Contents Features........................................................... 1 Applications ..................................................... 1 Pin Assignment................................................ 1 Block Diagram ................................................. 2 Selection Guide ............................................... 3 Output Configurations...................................... 4 Advantage over the S-805 Series.................... 5 Absolute Maximum Ratings............................. 6 Electrical Characteristics ................................. 7 Test Circuits................................................... 23 Technical Terms ............................................ 24 Operation ....................................................... 26 Dimensions.................................................... 28 Taping............................................................ 29 Magazine Dimensions ................................... 31 Markings ........................................................ 32 Characteristics............................................... 33 Measuring Circuits ......................................... 36 Application Circuit Examples ......................... 37 Notes ............................................................. 39 Frequently Asked Questions......................... 40 * S-807 Series will be summarized into S-808 Series. S-807 Series HIGH-PRECISION VOLTAGE DETECTOR The S-807 Series is an adjustment-free high-precision voltage detector made using the CMOS process. The output voltage is fixed internally, with an accuracy of ±2.4%. Two output types are available, Nch opendrain and CMOS output (active “H” and “L”), both of which have various product lineups. This series features much lower current consumption and higher detection voltage accuracy than the S-805 Series. Superminiature package is added for the S-807 Series, the S-807XXSX Series. This small SOT-23-5 style package allows the designer to shrink the size of his finished product. Electrical specs for the S807XXSX Series are the same as the standard S-807 Series. Output forms of the S-807XXSX Series are Nch open-drain and CMOS active “L”. Features • Ultra-low current consumption 1.0 µA typ. (VDD=4.5 V) • High-precision detection voltage ±2.4% • Wide operating voltage range 1.0 to 15 V • Good hysteresis characteristics 5% typ. • Wide operating temperature range -30°C to+80°C • 3 output forms : Nch open-drain, CMOS output active H , active L • TO-92, SOT-89-3 and SOT-23-5 package Applications • • • • • Battery checker Battery backup for memories Power failure detector Reset for microcomputer Store signal detector for nonvolatile RAM Pin Assignment (1) TO-92 (2) SOT-89-3 1 OUT (3) SOT-23-5 Top view Top view 5 2 VDD 3 VSS 1 OUT 2 VDD 2 VDD 3 VSS 3 VSS 1 1 1 2 3 2 4 1 OUT 3 2 4 NC 5 NC 3 Bottom view Figure 1 Seiko Instruments Inc. 1 HIGH-PRECISION VOLTAGE DETECTOR S-807 Series Block Diagram (1) Nch open-drain output VDD 2 + VSS (2) CMOS active low output 1 OUT 1 OUT 3 VDD 2 * + VSS 3 (3) CMOS active high output VDD 2 * - 1 + VSS 3 * Parasitic diode Figure 2 2 Seiko Instruments Inc. OUT HIGH-PRECISION VOLTAGE DETECTOR S-807 Series Selection Guide Table 1 Detection voltage range (V) CMOS output (Low) Hysteresis width typ. (V) TO-92 SOT-89-3* CMOS output (High) SOT-23-5* TO-92 SOT-89-3* Nch open-drain TO-92 SOT-89-3* SOT-23-5* 1.5 V±2.4% 0.075 S-80715AL-AC-X S-80715AN-DC-X 1.6 V±2.4% 0.08 S-80716AL-AD-X S-80716AN S-80716AN-DD-X 1.7 V±2.4% 0.085 S-80717AL S-80717AL-AE-X 1.8 V±2.4% 0.09 S-80718AL S-80718AL-AF-X S-80718SL-AF-X 1.9 V±2.4% 0.095 S-80719AL S-80719AL-AG-X S-80719SL-AG-X 2.0 V±2.4% 0.1 2.1 V±2.4% 0.105 S-80721AL S-80721AL-AJ-X 2.2 V±2.4% 0.11 S-80722AL S-80722AL-AK-X 2.3 V±2.4% 0.115 S-80723AL S-80723AL-AL-X S-80723SL-AL-X S-80723AN S-80723AN-DL-X S-80723SN-DL-X 2.4 V±2.4% 0.12 S-80724AL S-80724AL-AM-X S-80724AN S-80724AN-DM-X S-80724SN-DM-X 2.5 V±2.4% 0.125 S-80725AL S-80725AL-AN-X S-80725SL-AN-X 2.6 V±2.4% 0.13 2.7 V±2.4% 0.135 S-80727AL S-80727AL-AQ-X S-80727SL-AQ-X S-80727AN S-80727AN-DQ-X S-80727SN-DQ-X 2.8 V±2.4% 0.14 S-80728AL-AR-X S-80728SL-AR-X S-80728AN S-80728AN-DR-X S-80728SN-DR-X 2.9 V±2.4% 0.145 S-80729AL S-80729AL-AS-X 3.0 V±2.4% 0.15 S-80730AL S-80730AL-AT-X S-80730SL-AT-X 3.1 V±2.4% 0.155 S-80731AL S-80731AL-AV-X 3.2 V±2.4% 0.16 S-80732AL S-80732AL-AW-X S-80732SL-AW-X S-80732AN S-80732AN-DW-X 3.3 V±2.4% 0.165 S-80733AL S-80733AL-AX-X S-80733SL-AX-X S-80733AH S-80733AN S-80733AN-DX-X S-80733SN-DX-X 3.4 V±2.4% 0.17 S-80734AL S-80734AL-AY-X S-80734AN S-80734AN-DY-X 