RH07 Operational Amplifier U W W W U DESCRIPTIO ABSOLUTE The RH07 is a precision op amp which provides very low offset voltage, low drift and low noise. In the design, processing and testing of the device, particular attention has been paid to the optimization of the entire distribution of several key parameters. The wafer lots are processed to LTC’s in-house Class S flow to yield circuits usable in stringent military applications. Supply Voltage ..................................................... ±22V Differential Input Voltage ...................................... ±30V Input Voltage ........................................................ ±22V Output Short-Circuit Duration (Note 3) ........... Indefinite Operating Temperature Range ............. – 55°C to 125°C Storage Temperature Range ................ – 65°C to 150°C Lead Temperature (Soldering, 10 sec)................. 300°C AXI U RATI GS For complete electrical specifications, performance curves, application notes and applications circuits, see the OP-07 data sheet. W U U U U PACKAGE/I FOR ATIO BUR -I CIRCUIT TOP VIEW VOS TRIM 10k 8 VOS TRIM 1 2 –IN 2 7 – 6 200Ω 3 10k 5 NC +IN 3 4 V– 1 4 –20V 6 OUT + 8 + 7 V+ – 20V 30pF H PACKAGE 8-LEAD TO-5 METAL CAN RH07 BI TOP VIEW VOS TRIM 1 –IN 2 – +IN 3 + V– 4 8 VOS TRIM 7 V+ 6 OUT 5 NC J8 PACKAGE 8-LEAD CERAMIC DIP Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of circuits as described herein will not infringe on existing patent rights. 1 RH07 TABLE 1: ELECTRICAL CHARACTERISTICS (Pre-Irradiation) (Note 5) SYMBOL PARAMETER VOS ∆VOS ∆Temp ∆VOS ∆Time IOS ∆IOS ∆Temp CONDITIONS NOTES Input Offset Voltage 1 Avg Input Offset Voltage Drift: Without External Trim With External Trim Null Pot = 20kΩ 3 3 Long-Term Input Offset Voltage Stability MIN TA = 25°C TYP MAX 75 4 200 2,3 2.8 1 5.6 3 2,3 50 ±3 µV µV/Mo 1 Input Offset Current UNITS µV/°C µV/°C 1.3 1.3 2,3 Avg Input Bias Current Drift SUB- –55°C ≤ TA ≤ 125°C SUBGROUP MIN TYP MAX GROUP ±6 pA/°C IB Input Bias Current ∆IB ∆Temp Avg Input Bias Current Drift en Input Noise Voltage 0.1Hz to 10Hz 3 0.6 µVP-P Input Noise Voltage Density fO = 10Hz fO = 100Hz fO = 1000Hz 4 3 3 18 13 11 nV/√Hz nV/√Hz nV/√Hz Input Noise Current 0.1Hz to 10Hz 3 30 pAP-P Input Noise Current Density fO = 10Hz fO = 100Hz fO = 1000Hz 3 3 3 0.80 0.23 0.17 in RIN 3 Input Resistance: Differential Mode Common Mode 3 Input Voltage Range 3 VCM = ±13V Common-Mode Rejection Ratio PSRR Power Supply Rejection Ratio VS = ±3V to ±18V AVOL Large-Signal Voltage Gain 50 RL ≥ 2k, VO = ±10V RL ≥ 500Ω, VO = ±0.5V VS = ±3V 3 nA pA/°C pA/√Hz pA/√Hz pA/√Hz 20 MΩ GΩ ±13.5 ±13.5 V 110 1 106 2,3 dB 100 1 94 2,3 dB 200 150 4 150 5,6 V/mV V/mV Maximum Output Voltage Swing RL ≥ 10k RL ≥ 2k RL ≥ 1k SR Slew Rate RL ≥ 2k 3 0.1 GBW Closed-Loop Bandwidth AVCL = 1 3 0.4 PD Power Dissipation VS = ±15V VS = ±3V 2 2,3 200 CMRR VOUT 1 nA ±12.5 ±12.0 ±10.5 4 4 4 ±12.0 5,6 V/µs MHz 120 6 1 1 mW mW RH07 TABLE 1A: ELECTRICAL CHARACTERISTICS 10KRAD(Si) SYMBOL PARAMETER CONDITIONS (Post-Irradiation) (Note 6) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si) NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS VOS Input Offset Voltage 90 150 200 250 300 µV IOS Input Offset Current 2.8 4 8 12 20 nA IB Input Bias Current ±3 ±10 ±25 ±50 ±100 nA ±13.5 ±13.5 ±13.5 ±13.5 ±13.5 V CMRR Common-Mode Rejection Ratio VCM = ±13V 110 110 105 100 95 dB PSRR Power Supply Rejection Ratio VS = ±3V to ±18V 100 100 100 95 90 dB AVOL Large-Signal Voltage Gain RL ≥ 2k, VO = ±10V 200 200 180 150 120 V/mV VOUT Maximum Output Voltage Swing RL ≥ 10k ±12.5 ±12.5 ±12.5 ±12.5 ±12.5 V SR Slew Rate RL ≥ 2k 0.1 0.1 0.1 0.075 0.05 V/µs PD Power Dissipation 120 120 120 120 120 mW 1 Input Voltage Range 3 Note 1: Offset voltage is measured with high speed test equipment approximately 0.5 seconds after power is applied. Note 2: Long-term input offset voltage stability refers to the averaged trend line of VOS vs. time over extended periods after the first 30 days of operation. Excluding the initial hour of operation, changes in VOS during the first 30 days are typically 2.5µV. Note 3: Parameter is guaranteed by design, characterization, or correlation to other tested parameters. Note 4: 10Hz noise voltage density is sample tested on every lot to an LTPD of 15. Devices 100% tested at 10Hz are available on request. Note 5: VS = ±15V, VCM = 0V, unless otherwise noted. Note 6: TA = 25°C, VS = ±15V, VCM = 0V, unless otherwise noted. U W TABLE 2: ELECTRICAL TEST REQUIRE E TS MIL-STD-883 TEST REQUIREMENTS SUBGROUP Final Electrical Test Requirements (Method 5004) 1*,2,3,4,5,6 Group A Test Requirements (Method 5005) 1,2,3,4,5,6 Group B and D for Class S, and Group C and D for Class B End Point Electrical Parameters (Method 5005) PDA Test Notes The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883 Class B. The verified failures of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burnin in that lot shall be used to determine the percent for the lot. Linear Technology Corporation reserves the right to test to tighter limits than those given. 1 * PDA Applies to subgroup 1. See PDA Test Notes. U TOTAL DOSE BIAS CURRE T 10k 15V – 10k 8V + –15V RH07 F01 3 RH07 U W TYPICAL PERFOR A CE CHARACTERISTICS Negative Slew Rate Positive Slew Rate 0.4 150 VS = ±15V RL = 2k VS = ±15V RL = 2k 0.3 0.2 0.1 VS = ±15V VCM = 0V 100 INPUT OFFSET VOLTAGE (µV) NEGATIVE SLEW RATE (V/µs) POSITIVE SLEW RATE (V/µs) Input Offset Voltage 0.4 0.3 0.2 50 0 –50 –100 0.1 –150 0 1 10 100 TOTAL DOSE KRAD (Si) 0 1000 –200 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH07 G01 Open-Loop Gain Common-Mode Rejection Ratio Input Bias Current 170 VS = ±15V VCM = 0V INPUT BIAS CURRENT (nA) 60 130 120 110 100 COMMON-MODE REJECTION RATIO (dB) VS = ±15V RL = 2k VOUT = ±10V 50 40 30 20 10 90 0 80 1 10 100 TOTAL DOSE KRAD (Si) 1000 VS = ±15V VCM = ±13V 160 150 140 130 120 110 100 1 10 100 TOTAL DOSE KRAD (Si) 1000 1 10 100 TOTAL DOSE KRAD (Si) RH07 G05 RH07 G04 Input Offset Current 1000 RH07 G06 Power Supply Rejection Ratio 140 6 POWER SUPPLY REJECTION RATIO (dB) VS = ±15V VCM = 0V INPUT OFFSET CURRENT (nA) 1000 RH07 G03 70 140 10 100 TOTAL DOSE KRAD (Si) RH07 G02 150 VOLTAGE GAIN (dB) 1 4 2 0 –2 VS = ±3V TO ±18V 130 120 110 100 90 80 70 –4 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH07 G07 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH07 G08 I.D. No. 66-10-0170 4 Linear Technology Corporation LT/LT 0803 REV B • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7487 (408) 432-1900 ● FAX: (408) 434-0507 ● TELEX: 499-3977 LINEAR TECHNOLOGY CORPORATION 1993