4V Drive Nch MOSFET RW1E014SN zDimensions (Unit : mm) zStructure Silicon N-channel MOSFET WEMT6 zFeatures 1) Low On-resistance, High speed switching. 2) Built-in G-S Protection Diode. 3) Space Saving, Small Surface Mount Package (WEMT6). zApplications Switching (5) (4) (1) (2) (3) Abbreviated symbol : PN zPackaging specifications Package Type (6) zInner circuit Taping Code T2R Basic ordering unit (pieces) 8000 (6) (5) (4) ∗2 RW1E014SN ∗1 (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (3) (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation Channel temperature Range of Storage temperature Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits 30 ±20 ±1.4 ±2.8 0.5 2.8 0.7 150 −55 to +150 Unit V V A A A A W °C °C Symbol Rth (ch-a) ∗ Limits 179 Unit °C / W ∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board zThermal resistance Parameter Channel to ambient ∗ When mounted on a ceramic board www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/4 2009.06 - Rev.A Data Sheet RW1E014SN zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Parameter − 30 − 1.0 − − − 1 − − − − − − − − − − − 170 250 270 − 70 15 12 6 6 13 8 ±10 − 1 2.5 240 350 380 − − − − − − − − Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time RDS (on) ∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd ∗ ∗ ∗ ∗ ∗ Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns ∗ − 1.4 − nC ∗ − 0.6 − nC ∗ − 0.3 − nC Conditions VGS= ±20V, VDS=0V ID= 1mA, VGS=0V VDS= 30V, VGS=0V VDS= 10V, ID= 1mA ID= 1.4A, VGS= 10V ID= 1.4A, VGS= 4.5V ID= 1.4A, VGS= 4V VDS= 10V, ID= 1.4A VDS= 10V VGS=0V f=1MHz VDD 15V ID= 0.7A VGS= 10V RL 21Ω RG=10Ω VDD 15V ID= 1.4A VGS= 5V RL 11Ω RG=10Ω ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol Min. Typ. Max. Unit VSD ∗ − − 1.2 V Conditions IS= 1.4A, VGS=0V ∗Pulsed www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/4 2009.06 - Rev.A Data Sheet RW1E014SN zElectrical characteristics curves 1000 100 Ciss Coss Crss tf 100 td (off) 10 td (on) tr 0.1 1 10 1 0.01 100 0.1 DRAIN-SOURCE VOLTAGE : VDS (V) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (mΩ) DRAIN CURRENT : ID (A) Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 0.01 0.001 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1 0 1 100 1 10 2 3 TOTAL GATE CHARGE : Qg (nC) Fig.3 Dynamic Input Characteristics 10 800 700 ID=1.4A 600 500 ID=0.7A 400 300 200 VGS=0V Pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 100 0 0 2 4 6 8 10 0.01 0.0 10000 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 100 10 0.01 0.1 1 1.0 1.5 Fig.6 Source Current vs. Source-Drain Voltage VGS=4.5V Pulsed 1000 0.5 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage STATIC DRAIN- SOURCE ON-STATE RESISTANCE : RDS(on) (mΩ) STATIC DRAIN- SOURCE ON-STATE RESISTANCE : RDS(on) (mΩ) STATIC DRAIN- SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 2 GATE SOURCE VOLTAGE : VGS (V) VGS=10V Pulsed 10 0.01 3 Ta=25°C 900 Pulsed Fig.4 Typical Transfer Characteristics 1000 4 0 10 1000 GATE-SOURCE VOLTAGE : VGS (V) 10000 5 Fig.2 Switching Characteristics VDS=10V Pulsed 1 6 DRAIN CURRENT : ID (A) Fig.1 Typical Capacitance vs. Drain-Source Voltage 10 1 SOURCE CURRENT : IS (A) 1 0.01 Ta=25°C 9 VDD=15V ID=1.4A 8 RG=10Ω Pulsed 7 10 10000 STATIC DRAIN- SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 10 10 Ta=25°C VDD=15V VGS=10V RG=10Ω Pulsed GATE SOURCE VOLTAGE : VGS (V) Ta=25°C f=1MHz VGS=0V SWITCHING TIME : t (ns) CAPACITANCE : C (pF) 1000 VGS=4V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 1000 100 10 0.01 0.1 1 10 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙ ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙΙ ) 1000 Ta=25°C Pulsed VGS=4V VGS=4.5V VGS=10V 100 0.1 1 10 DRAIN CURRENT : ID (A) Fig.10 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 3/4 2009.06 - Rev.A Data Sheet RW1E014SN zMeasurement circuit Pulse Width VGS ID VDS RL VDS 50% 10% D.U.T. VDD RG 90% 50% 10% VGS 10% 90% td(on) 90% td(off) tr ton Fig.1-1 Switching Time Measurement Circuit tr toff Fig.1-2 Switching Waveforms VG VGS ID VDS Qg VGS RL D.U.T. IG (Const.) RG Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform zNotice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 4/4 2009.06 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). 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