3.5 V±2.4% 0.175 S-80735AL S-80735AL-AZ-X S-80735SL-AZ-X S-80735AN S-80735AN-DZ-X S-80735SN-DZ-X 3.6V±2.4% 0.18 S-80736AL-A0-X S-80736AN S-80736AN-D0-X 3.7V±2.4% 0.185 S-80737AL S-80737AL-A1-X S-80737AN S-80737AN-D1-X 3.8 V±2.4% 0.19 S-80738AL S-80738AL-A2-X S-80738AN S-80738AN-D2-X 3.9 V±2.4% 0.195 S-80739AL S-80739AL-A3-X S-80739AN S-80739AN-D3-X 4.0 V±2.4% 0.2 4.1 V±2.4% 0.205 S-80741AL S-80741AL-A5-X 4.2 V±2.4% 0.21 S-80742AL S-80742AL-A6-X S-80742SL-A6-X S-80742AN S-80742AN-D6-X S-80742SN-D6-X 4.3 V±2.4% 0.215 S-80743AL S-80743AL-A7-X S-80743AN S-80743AN-D7-X 0.22 S-80744AL S-80744AL-A8-X S-80744AN S-80744AN-D8-X S-80744SN-D8-X 4.4 V±2.4% 4.295 to 4.605 S-80717AN S-80717AN-DE-X S-80717SN-DE-X S-80718AH-BF-T1 S-80718AN S-80718AN-DF-X S-80719AN S-80719AN-DG-X S-80719SN-DG-X S-80720AL-AH-X S-80720SL-AH-X S-80720AN S-80720AN-DH-X S-80720SN-DH-X S-80721SL-AJ-X S-80721AN S-80721AN-DJ-X S-80721SN-DJ-X S-80722AN S-80722AN-DK-X S-80725AH-BN-X S-80725AN S-80725AN-DN-X S-80725SN-DN-X S-80726AL-AP-X S-80726AN S-80726AN-DP-X S-80729AN-DS-X S-80730AN S-80730AN-DT-X S-80730SN-DT-X S-80731AH S-80731AH-BV-X S-80731AN S-80731AN-DV-X S-80740AL S-80740AL-A4-X S-80740SL-A4-X S-80740AH S-80740AH-B4-X S-80740AN S-80740AN-D4-X S-80740SN-D4-X S-80741AN S-80741AN-D5-X Release S-80744HL S-80744HL-U8-X voltage 4.70 max. 4.5 V±2.4% 0.225 S-80745AL S-80745AL-A9-X S-80745SL-A9-X 4.6 V±2.4% 0.23 S-80746AL S-80746AL-EA-X 4.7 V±2.4% 0.235 S-80747AL S-80747AL-EB-X S-80747AN-JB-X 4.8 V±2.4% 0.24 S-80748AL-EC-X S-80748AN S-80748AN-JC-X 4.9 V±2.4% 0.245 S-80749AL-ED-X 5.0 V±2.4% 0.25 S-80750AL-EE-X S-80750SL-EE-X S-80750AN S-80750AN-JE-X S-80750SN-JE-X 5.1 V±2.4% 0.255 S-80751SL-EF-X S-80751AN S-80751AN-JF-X S-80751SN-JF-X 5.2 V±2.4% 0.26 5.3 V±2.4% 0.265 5.5 V±2.4% 0.275 6.1 V±2.4% 0.305 6.3 V±2.4% 0.315 7.7V±2.4% 0.385 S-80751AL S-80745AH-B9-X S-80745AN S-80745AN-D9-X S-80745SN-D9-X S-80746AN-JA-X S-80749AN-JD-X S-80752AL-EG-T1 S-80752SL-EG-T1 S-80752AN-JG-T1 S-80753AN S-80755AL-EK-X S-80761SL-ER-X S-80763AN-JT-X S-80777SN-J8-X * The last digit of the model name changes depending upon the packing form when it is an SOT package product (S-807XXSX Series is packed on tape). S : Stick T : Tape (T1 and T2 types are available depending on the direction of detectors on the tape.) ** Please ask our sales person if you need another detection voltage product. Seiko Instruments Inc. 3 HIGH-PRECISION VOLTAGE DETECTOR S-807 Series Output Configurations 1. S-807 Series model numbering conventions Nch open-drain (“L” reset type) S-807 Series CMOS output (“L” reset type) CMOS output (“H” reset type) “L” is the last letter of the model number. Ex. S-80718AL “N” is the last letter of the model number. Ex. S-80732AN “H” is the last letter of the model number. Ex. S-80740AH 2. Output configurations and their implementations Implementation With different power supplies With active low reset CPUs With active high reset CPUs As power resets employing CR circuits With voltage divider resistors to vary (-VDET) Nch VDD2 V/D Nch CPU × × • Examples with one power supply VDD VDD V/D CMOS V/D Nch CPU OUT VSS Figure 3 Seiko Instruments Inc. CPU OUT VSS or 4 CMOS (“H”) × × × × × OUT VSS × • Example with two power supplies VDD1 CMOS (“L”) × HIGH-PRECISION VOLTAGE DETECTOR S-807 Series Advantage over the S-805 Series The S-807 Series, in comparison with conventional reset ICs such as the S-805 Series, offers greater detection voltage precision (twice that of conventional units) and lower current consumption (half that of conventional units). These characteristics result in the following advantages over conventional units. 1. Advantages of greater detection voltage precision 1.1 Detecting lithium battery service life The discharge characteristics of lithium batteries are shown in Figure 4. When using the S-805 Series, the service life can be detected over t1. When using the S-807 Series, it can be detected over t2. This improvement in detection precision of the S807 Series means that batteries can be used over more of their service life. S-807 V S-805 t2 t1 t Figure 4 1.2 Detecting a power voltage at two points It is usual for the CPU to detect the power voltage at two points, one to caution and the other to reset. The service life of battery may also be detected at two points, one to caution and the other to request immediate replacement. Two voltage values to be detected (No. 1 and No. 2) do not cross and the voltage can be detected correctly. V No. 2 No. 1 Must be close t Figure 5 1.3 Voltage drop when modifying detection voltage If no voltage to be detected