MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to 174-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation. BLOCK DIAGRAM 2 3 1 FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V) • Pout>60W, ηT>45% @ VDD=12.5V, VGG=5V, Pin=50mW • Broadband Frequency Range: 136-174MHz • Low-Power Control Current IGG=1mA (typ) at VGG=5V • Module Size: 67 x 18 x 9.9 mm 4 5 1 RF Input (Pin) 2 Gate Voltage (VGG), Power Control 3 Drain Voltage (VDD), Battery 4 RF Output (Pout) 5 RF Ground (FIN) PACKAGE CODE: H2M RoHS COMPLIANCE • RA60H1317M1A is a RoHS compliant product. • RoHS compliance is indicate by the letter “G” after the Lot Marking. • This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever ,it applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts. ORDERING INFORMATION: ORDER NUMBER SUPPLY FORM RA60H1317M1A-101 Antistatic tray, 10 modules/tray RA60H1317M1A MITSUBISHI ELECTRIC 1/9 13 Mar 2008 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA60H1317M1A MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified) SYMBOL PARAMETER VDD CONDITIONS RATING UNIT 17 V Drain Voltage VGG<5V VGG Gate Voltage VDD<12.5V, Pin=0mW 5.5 V Pin Input Power mW Pout Output Power f=136-174MHz, ZG=ZL=50Ω 100 80 W Operation Case Temperature Range -30 to +100 °C Storage Temperature Range -40 to +110 °C TYP MAX UNIT 174 MHz Tcase(OP) Tstg The above parameters are independently guaranteed. ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) SYMBOL PARAMETER f CONDITIONS MIN Frequency Range 136 Pout Output Power 60 W ηT Total Efficiency 45 % nd Harmonic VDD=12.5V VGG=5V Pin=50mW 2fo 2 3fo 3 Harmonic ρin Input VSWR IGG Gate Current — Stability VDD=10.0-15.2V, Pin=25-70mW, Pout<70W (VGG control), Load VSWR=3:1 — Load VSWR Tolerance VDD=15.2V, Pin=50mW, Pout=60W (VGG control), Load VSWR=20:1 rd -50 dBc -50 dBc 3:1 — 1 mA No parasitic oscillation More than –60dBc No degradation or destroy — — All parameters, conditions, ratings, and limits are subject to change without notice. RA60H1317M1A MITSUBISHI ELECTRIC 2/9 13 Mar 2008 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA60H1317M1A TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) rd 2nd, 3 HARMONICS versus FREQUENCY 100 -20 90 90 -25 80 70 60 60 ηT 50 50 40 40 V DD=12.5V V GG=5V Pin=50m W 30 20 30 20 ρ in 10 0 130 140 10 150 160 FREQUENCY f(MHz) -30 40 8 30 6 IDD 20 4 f=136MHz V DD=12.5V V GG=5V 10 2 0 0 -10 -5 0 5 10 15 -55 2nd -60 3rd 140 150 160 FREQUENCY f(MHz) 170 180 out (dBm) 14 60 POWER GAIN Gp(dB) 10 Gp OUTPUT POWER P 50 -50 70 DRAIN CURRENT I DD (A) out (dBm) POWER GAIN Gp(dB) OUTPUT POWER P 12 Pout -45 OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER 14 60 -40 -70 130 OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER 70 -35 -65 0 180 170 V DD=12.5V V GG=5V Pin=50m W 12 Pout 50 10 Gp 40 8 30 6 IDD 20 4 f=155MHz V DD=12.5V V GG=5V 10 2 0 20 DRAIN CURRENT IDD(A) Pout 70 HARMONICS (dBc) 80 TOTAL EFFICIENCY η T(%) 100 INPUT VSWR ρ in (-) OUTPUT POWER P out (W) OUTPUT POWER, TOTAL EFFICIENCY, and INPUT VSWR versus FREQUENCY 0 -10 INPUT POWER Pin(dBm) -5 0 5 10 15 20 INPUT POWER Pin(dBm) 70 14 60 12 Pout 50 10 Gp 40 8 30 6 IDD 20 4 f=174MHz V DD=12.5V V GG=5V 10 2 0 DRAIN CURRENT I DD (A) out (dBm) OUTPUT POWER P POWER GAIN Gp(dB) OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER 0 -10 -5 0 5 10 15 20 INPUT POWER Pin(dBm) RA60H1317M1A MITSUBISHI ELECTRIC 3/9 13 Mar 2008 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA60H1317M1A TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE 90 16 Pout 70 100 18 14 60 12 50 10 IDD 40 8 out (W) 80 20 OUTPUT POWER P f=136MHz PIN=50m W V GG=5V 90 DRAIN CURRENT I DD (A) OUTPUT POWER P out (W) 100 20 f=155MHz PIN=50m W V GG=5V 80 14 60 12 50 10 IDD 40 8 30 6 6 20 4 20 4 10 2 10 2 0 0 0 4 6 8 10 12 0 2 14 OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE 100 f=174MHz PIN=50m W V GG=5V 80 6 8 10 12 14 20 18 16 Pout 70 14 60 12 50 10 IDD 40 8 30 6 20 4 10 2 0 DRAIN CURRENT I DD (A) 90 4 DRAIN VOLTAGE VDD (V) DRAIN VOLTAGE VDD (V) out (W) 16 Pout 70 30 2 OUTPUT POWER P 18 DRAIN CURRENT I DD (A) OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE 0 2 4 6 8 10 12 14 DRAIN VOLTAGE VDD (V) RA60H1317M1A MITSUBISHI ELECTRIC 4/9 13 Mar 2008 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA60H1317M1A TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE 100 18 90 16 Pout 70 14 60 12 50 10 IDD 40 8 30 6 20 4 10 2 0 0 3.5 4.0 4.5 5.0 out (W) 80 20 OUTPUT POWER P f=136MHz PIN=50m W V DD=12.5V 90 DRAIN CURRENT I DD (A) OUTPUT POWER P out (W) 100 20 f=155MHz PIN=50m W V DD=12.5V 80 18 16 Pout 70 14 60 12 50 10 IDD 40 8 30 6 20 4 10 2 0 5.5 DRAIN CURRENT I DD (A) OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE 0 3.5 GATE VOLTAGE VGG(V) 4.0 4.5 5.0 5.5 GATE VOLTAGE VGG(V) OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE 20 f=174MHz PIN=50m W V DD=12.5V 90 80 18 16 Pout 70 14 60 12 50 10 IDD 40 8 30 6 20 4 10 2 0 DRAIN CURRENT I DD (A) OUTPUT POWER P out (W) 100 0 3.5 4.0 4.5 5.0 5.5 GATE VOLTAGE VGG(V) RA60H1317M1A MITSUBISHI