QS5U26 Transistor 2.5V Drive Pch+SBD MOSFET QS5U26 zStructure Silicon P-channel MOSFET Schottky Barrier DIODE zDimensions (Unit : mm) TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 (1) 0~0.1 0.3~0.6 zFeatures 1) The QS5U26 combines Pch MOSFET with a Schottky barrier diode in a TSMT5 package. 2) Low on-state resistance with fast switching. 3) Low voltage drive (2.5V). 4) Built-in schottky barrier diode has low forward voltage. 0.85 0.4 0.16 Each lead has same dimensions Abbreviated symbol : U26 zApplications Switching zPackaging specifications Package Type Code Basic ordering unit (pieces) zEquivalent circuit Taping (5) (4) TR 3000 ∗2 QS5U26 ∗1 (1) ∗1 ESD protection diode ∗2 Body diode (2) (3) (1)Gate (2)Source (3)Anode (4)Cathode (5)Drain Rev.B 1/4 QS5U26 Transistor zAbsolute maximum ratings (Ta=25°C) <MOSFET> Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Channel temperature Power Dissipation Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 Tch PD ∗3 Limits −20 ±12 ±1.5 ±6.0 −0.75 −3.0 150 Unit V V A A A A °C 0.9 W / ELEMENT Limits 30 20 0.5 2.0 150 Unit V V A A °C 0.7 W / ELEMENT <Di > Parameter Symbol VRM VR IF IFSM ∗2 Tj Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Power Dissipation PD ∗3 <MOSFET AND Di > Parameter Total power dissipatino Symbol PD ∗3 Limits 1.25 Tstg −55 to 150 Range of strage temperature Unit W / TOTAL °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz • 1cyc. ∗3 Mounted on a ceramic board. zElectrical characteristics (Ta=25°C) <MOSFET> Parameter Symbol Min. IGSS Gate-source leakage − Drain-source breakdown voltage V(BR) DSS −20 Zero gate voltage drain current IDSS − Gate threshold voltage VGS (th) −0.7 − Static drain-source on-starte ∗ RDS (on) − resistance − Yfs ∗ 1.0 Forward transfer admittance Ciss − Input capacitance − Output capacitance Coss − Reverse transfer capacitance Crss − Turn-on delay time td (on) ∗ − Rise time tr ∗ − Turn-off delay time td (off) ∗ − Fall time tf ∗ − Total gate charge Qg − Gate-source charge Qgs Qgd − Gate-drain charge Typ. − − − − 160 180 260 − 325 60 40 10 10 35 10 4.2 1.0 1.1 Max. ±10 − −1 −2.0 200 240 340 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±12V, VDS=0V ID=−1mA, VGS=0V VDS=−20V, VGS=0V VDS=−10V, ID=−1mA ID=−1.5A, VGS=−4.5V ID=−1.5A, VGS=−4V ID=−0.75A, VGS=−2.5V VDS=−10V, ID=−0.75A VDS=−10V VGS=0V f=1MHz ID=−0.75A VDD −15V VGS=−4.5V RL=20Ω RG=10Ω VDD −15V VGS=−4.5V ID=−1.5A ∗ Pulsed <Body diode (source−drain)> Parameter Forward voltage Symbol VSD Min. − Typ. − Max. −1.2 Unit V Conditions IS=−0.75A, VGS=0V Symbol Min. − − − Typ. − − − Max. 0.36 0.47 100 Unit V V µA IF=0.1A IF=0.5A VR=20V <Di > Parameter Forward voltage VF Reverse current IR Conditions Rev.B 2/4 QS5U26 Transistor 1000 Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 0.1 0.01 0.001 0 0.5 1 1.5 2 2.5 3 3.5 4 GATE-SOURCE VOLTAGE : −VGS (V) 1000 VGS=−2.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 100 10 0.1 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) Fig.1 Typical Transfer Characteristics 10 100 Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 10 0.1 1 Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 0.1 0.01 0 0.5 1 1.5 2 100 Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 10 0.1 1 10 Fig.2 Static Drain-Source On-State Resistance vs. Drain Current (Ι) Fig.3 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) 400 Ta=25°C Pulsed ID=−0.75A ID=−1.5A 350 300 250 200 150 100 50 0 0 2 4 6 8 10 1000 12 Ta=25°C Pulsed VGS=−2.5V VGS=−4.0V VGS=−4.5V 100 10 0.1 1 10 GATE-SOURCE VOLTAGE : −VGS (V) DRAIN CURRENT : −ID (A) Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.6 Static Drain-Source On-State Resistance vs. Drain Current ( ) 10000 VGS=0V Pulsed CAPACITANCE : C (pF) REVERCE DRAIN CURRENT : −IDR (A) 10 10 VGS=−4V Pulsed DRAIN CURRENT : −ID (A) DRAIN CURRENT : −ID (A) Fig.4 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙΙ) 1 1000 DRAIN CURRENT : −ID (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 1 VGS=−4.5V Pulsed 1000 Ta=25°C f=1MHZ VGS=0V SWITCHING TIME : t (ns) VDS=−10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) DRAIN CURRENT : −ID (A) 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) zElectrical characteristic curves 1000 Ciss 100 Coss Crss 10 0.01 0.1 1 10 100 Ta=25°C VDD=−15V VGS=−4.5V RG=10Ω Pulsed 100 tf td(off) td(on) 10 tr 1 0.01 0.1 1 10 SOURCE-DRAIN VOLTAGE : −VSD (V) DRAIN-SOURCE VOLTAGE : −VDS (V) DRAIN CURRENT : −ID (A) Fig.7 Reverse Drain Current vs. Source-Drain Current Fig.8 Typical Capacitance vs. Drain-Source Voltage Fig.9 Switching Characteristics Rev.B 3/4 QS5U26 Transistor 100 REVERSE CURRENT : IR (mA) FORWARD CURRENT : IF (mA) 1000 125°C 75°C 25°C −25°C 100 10 1 0.1 0 0.1 0.2 0.3 0.4 0.5 10 125°C 1 75°C 0.1 25°C 0.01 −25°C 0.001 0.0001 0 10 20 30 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) Fig.10 Forward Current vs. Forward Voltage Fig.11 Reverse Current vs. Reverse Voltage 40 zNotice SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature, and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway. This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding temperature, generating heat of MOSFET and the reverse current. Rev.B 4/4 Appendix Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM CO.,LTD. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). 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More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev3.0