is suitable, the voltage can be set higher in Nch open-drain output products by using a resistor divider. (Example : when detecting 6V or 9V.) When 8V is detected using the S-8054HN (a 4V±5% device), the -Vdet tolerance becomes 2×4.00×±0.05=0.8V (R1=R2). In constrast, the S80740AN (a 4V±2.4% device) can hold down the tolerance to 2×4.00×±0.024=0.384V (R1=R2). Seiko Instruments Inc. R1 S-807 XXAN/SN R2 Nch open-drain output product Figure 6 5 HIGH-PRECISION VOLTAGE DETECTOR S-807 Series 1.4 Operating margins of power and minimum operating voltage of CPU are close Set the voltage so that it will be detected between the power voltage and the minimum operating voltage of the CPU. Thus, if two voltage points to be detected are very close, the voltage between those two points must be detected correctly. The S-807 Series offers an excellent detection voltage precision, so the voltage between narrow limits can be detected correctly. V 5V Min. operating voltage of CPU Reset voltage to be detected t Figure 7 2. Others 2.1 Low current consumption The current consumption is half of that of a conventional voltage detection IC, so the battery service life can be prolonged. 2.2 Wide operating voltage range The maximum operating voltage of a conventional IC is 10 V. For the S-807 Series, the maximum detectable voltage has been increased to 15 V. Absolute Maximum Ratings Caution : Keep static electricity to a minimum. Parameter Power supply voltage Input voltage Output Nch open-drain voltage CMOS Output current Power dissipation Operating temperature Storage temperature 6 Symbol VDD-VSS VIN VOUT PD (Unless otherwise specified : Ta=25°C) Ratings 18 VSS-0.3 to VDD+0.3 IOUT TO-92, SOT-89-3 SOT-23-5 Topr Tstg Seiko Instruments Inc. Unit V VSS-0.3 to 18 VSS-0.3 to VIN+0.3 50 200 150 -30 to +80 -40 to +125 mA mW °C HIGH-PRECISION VOLTAGE DETECTOR S-807 Series Electrical Characteristics 1. S-80715AL-AC-X, S-80715AN-DC-X (Detection voltage : 1.464 to 1.536 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET 2. Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta VDD = 3.0 V Nch VDD = 1.2 V VDS = 0.5 V Pch (CMOS VDD = 4.8 V output) VDS = 0.5 V Ta=-30°C to 80°C Min. 1.464 -VDET ×0.02 1.0 0.23 (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 1.500 1.536 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.4 3.5 2 15.0 V 1 0.50 mA 3 0.36 0.62 ±0.19 4 mV/°C S-80716AL-AD-X, S-80716AN/AN-DD-X (Detection voltage : 1.561 to 1.639 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET 3. Symbol Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta VDD = 3.0 V Nch VDD = 1.2 V VDS = 0.5 V Pch (CMOS VDD = 4.8 V output) VDS = 0.5 V Ta=-30°C to 80°C Min. 1.561 -VDET ×0.02 1.0 0.23 (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 1.600 1.639 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.4 3.5 2 15.0 V 1 0.50 mA 3 0.36 0.62 ±0.20 4 mV/°C S-80717AL/AL-AE-X, S-80717AN/AN-DE-X, S-80717SN-DE-X (Detection voltage : 1.659 to 1.741 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta VDD = 3.0 V Nch VDD = 1.2 V VDS = 0.5 V Pch (CMOS VDD = 4.8 V output) VDS = 0.5 V Ta=-30°C to 80°C Min. 1.659 -VDET ×0.02 1.0 0.23 (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 1.700 1.741 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.4 3.5 2 15.0 V 1 0.50 mA 3 0.36 0.62 ±0.21 Seiko Instruments Inc. 4 mV/°C 7 HIGH-PRECISION VOLTAGE DETECTOR S-807 Series 4. S-80718AL/AL-AF-X, S-80718AN/AN-DF-X, S-80718SL-AF-X (Detection voltage : 1.756 to 1.844 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET 5. Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta VDD = 3.0 V Nch VDD = 1.2 V VDS = 0.5 V Pch (CMOS VDD = 4.8 V output) VDS = 0.5 V Ta=-30°C to 80°C Min. 1.756 -VDET ×0.02 1.0 0.23 (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 1.800 1.844 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.4 3.5 2 15.0 V 1 0.50 mA 3 0.36 0.62 ±0.23 4 mV/°C Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta VDD = 3.0 V Pch VDD = 1.2 V VDS = 0.5 V Nch VDD = 4.8 V VDS = 0.5 V Ta=-30°C to 80°C Min. 1.756 -VDET ×0.02 1.0 0.03 (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 1.800 1.844 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.4 3.5 2 15.0 V 1 0.09 mA 4 4.06 8.36 ±0.23 3 mV/°C S-80719AL/AL-AG-X, S-80719AN/AN-DG-X S-80719SL-AG-X, S-80719SN-DG-X (Detection voltage : 1.854 to 1.946 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET 8 Conditions S-80718AH-BF-T1 (Detection voltage : 1.756 to 1.844 V) Parameter 6. Symbol Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta VDD = 3.0 V Nch VDD = 1.2 V VDS = 0.5 V Pch (CMOS VDD = 4.8 V output) VDS = 0.5 V Ta=-30°C to 80°C Min. 1.854 -VDET ×0.02 1.0 0.23 (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 1.900 1.946 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.4 3.5 2 15.0 V 1 0.50 mA 3 0.36 0.62 ±0.24 Seiko Instruments Inc. 4 mV/°C HIGH-PRECISION VOLTAGE DETECTOR S-807 Series 7. S-80720AL-AH-X, S-80720AN/AN-DH-X S-80720SL-AH-X, S-80720SN-DH-X (Detection voltage : 1.952 to 2.048 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET 8. Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta VDD = 3.0 V Nch VDD = 1.2 V VDS = 0.5 V Pch (CMOS VDD = 4.8 V output) VDS = 0.5 V Ta=-30°C to 80°C Min. 1.952 -VDET ×0.02 1.0 0.23 (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 2.000 2.048 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.4 3.5 2 15.0 V 1 0.50 mA 3 0.36 0.62 ±0.25 4 mV/°C S-80721AL/AL-AJ-X, S-80721AN/AN-DJ-X S-80721SL-AJ-X, S-80721SN-DJ-X (Detection voltage : 2.049 to 2.151 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET 9. Symbol Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta VDD = 4.5 V Nch VDD = 1.2 V VDS = 0.5 V Pch (CMOS VDD = 4.8 V output) VDS = 0.5 V Ta=-30°C to 80°C Min. 2.049 -VDET ×0.02 1.0 0.23 (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 2.100 2.151 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.4 3.5 2 15.0 V 1 0.50 mA 3 0.36 0.62 ±0.26 4 mV/°C S-80722AL/AL-AK-X, S-80722AN/AN-DK-X (Detection voltage : 2.147 to 2.253 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta VDD = 4.5 V Nch VDD = 1.2 V VDS = 0.5 V Pch (CMOS VDD = 4.8 V output) VDS = 0.5 V Ta=-30°C to 80°C Min. 2.147 -VDET ×0.02 1.0 0.23 (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 2.200 2.253 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.4 3.5 2 15.0 V 1 0.50 mA 3 0.36 0.62 ±0.28 Seiko Instruments Inc. 4 mV/°C 9 HIGH-PRECISION VOLTAGE DETECTOR S-807 Series 10. S-80723AL/AL-AL-X, S-80723AN/AN-DL-X S-80723SL-AL-X, S-80723SN-DL-X (Detection voltage : 2.244 to 2.356 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta VDD = 4.5 V Nch VDD = 1.2 V VDS = 0.5 V Pch (CMOS VDD = 4.8 V output) VDS = 0.5 V Ta=-30°C to 80°C Min. 2.244 -VDET ×0.02 1.0 0.23 (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 2.300 2.356 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.4 3.5 2 15.0 V 1 0.50 mA 3 0.36 0.62 ±0.29 4 mV/°C 11. S-80724AL/AL-AM-X, S-80724AN/AN-DM-X, S-80724SN-DM-X (Detection voltage : 2.342 to 2.458 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta VDD = 4.5 V Nch VDD = 1.2 V VDS = 0.5 V Pch (CMOS VDD = 4.8 V output) VDS = 0.5 V Ta=-30°C to 80°C Min. 2.342 -VDET ×0.02 1.0 0.23 (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 2.400 2.458 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.4 3.5 2 15.0 V 1 0.50 mA 3 0.36 0.62 ±0.30 4 mV/°C 12. S-80725AL/AL-AN-X, S-80725AN/AN-DN-X S-80725SL-AN-X, S-80725SN-DN-X (Detection voltage : 2.440 to 2.560 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET 10 Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta VDD = 4.5 V Nch VDD = 1.2 V VDS = 0.5 V Pch (CMOS VDD = 4.8 V output) VDS = 0.5 V Ta=-30°C to 80°C Min. 2.440 -VDET ×0.02 1.0 0.23 (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 2.500 2.560 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.4 3.5 2 15.0 V 1 0.50 mA 3 0.36 0.62 ±0.31 Seiko Instruments Inc. 4 mV/°C HIGH-PRECISION VOLTAGE DETECTOR S-807 Series 13. S-80725AH-BN-X (Detection voltage : 2.440 to 2.560 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta VDD = 4.5 V Pch VDD = 1.2 V VDS = 0.5 V Nch VDD = 4.8 V VDS = 0.5 V Ta=-30°C to 80°C Min. 2.440 -VDET ×0.02 1.0 0.03 (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 2.500 2.560 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.4 3.5 2 15.0 V 1 0.09 mA 4 4.06 8.36 ±0.31 3 mV/°C 14. S-80726AL-AP-X, S-80726AN/AN-DP-X (Detection voltage : 2.537 to 2.663 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta VDD = 4.5 V Nch VDD = 1.2 V VDS = 0.5 V Pch (CMOS VDD = 4.8 V output) VDS = 0.5 V Ta=-30°C to 80°C Min. 2.537 -VDET ×0.02 1.0 0.23 (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 2.600 2.663 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.0 3.0 2 15.0 V 1 0.50 mA 3 0.36 0.62 ±0.33 4 mV/°C 15. S-80727AL/AL-AQ-X, S-80727AN/AN-DQ-X S-80727SL-AQ-X, S-80727SN-DQ-X (Detection voltage : 2.635 to 2.765 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta VDD = 4.5 V Nch VDS = 0.5 V VDD = 1.2 V VDD = 2.4 V Pch (CMOS VDD = 4.8 V output) VDS = 0.5 V Ta=-30°C to 80°C Min. 2.635 -VDET ×0.02 1.0 0.23 (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 