ELECTRIC 5/9 13 Mar 2008 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA60H1317M1A OUTLINE DRAWING (mm) 67±1 ③ ④ 18±1 15±1 ① ② 4±0.5 10.7±1 2-R2±0.5 19.4±1 (3.26) 60±1 49.8±1 12.5±1 0.6±0.2 17±1 44±1 （2.6） （9.9） 3.1+0.6/-0.4 7.3±0.5 56±1 1 RF Input (Pin ) 2 Gate Voltage(VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case) RA60H1317M1A MITSUBISHI ELECTRIC 6/9 13 Mar 2008 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA60H1317M1A TEST BLOCK DIAGRAM DUT Power Meter 1 Signal Generator Attenuator Preamplifier Attenuator Directional Coupler 3 2 4 ZG=50Ω C1 Spectrum Analyzer 5 ZL=50Ω Directional Coupler Attenuator Power Meter C2 + DC Power Supply VGG + DC Power Supply VDD C1, C2: 4700pF, 22uF in parallel 1 RF Input (Pin) 2 Gate Voltage (VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (FIN) EQUIVALENT CIRCUIT ② ③ ④ ① ⑤ RA60H1317M1A MITSUBISHI ELECTRIC 7/9 13 Mar 2008 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA60H1317M1A PRECAUTIONS, RECOMMENDATIONS, and APPLICATION INFORMATION: Construction: This module consists of a glass-epoxy substrate soldered onto a copper flange. For mechanical protection, a metal cap is attached (which makes the improvement of RF radiation easy). The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and matching circuits. Wire leads soldered onto the glass-epoxy substrate provide the DC and RF connection. Following conditions must be avoided: a) Bending forces on the glass-epoxy substrate (for example, by driving screws or from fast thermal changes) b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion) c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichloroethylene) d) Frequent on/off switching that causes thermal expansion of the resin e) ESD, surge, overvoltage in combination with load VSWR, and oscillation ESD: This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required. Mounting: A thermal compound between module and heat sink is recommended for low thermal contact resistance. The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board. M3 screws are recommended with a tightening torque of 0.4 to 0.6 Nm. Soldering and Defluxing: This module is designed for manual soldering. The leads must be soldered after the module is screwed onto the heat sink. The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second. Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=60W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are: Pout Rth(ch-case) IDD @ ηT=45% VDD Pin Stage (W) (W) (V) (°C/W) (A) st 1 0.05 5.0 2.1 0.8 12.5 2nd 5.0 60.0 0.5 9.8 The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are: Tch1 = Tcase + (12.5V x 0.8A - 5.0W + 0.05W) x 2.1°C/W = Tcase + 10.6 °C Tch2 = Tcase + (12.5V x 9.8A - 60W + 5.0W) x 0.5°C/W = Tcase + 33.8 °C For long-term reliability, it is best to keep the module case temperature (Tcase) below 90°C. For an ambient temperature Tair=60°C and Pout=60W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / ηT ) Pout + Pin ) of the heat sink, including the contact resistance, is: Rth(case-air) = (90°C - 60°C) / (60W/45% – 60W + 0.05W) = 0.41 °C/W When mounting the module with the thermal resistance of 0.41 °C/W, the channel temperature of each stage transistor is: Tch1 = Tair + 40.6 °C Tch2 = Tair + 63.8 °C The 175°C maximum rating for the channel temperature ensures application under derated conditions. RA60H1317M1A MITSUBISHI ELECTRIC 8/9 13 Mar 2008 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA60H1317M1A Output Power Control: By the gate voltage (VGG). Around VGG=4V, the output power and drain current increases substantially. Around VGG=4.5V (typical) to VGG=5V (maximum), the nominal output power becomes available. Load condition of Output terminal: This module suppose to use on the condition that load impedance is 50ohm. On the over load condition, this module run into the short mode in the worst case and the module involve the risk of burn out and smoking of parts including the substrate in the module. Oscillation: To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor. When an amplifier circuit around this module shows oscillation, the following may be checked: a) Do the bias decoupling capacitors have a low inductance pass to the case of the module? b) Is the load impedance ZL=50Ω? c) Is the source impedance ZG=50Ω? Frequent on/off switching: In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips and can result in reduced or no output power. The bond wires in the resin will break after long-term thermally induced mechanical stress. Quality: Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions exceeding those of mobile radios. This module technology results from more than 20 years of experience, field proven in tens of millions of mobile radios. Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout, which are caused by improper handling or exceeding recommended operating conditions. Few degradation failures are found. Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction or mishap. RA60H1317M1A MITSUBISHI ELECTRIC 9/9 13 Mar 2008