ = 3.0 V r ON - On-Resistance ( ) r ON - On-Resistance ( ) T = 25_C IS = 5 mA 8 V+ = 3.0 V 6 V+ = 5.0 V 4 V+ = 10.8 V 2 8 A B 6 A C B 4 C 2 A = 85_C B = 25_C C = -40_C V+ = 12 V 0 0 0 2 4 6 8 10 12 0 1 2 VCOM - Analog Voltage (V) rON vs. Analog Voltage and Temperature 4 5 Supply Current vs. Temperature 1000 V+ = "5 V VIN = 0 V I+ - Supply Current (pA) V" = "5 V IS = 5 mA r ON - On-Resistance ( ) 3 VCOM - Analog Voltage (V) 8 6 4 A 100 B 2 C A = 85_C B = 25_C C = -40_C 10 0 -5 -3 -1 1 3 5 -60 -40 -20 Drain Voltage (V) 0 20 40 60 80 100 Temperature (_C) Leakage Current vs. Temperature Supply Current vs. Input Switching Frequency 10 m 100 V+ = 5 V V- = 0 V Leakage Current (pA) 1m I+ - Supply Current (A) V+ = 5.0 V 100 10 1 10 I(on) I(off) 100 n 1 10 n 10 100 1K 10 K 100 K Input Switching Frequences (Hz) Document Number: 70679 S-21424—Rev. C, 26-Aug-02 1M 10 M -60 -40 -20 0 20 40 60 80 100 Temperature (_C) www.vishay.com 5 DG9421/DG9422 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Leakage Current vs. Temperature Leakage vs. Analog Voltage 100 100 V+ = "5 V V+ = 5 V V- = 0 V Leakage Current (pA) Leakage Current (pA) 60 10 I(on) 1 I(off) INO(off)/INC(off) 20 ICOM(off) -20 ICOM(on) -60 0.1 -100 -60 -40 -20 0 20 40 60 80 0 100 1 3 4 5 VCOM, VNO, VNC - Analog Voltage (V) Temperature (_C) Switching Time vs. Temperature and Supply Voltage (DG9421) Leakage vs. Analog Voltage 120 400 t OFF - Switching Time ( s) V+ = 12 V V- = 0 V 300 Leakage Current (pA) 2 200 100 ICOM(on) 0 -100 INO(off)/INC(off) t ON -200 -300 100 tON V+ = 3 V 80 60 tON V+ = 5 V tOFF V+ = 5 V 40 20 ICOM(off) 2 4 6 8 10 0 -60 12 -40 -20 0 VCOM, VNO, VNC - Analog Voltage (V) 20 40 60 80 100 Temperature (_C) Insertion Loss, Off Isolation and Crosstalk vs. Frequency 10 tOFF V+ = 12 V tON V+ = 12 V -400 0 tOFF V+ = 3 V Switching Threshold vs. Supply Voltage 2.5 Loss 0 V+ = 3 V RL = 50 V T - Switching Threshold (V) Loss, OIRR, X TALK (dB) -10 -20 -30 -40 -50 OIRR -60 -70 2.0 1.5 1.0 0.5 -80 0.0 -90 100 K 1M 10 M Frequency (MHz) www.vishay.com 6 100 M 1G 0 2 4 6 8 10 12 14 V+ - Supplu Voltage (V) Document Number: 70679 S-21424—Rev. C, 26-Aug-02 DG9421/DG9422 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Charge Injection vs. Analog Voltage 8 Q - Charge Injection (pC) 6 4 V+ = 5 V 2 0 V+ = 12 V V = "5 V -2 V+ = 3 V -4 -6 -8 -6 -4 -2 0 2 4 6 8 10 12 VCOM - Analog Voltage (V) SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ NC/NO VLevel Shift/ Drive VIN V+ GND COM V- FIGURE 1. TEST CIRCUITS V+ Logic Input VS D VO IN GND RL 300 V- tOFF Switch Input* VS VO CL 35 pF Switch Output VSwitch Input* CL (includes fixture and stray capacitance) VO = VS tr <5 ns tf <5 ns 50% 0V V+ S VNC/NO RL Note: RL + rDS(on) 90% 0V tON 90% VO -V S Logic input waveform is inverted for switches that have the opposite logic sense control FIGURE 2. Switching Time Document Number: 70679 S-21424—Rev. C, 26-Aug-02 www.vishay.com 7 DG9421/DG9422 Vishay Siliconix TEST CIRCUITS VO V+ VO Rg V+ S INX D IN Vg OFF VO ON OFF CL 10 nF 3V V- GND INX V- OFF ON Q = VO x CL OFF INX dependent on switch configuration Input polarity determined by sense of switch. FIGURE 3. Charge Injection V+ C V+ D1 S1 VS Rg = 50 50 IN1 0V, 2.4 V S2 D2 VO NC RL IN2 0V, 2.4 V GND V- C VS XTALK Isolation = 20 log VO V- C = RF bypass FIGURE 4. Crosstalk V+ C V+ S VS C VO D V+ Rg = 50 0V, 2.4 V V+ S RL 50 IN Meter GND V- IN C HP4192A Impedance Analyzer or Equivalent 0 V, 2.4 V D VGND Off Isolation = 20 log V- VS C VO C = RF Bypass FIGURE 5. Off Isolation www.vishay.com 8 V- FIGURE 6. Source/Drain Capacitances Document Number: 70679 S-21424—Rev. C, 26-Aug-02