2.700 2.765 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.0 3.0 2 15.0 V 1 0.50 mA 3 1.60 0.36 3.70 0.62 ±0.34 Seiko Instruments Inc. 4 mV/°C 11 HIGH-PRECISION VOLTAGE DETECTOR S-807 Series 16. S-80728AL-AR-X, S-80728AN/AN-DR-X S-80728SL-AR-X, S-80728SN-DR-X (Detection voltage : 2.732 to 2.868 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta VDD = 4.5 V Nch VDS = 0.5 V VDD = 1.2 V VDD = 2.4 V Pch (CMOS VDD = 4.8 V output) VDS = 0.5 V Ta=-30°C to 80°C Min. 2.732 -VDET ×0.02 1.0 0.23 (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 2.800 2.868 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.0 3.0 2 15.0 V 1 0.50 mA 3 1.60 0.36 3.70 0.62 ±0.35 4 mV/°C 17. S-80729AL/AL-AS-X, S-80729AN-DS-X (Detection voltage : 2.830 to 2.970 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta VDD = 4.5 V Nch VDS = 0.5 V VDD = 1.2 V VDD = 2.4 V Pch (CMOS VDD = 4.8 V output) VDS = 0.5 V Ta=-30°C to 80°C Min. 2.830 -VDET ×0.02 1.0 0.23 (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 2.900 2.970 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.0 3.0 2 15.0 V 1 0.50 mA 3 1.60 0.36 3.70 0.62 ±0.36 4 mV/°C 18. S-80730AL/AL-AT-X, S-80730AN/AN-DT-X S-80730SL-AT-X, S-80730SN-DT-X (Detection voltage : 2.928 to 3.072 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET 12 Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta VDD = 4.5 V Nch VDS = 0.5 V VDD = 1.2 V VDD = 2.4 V Pch (CMOS VDD = 4.8 V output) VDS = 0.5 V Ta=-30°C to 80°C Min. 2.928 -VDET ×0.02 1.0 0.23 (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 3.000 3.072 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.0 3.0 2 15.0 V 1 0.50 mA 3 1.60 0.36 3.70 0.62 ±0.38 Seiko Instruments Inc. 4 mV/°C HIGH-PRECISION VOLTAGE DETECTOR S-807 Series 19. S-80731AL/AL-AV-X, S-80731AN/AN-DV-X (Detection voltage : 3.025 to 3.175 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta VDD = 4.5 V Nch VDS = 0.5 V VDD = 1.2 V VDD = 2.4 V Pch (CMOS VDD = 4.8 V output) VDS = 0.5 V Ta=-30°C to 80°C (Unless otherwise specified : Ta=25°C) Test Max. Unit circuit 3.175 V 1 -VDET V 1 ×0.08 µA 3.0 2 15.0 V 1 mA 3 Min. Typ. 3.025 -VDET ×0.02 1.0 0.23 3.100 -VDET ×0.05 1.0 0.50 1.60 0.36 3.70 0.62 ±0.39 Min. Typ. 3.025 -VDET ×0.02 1.0 0.03 3.100 -VDET ×0.05 1.0 0.09 0.15 4.06 0.30 8.36 ±0.39 4 mV/°C 20. S-80731AH/AH-BV-X (Detection voltage : 3.025 to 3.175 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta VDD = 4.5 V Pch VDS = 0.5 V VDD = 1.2 V VDD = 2.4 V Nch VDD = 4.8 V VDS = 0.5 V Ta=-30°C to 80°C (Unless otherwise specified : Ta=25°C) Test Max. Unit circuit 3.175 V 1 -VDET V 1 ×0.08 µA 3.0 2 15.0 V 1 mA 4 3 mV/°C 21. S-80732AL/AL-AW-X, S-80732AN/AN-DW-X, S-80732SL-AW-X (Detection voltage : 3.123 to 3.277 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta VDD = 4.5 V Nch VDS = 0.5 V VDD = 1.2 V VDD = 2.4 V Pch (CMOS VDD = 4.8 V output) VDS = 0.5 V Ta=-30°C to 80°C Min. 3.123 -VDET ×0.02 1.0 0.23 (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 3.200 3.277 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.0 3.0 2 15.0 V 1 0.50 mA 3 1.60 0.36 3.70 0.62 ±0.40 Seiko Instruments Inc. 4 mV/°C 13 HIGH-PRECISION VOLTAGE DETECTOR S-807 Series 22. S-80733AL/AL-AX-X, S-80733AN/AN-DX-X S-80733SL-AX-X, S-80733SN-DX-X (Detection voltage : 3.220 to 3.380 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta VDD = 4.5 V Nch VDS = 0.5 V VDD = 1.2 V VDD = 2.4 V Pch (CMOS VDD = 4.8 V output) VDS = 0.5 V Ta=-30°C to 80°C Min. 3.220 -VDET ×0.02 1.0 0.23 (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 3.300 3.380 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.0 3.0 2 15.0 V 1 0.50 mA 3 1.60 0.36 3.70 0.62 ±0.41 4 mV/°C 23. S-80733AH (Detection voltage : 3.220 to 3.380 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta VDD = 4.5 V Pch VDS = 0.5 V VDD = 1.2 V VDD = 2.4 V Nch VDD = 4.8 V VDS = 0.5 V Ta=-30°C to 80°C Min. 3.220 -VDET ×0.02 1.0 0.03 (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 3.300 3.380 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.0 3.0 2 15.0 V 1 0.09 mA 4 0.15 4.06 0.30 8.36 ±0.41 3 mV/°C 24. S-80734AL/AL-AY-X, S-80734AN/AN-DY-X (Detection voltage : 3.318 to 3.482 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET 14 Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta VDD = 4.5 V Nch VDS = 0.5 V VDD = 1.2 V VDD = 2.4 V Pch (CMOS VDD = 4.8 V output) VDS = 0.5 V Ta=-30°C to 80°C Min. 3.318 -VDET ×0.02 1.0 0.23 (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 3.400 3.482 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.0 3.0 2 15.0 V 1 0.50 mA 3 1.60 0.36 3.70 