VISHAY TSDF2005W

TSDF2005W
Vishay Semiconductors
25 GHz Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low current, low–noise applications, such as in RF
front–ends, in analogue and digital cellular and
cordless phones,in analogue and digital TV systems
(e.g. satellite tuners), in high frequency oscillators up
to 12 GHz, in pagers and radar detectors.
Features
Very low noise figure
Low feedback capacitance
Very high power gain
Emitter pins are thermal leads
High transition frequency fT = 25 GHz
1
2
4
3
16712
TSDF2005W Marking: YH2
Plastic case (SOT 343R)
1 = Emitter, 2 = Base, 3 = Emitter, 4 = Collector
Absolute Maximum Ratings
Tamb = 25°C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Collector-base voltage
VCBO
10
V
Collector-emitter voltage
VCEO
3.5
V
Emitter-base voltage
VEBO
1.5
V
IC
12
mA
Ptot
40
mW
Tj
150
°C
Tstg
–65 to +150
°C
RthJA
450
K/W
Collector current
Total power dissipation
Tamb 132 °C
Junction temperature
Storage temperature range
Junction ambient
Document Number 85085
Rev. 3, 02–May–02
on glass fibre printed board
(25 x 20 x 1.5) mm3 plated with 35 µm Cu
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TSDF2005W
Vishay Semiconductors
Electrical DC Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
µA
Collector cut-off current
VCE = 5 V, VBE = 0
ICES
100
Collector-base cut-off current
VCB = 5 V, IE = 0
ICBO
100
nA
Emitter-base cut-off current
VEB = 1 V, IC = 0
IEBO
1
µA
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO
Collector-emitter saturation voltage
IC = 5 mA, IB = 0.5 mA
VCEsat
DC forward current transfer ratio
VCE = 2 V, IC = 20 mA
hFE
Test Conditions
Symbol
Transition frequency
VCE = 2 V, IC = 10 mA, f = 1 GHz
fT
25
Collector-base capacitance
VCB = 2 V, f = 1 MHz
Ccb
0.05
Collector-emitter capacitance VCE = 2 V, f = 1 MHz
Cce
0.3
pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb
0.3
pF
Noise figure
VCE = 2 V, IC = 2 mA,
ZS = ZSopt, ZL = ZLopt, f = 2 GHz
F
1.2
dB
Power gain,
maximum stable gain
VCE = 2 V, IC = 5 mA,
Gpe = Gms *)
ZS = ZSopt, ZL = ZLopt, f = 2 GHz
21
dB
Transducer gain
VCE = 2 V, IC = 5 mA,
ZS = ZL= 50 Ω, f = 2 GHz
| S21e | 2
17
dB
Third order intercept point
at output
VCE = 2 V, IC = 10 mA,
ZS = ZL= 50 Ω, f = 2 GHz
IP3
15
dBm
1 dB compression point
VCE = 2 V, IC = 10 mA,
ZS = ZL= 50 Ω, f = 2 GHz
P–1dB
5
dBm
3.5
V
0.1
0.25
50
100
150
Min.
Typ.
Max.
V
Electrical AC Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
14
Unit
GHz
0.08
pF
*) Gms = | S21e/S12e |
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Document Number 85085
Rev. 3, 02–May–02
TSDF2005W
Vishay Semiconductors
Dimensions of TSDF2005W in mm
96 12238
Document Number 85085
Rev. 3, 02–May–02
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3 (4)
TSDF2005W
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their
use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs
listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances
and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 85085
Rev. 3, 02–May–02
This datasheet has been download from:
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