S506TY/S506TYR/S506TYRW VISHAY Vishay Semiconductors MOSMIC® for TV-Tuner Prestage with 5 V Supply Voltage SOT 143 2 Comments 1 MOSMIC - MOS Monolithic Integrated Circuit Features • Easy Gate 1 switch-off with PNP switching transistors inside PLL • Integrated gate protection diodes • Low noise figure, high gain • Typical forward transadmittance of 28 mS • Partly internal self biasing-network on chip • Superior cross modulation at gain reduction • High AGC-range with soft slope • Main AGC control range from 3 V to 0.5 V • Supply voltage 5 V (3 V to 7 V) • SMD package, standard and reverse pinning 3 4 SOT 143R 1 2 4 3 SOT 343R 1 2 4 3 16904 Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled VHF and UHF input stages, such as in digital and analog TV tuners. RFC C block AGC C block RF in VGG (VRG1) VDD(VDS) D G2 RF out G1 S C block RG1 Document Number 85095 Rev. 1, 21-Oct-02 13650 Mechanical Data Typ: S506TY Case: Plastic case (SOT 143) Weight: 8 mg Pinning: 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 Typ: S506TYR Case: Plastic case (SOT 143R) Weight: 8 mg Pinning: 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 Typ: S506TYRW Case: Plastic case (SOT 343R) Weight: 6 mg Pinning: 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 www.vishay.com 1 S506TY/S506TYR/S506TYRW VISHAY Vishay Semiconductors Parts Table Part Marking Package S506TY Y06 SOT143 S506TYR Y6R SOT143R S506TYRW WY6 SOT343R Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value VDS 8 V ID 30 mA ± IG1/G2SM 10 mA Gate 1 - source voltage + VG1SM 6 V - VG1SM 1.5 V Gate 2 - source voltage ± VG2SM 6 V Ptot 200 mW Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Total power dissipation Tamb ≤ 60 °C Unit Channel temperature TCh 150 °C Storage temperature range Tstg - 55 to + 150 °C Symbol Value Unit RthChA 450 K/W Maximum Thermal Resistance Parameter Channel ambient Test condition 1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 µm Cu Electrical DC Characteristics Tamb = 25 °C, unless otherwise specified Parameter Symbol Min V(BR)DSS 12 Gate 1 - source breakdown voltage + IG1S = 10 mA, VG2S = VDS = 0 + V(BR)G1SS 7 10 Gate 2 - source breakdown voltage ± IG2S = 10 mA, VG1S = VDS = 0 ± V(BR)G2SS 7 10 V 20 nA Drain - source breakdown voltage Test condition ID = 10 µA, VG1S = VG2S = 0 Gate 1 - source leakage current + VG1S = 5 V, VG2S = VDS = 0 + IG1SS Gate 2 - source leakage current ± VG2S = 5 V, VG1S = VDS = 0 ± IG2SS Drain - source operating current VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 56 kΩ Gate 1 - source cut-off voltage Gate 2 - source cut-off voltage Typ. Max Unit V IDSO 8 12 VDS = 5 V, VG2S = 4, ID = 20 µA VG1S(OFF) 0.3 VDS = VRG1 = 5 V, RG1 = 56 kΩ, ID = 20 µA VG2S(OFF) 0.3 1.0 V 20 nA 17 mA 1.0 V 1.2 V Electrical AC Characteristics Tamb = 25 °C, unless otherwise specified VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 56 kΩ, ID = IDSO, f = 1 MHz Symbol Min Typ. Max Unit Forward transadmittance Parameter |y21s | 23 28 33 mS Gate 1 input capacitance Cissg1 2.5 3.0 pF Feedback capacitance Crss 20 fF Output capacitance Coss 0.9 pF Document Number 85095 Rev. 1, 21-Oct-02 Test condition www.vishay.com 2 S506TY/S506TYR/S506TYRW VISHAY Vishay Semiconductors Parameter Power gain Test condition Symbol Min Typ. Max Unit GS = 2 mS, BS = BSopt, GL = 0.5 mS, BL = BLopt, f = 200 MHz Gps 32 dB GS = 2 mS, BS = BSopt, GL = 1 mS, BL = BLopt, f = 400 MHz Gps 28 dB GS = 3.3 mS, BS = BSopt, GL = 1 mS, BL = BLopt, f = 800 MHz Gps 22 dB AGC range VDS = 5 V, VG2S = 0.5 to 4 V, f = 200 MHz Gps 50 dB Noise figure GS = GL = 20 mS, BS = BL = 0, f = 50 MHz F 4.5 6.0 dB GS = 2 mS, GL = 1 mS, BS = BSopt, f = 400 MHz F 1.0 1.6 dB GS = 3.3 mS, G L = 1 mS, BS = BSopt, f = 800 MHz F 1.5 2.3 dB Cross modulation Input level for k = 1 % @ 0 dB AGC fw = 50 MHz, funw = 60 MHz Xmod 90 dBµV Input level for k = 1 % @ 40 dB AGC fw = 50 MHz, funw = 60 MHz Xmod 105 dBµV Package Dimensions in mm 96 12240 96 12239 Document Number 85095 Rev. 1, 21-Oct-02 www.vishay.com 3 S506TY/S506TYR/S506TYRW VISHAY Vishay Semiconductors 96 12238 Document Number 85095 Rev. 1, 21-Oct-02 www.vishay.com 4 S506TY/S506TYR/S506TYRW VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Seminconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 85095 Rev. 1, 21-Oct-02 www.vishay.com 5