0.62 ±0.43 Seiko Instruments Inc. 4 mV/°C HIGH-PRECISION VOLTAGE DETECTOR S-807 Series 25. S-80735AL/AL-AZ-X, S-80735AN/AN-DZ-X S-80735SL-AZ-X, S-80735SN-DZ-X (Detection voltage : 3.416 to 3.584 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta VDD = 4.5 V Nch VDS = 0.5 V VDD = 1.2 V VDD = 2.4 V Pch (CMOS VDD = 4.8 V output) VDS = 0.5 V Ta=-30°C to 80°C Min. 3.416 -VDET ×0.02 1.0 0.23 (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 3.500 3.584 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.0 3.0 2 15.0 V 1 0.50 mA 3 1.60 0.36 3.70 0.62 ±0.44 4 mV/°C 26. S-80736AL-A0-X, S-80736AN/AN-D0-X (Detection voltage : 3.513 to 3.687 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta VDD = 4.5 V Nch VDS = 0.5 V VDD = 1.2 V VDD = 2.4 V Pch (CMOS VDD = 4.8 V output) VDS = 0.5 V Ta=-30°C to 80°C Min. 3.513 -VDET ×0.02 1.0 0.23 (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 3.600 3.687 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.0 3.0 2 15.0 V 1 0.50 mA 3 1.60 0.36 3.70 0.62 ±0.45 4 mV/°C 27. S-80737AL/AL-A1-X, S-80737AN/AN-D1-X (Detection voltage : 3.611 to 3.789 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta VDD = 6.0 V Nch VDS = 0.5 V VDD = 1.2 V VDD = 2.4 V Pch (CMOS VDD = 4.8 V output) VDS = 0.5 V Ta=-30°C to 80°C Min. 3.611 -VDET ×0.02 1.0 0.23 (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 3.700 3.789 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.0 3.0 2 15.0 V 1 0.50 mA 3 1.60 0.36 3.70 0.62 ±0.46 Seiko Instruments Inc. 4 mV/°C 15 HIGH-PRECISION VOLTAGE DETECTOR S-807 Series 28. S-80738AL/AL-A2-X, S-80738AN/AN-D2-X (Detection voltage : 3.708 to 3.892 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta VDD = 6.0 V Nch VDS = 0.5 V VDD = 1.2 V VDD = 2.4 V Pch (CMOS VDD = 4.8 V output) VDS = 0.5 V Ta=-30°C to 80°C Min. 3.708 -VDET ×0.02 1.0 0.23 (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 3.800 3.892 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.0 3.0 2 15.0 V 1 0.50 mA 3 1.60 0.36 3.70 0.62 ±0.48 4 mV/°C 29. S-80739AL/AL-A3-X, S-80739AN/AN-D3-X (Detection voltage : 3.806 to 3.994 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta VDD = 6.0 V Nch VDS = 0.5 V VDD = 1.2 V VDD = 2.4 V Pch (CMOS VDD = 4.8 V output) VDS = 0.5 V Ta=-30°C to 80°C Min. 3.806 -VDET ×0.02 1.0 0.23 (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 3.900 3.994 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.0 3.0 2 15.0 V 1 0.50 mA 3 1.60 0.36 3.70 0.62 ±0.49 4 mV/°C 30. S-80740AL/AL-A4-X, S-80740AN/AN-D4-X S-80740SL-A4-X, S-80740SN-D4-X (Detection voltage : 3.904 to 4.096 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET 16 Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta Min. (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 4.00 4.096 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.0 3.0 2 15.0 V 1 0.50 mA 3 VDD = 1.2 V 3.904 -VDET ×0.02 1.0 0.23 VDD = 2.4 V VDD = 3.6 V (CMOS VDD = 6.0 V 1.60 3.18 0.46 3.70 7.00 0.75 ±0.5 VDD = 6.0 V Nch VDS = 0.5 V Pch output) VDS = 0.5 V Ta=-30°C to 80°C Seiko Instruments Inc. 4 mV/°C HIGH-PRECISION VOLTAGE DETECTOR S-807 Series 31. S-80740AH/AH-B4-X (Detection voltage : 3.904 to 4.096 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta VDD = 6.0 V Pch VDS = 0.5 V VDD = 1.2 V VDD = 2.4 V Nch VDD = 6.0 V VDS = 0.5 V Ta=-30°C to 80°C Min. 3.904 -VDET ×0.02 1.0 0.03 (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 4.000 4.096 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.0 3.0 2 15.0 V 1 0.09 mA 4 0.15 4.73 0.30 9.60 ±0.5 3 mV/°C 32. S-80741AL/AL-A5-X, S-80741AN/AN-D5-X (Detection voltage : 4.001 to 4.199 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta Min. (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 4.100 4.199 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.0 3.0 2 15.0 V 1 0.50 mA 3 VDD = 1.2 V 4.001 -VDET ×0.02 1.0 0.23 VDD = 2.4 V VDD = 3.6 V (CMOS VDD = 6.0 V 1.60 3.18 0.46 3.70 7.00 0.75 ±0.51 VDD = 6.0 V Nch VDS = 0.5 V Pch output) VDS = 0.5 V Ta=-30°C to 80°C 4 mV/°C 33. S-80742AL/AL-A6-X, S-80742AN/AN-D6-X S-80742SL-A6-X, S-80742SN-D6-X (Detection voltage : 4.099 to 4.301 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Symbol Conditions -VDET VHYS ISS VDD IOUT VDD = 6.0 V Nch VDS = 0.5 V VDD = 1.2 V VDD = 2.4 V VDD = 3.6 V (CMOS VDD = 6.0 V Temperature characteristic of VDET ∆-VDET ∆Ta Pch output) VDS = 0.5 V Ta=-30°C to 80°C (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 4.099 4.200 4.301 V 1 -VDET -VDET -VDET V 1 ×0.02 ×0.05 ×0.08 µA 1.0 3.0 2 1.0 15.0 V 1 0.23 0.50 mA 3 Min. 1.60 3.18 0.46 3.70 7.00 0.75 ±0.53 Seiko Instruments Inc. 4 mV/°C 17 HIGH-PRECISION VOLTAGE DETECTOR S-807 Series 34. S-80743AL/AL-A7-X, S-80743AN/AN-D7-X (Detection voltage : 4.196 to 4.404 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta Min. (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 4.300 4.404 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.0 3.0 2 15.0 V 1 0.50 mA 3 VDD = 1.2 V 4.196 -VDET ×0.02 1.0 0.23 VDD = 2.4 V VDD = 3.6 V (CMOS VDD = 6.0 V 1.60 3.18 0.46 3.70 7.00 0.75 ±0.54 VDD = 6.0 V Nch VDS = 0.5 V Pch output) VDS = 0.5 V Ta=-30°C to 80°C 4 mV/°C 35. S-80744AL/AL-A8-X, S-80744AN/AN-D8-X, S-80744SN-D8-X (Detection voltage : 4.294 to 4.506 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta Min. (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 4.400 4.506 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.0 3.0 2 15.0 V 1 0.50 mA 3 VDD = 1.2 V 4.294 -VDET ×0.02 1.0 0.23 VDD = 2.4 V VDD = 3.6 V (CMOS VDD = 6.0 V 1.60 3.18 0.46 3.70 7.00 0.75 ±0.55 VDD = 6.0 V Nch VDS = 0.5 V Pch output) VDS = 0.5 V Ta=-30°C to 80°C 4 mV/°C 36. S-80744HL/HL-U8-X (Detection voltage : 4.295 to 4.605 V) VDD = 2.4 V 1.60 3.70 Pch VDD = 4.8 V VDS = 0.5 V Ta=-30°C to 80°C 0.36 0.62 ±0.56 Symbol Conditions Detection voltage Release voltage Current consumption Operating voltage Output current -VDET +VDET ISS VDD IOUT VDD = 6.0 V Temperature characteristic of VDET 18 VDD = 1.2 V (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 4.295 4.450 4.605 V 1 4.70 V 1 µA 2.6 6.0 2 1.0 15.0 V 1 0.23 0.50 mA 3 Parameter ∆-VDET ∆Ta Nch VDS = 0.5 V Min. Seiko Instruments Inc. 4 mV/°C HIGH-PRECISION VOLTAGE DETECTOR S-807 Series 37. S-80745AL/AL-A9-X, S-80745AN/AN-D9-X S-80745SL-A9-X, S-80745SN-D9-X (Detection voltage : 4.392 to 4.608 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta Min. (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 4.50 4.608 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.0 3.0 2 15.0 V 1 0.50 mA 3 VDD = 1.2 V 4.392 -VDET ×0.02 1.0 0.23 VDD = 2.4 V VDD = 3.6 V (CMOS VDD = 6.0 V 1.60 3.18 0.46 3.70 7.00 0.75 ±0.56 VDD = 6.0 V Nch VDS = 0.5 V Pch output) VDS = 0.5 V Ta=-30°C to 80°C 4 mV/°C 38. S-80745AH-B9-X (Detection voltage : 4.392 to 4.608 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta VDD = 6.0 V Pch VDS = 0.5 V VDD = 1.2 V VDD = 2.4 V Nch VDD = 6.0 V VDS = 0.5 V Ta=-30°C to 80°C Min. 4.392 -VDET ×0.02 1.0 0.03 (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 4.500 4.608 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.0 3.0 2 15.0 V 1 0.09 mA 4 0.15 4.73 0.30 9.60 ±0.56 3 mV/°C 39. S-80746AL/AL-EA-X, S-80746AN-JA-X (Detection voltage : 4.489 to 4.711 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta Min. (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 4.600 4.711 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.0 3.0 2 15.0 V 1 0.50 mA 3 VDD = 1.2 V 4.489 -VDET ×0.02 1.0 0.23 VDD = 2.4 V VDD = 3.6 V (CMOS VDD = 6.0 V 1.60 3.18 0.46 3.70 7.00 0.75 ±0.58 VDD = 6.0 V Nch VDS = 0.5 V Pch output) VDS = 0.5 V Ta=-30°C to 80°C Seiko Instruments Inc. 4 mV/°C 19 HIGH-PRECISION VOLTAGE DETECTOR S-807 Series 40. S-80747AL/AL-EB-X, S-80747AN-JB-X (Detection voltage : 4.587 to 4.813 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta Min. (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 4.700 4.813 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.0 3.0 2 15.0 V 1 0.50 mA 3 VDD = 1.2 V 4.587 -VDET ×0.02 1.0 0.23 VDD = 2.4 V VDD = 3.6 V (CMOS VDD = 6.0 V 1.60 3.18 0.46 3.70 7.00 0.75 ±0.59 VDD = 6.0 V Nch VDS = 0.5 V Pch output) VDS = 0.5 V Ta=-30°C to 80°C 4 mV/°C 41. S-80748AL-EC-X, S-80748AN/AN-JC-X (Detection voltage : 4.684 to 4.916 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta Min. (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 4.800 4.916 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.0 3.0 2 15.0 V 1 0.50 mA 3 VDD = 1.2 V 4.684 -VDET ×0.02 1.0 0.23 VDD = 2.4 V VDD = 3.6 V (CMOS VDD = 6.0 V 1.60 3.18 0.46 3.70 7.00 0.75 ±0.60 VDD = 6.0 V Nch VDS = 0.5 V Pch output) VDS = 0.5 V Ta=-30°C to 80°C 4 mV/°C 42. S-80749AL-ED-X, S-80749AN-JD-X (Detection voltage : 4.782 to 5.018 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET 20 Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta Min. (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 4.900 5.018 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.0 3.0 2 15.0 V 1 0.50 mA 3 VDD = 1.2 V 4.782 -VDET ×0.02 1.0 0.23 VDD = 2.4 V VDD = 3.6 V (CMOS VDD = 6.0 V 1.60 3.18 0.46 3.70 7.00 0.75 ±0.61 VDD = 6.0 V Nch VDS = 0.5 V Pch output) VDS = 0.5 V Ta=-30°C to 80°C Seiko Instruments Inc. 4 mV/°C HIGH-PRECISION VOLTAGE DETECTOR S-807 Series 43. S-80750AL-EE-X, S-80750AN/AN-JE-X S-80750SL-EE-X, S-80750SN-JE-X (Detection voltage : 4.880 to 5.120 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta Min. (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 5.000 5.120 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.0 3.0 2 15.0 V 1 0.50 mA 3 VDD = 1.2 V 4.880 -VDET ×0.02 1.0 0.23 VDD = 2.4 V VDD = 3.6 V (CMOS VDD = 6.0 V 1.60 3.18 0.46 3.70 7.00 0.75 ±0.63 VDD = 6.0 V Nch VDS = 0.5 V Pch output) VDS = 0.5 V Ta=-30°C to 80°C 4 mV/°C 44. S-80751AL, S-80751AN/AN-JF-X S-80751SL-EF-X, S-80751SN-JF-X (Detection voltage : 4.977 to 5.223 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta Min. (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 5.100 5.223 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.0 3.0 2 15.0 V 1 0.50 mA 3 VDD = 1.2 V 4.977 -VDET ×0.02 1.0 0.23 VDD = 2.4 V VDD = 3.6 V (CMOS VDD = 6.0 V 1.60 3.18 0.46 3.70 7.00 0.75 ±0.64 VDD = 6.0 V Nch VDS = 0.5 V Pch output) VDS = 0.5 V Ta=-30°C to 80°C 4 mV/°C 45. S-80752AL-EG-T1, S-80752AN-JE-T1, S-80752SL-EG-T1 (Detection voltage : 5.075 to 5.325 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta Min. (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 5.200 5.325 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.0 3.0 2 15.0 V 1 0.50 mA 3 VDD = 1.2 V 5.075 -VDET ×0.02 1.0 0.23 VDD = 2.4 V VDD = 3.6 V (CMOS VDD = 6.0 V 1.60 3.18 0.46 3.70 7.00 0.75 ±0.65 VDD = 6.0 V Nch VDS = 0.5 V Pch output) VDS = 0.5 V Ta=-30°C to 80°C Seiko Instruments Inc. 4 mV/°C 21 HIGH-PRECISION VOLTAGE DETECTOR S-807 Series 46. S-80753AN (Detection voltage : 5.172 to 5.428 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta Min. (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 5.300 5.428 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.0 3.0 2 15.0 V 1 0.50 mA 3 VDD = 1.2 V 5.172 -VDET ×0.02 1.0 0.23 VDD = 2.4 V VDD = 3.6 V (CMOS VDD = 6.0 V 1.60 3.18 0.46 3.70 7.00 0.75 ±0.66 VDD = 6.0 V Nch VDS = 0.5 V Pch output) VDS = 0.5 V Ta=-30°C to 80°C 4 mV/°C 47. S-80755AL-EK-X (Detection voltage : 5.368 to 5.632 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta Min. (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 5.500 5.632 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.0 3.0 2 15.0 V 1 0.50 mA 3 VDD = 1.2 V 5.368 -VDET ×0.02 1.0 0.23 VDD = 2.4 V VDD = 3.6 V (CMOS VDD = 6.0 V 1.60 3.18 0.46 3.70 7.00 0.75 ±0.69 VDD = 6.0 V Nch VDS = 0.5 V Pch output) VDS = 0.5 V Ta=-30°C to 80°C 4 mV/°C 48. S-80761SL-ER-X (Detection voltage : 5.953 to 6.247 V) Parameter Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET 22 Symbol Conditions -VDET VHYS ISS VDD IOUT ∆-VDET ∆Ta Min. (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 6.100 6.247 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.9 3.6 2 15.0 V 1 0.50 mA 3 VDD = 1.2 V 5.953 -VDET ×0.02 1.0 0.23 VDD = 2.4 V VDD = 3.6 V VDD = 4.8 V (CMOS VDD = 8.4 V 1.60 3.18 4.13 0.59 3.70 7.00 8.56 0.96 ±0.78 VDD = 7.5 V Nch VDS = 0.5 V Pch output) VDS = 0.5 V Ta=-30°C to 80°C Seiko Instruments Inc. 4 mV/°C HIGH-PRECISION VOLTAGE DETECTOR S-807 Series 49. S-80763AN-JT-X (Detection voltage : 6.148 to 6.452 V) Parameter Symbol Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET Conditions Min. -VDET VHYS ISS VDD IOUT VDD = 1.2 V 6.148 -VDET ×0.02 1.0 0.23 VDD = 2.4 V VDD = 3.6 V VDD = 4.8 V (CMOS VDD = 8.4 V 1.60 3.18 4.13 0.59 3.70 7.00 8.56 0.96 ±0.81 VDD = 7.5 V Nch VDS = 0.5 V ∆-VDET ∆Ta (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 6.300 6.452 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 1.9 3.6 2 15.0 V 1 0.50 mA 3 Pch output) VDS = 0.5 V Ta=-30°C to 80°C 4 mV/°C 50. S-80777SN-J8-X (Detection voltage : 7.515 to 7.885 V) Parameter Symbol Detection voltage Hysteresis width Current consumption Operating voltage Output current Temperature characteristic of VDET Conditions Min. -VDET VHYS ISS VDD IOUT VDD = 1.2 V 7.515 -VDET ×0.02 1.0 0.23 VDD = 2.4 V VDD = 3.6 V VDD = 4.8 V VDD = 6.0 V (CMOS VDD = 9.6 V 1.60 3.18 4.13 4.73 0.65 3.70 7.00 8.56 9.60 1.05 ±0.99 VDD = 9.0 V Nch VDS = 0.5 V ∆-VDET ∆Ta (Unless otherwise specified : Ta=25°C) Test Typ. Max. Unit circuit 7.700 7.885 V 1 -VDET -VDET V 1 ×0.05 ×0.08 µA 2.2 4.0 2 15.0 V 1 0.50 mA 3 Pch output) VDS = 0.5 V Ta=-30°C to 80°C 4 mV/°C Test Circuits (2) (1) A VDD R(100 kΩ)* S-807 VDD V S-807 VDD OUT OUT Series CRT Series VDD VSS VSS * R is unnecessary for CMOS output products. (4) (3) VDD VDD V S-807 VDD V OUT A Series VSS S-807 VDD V Series VDS A OUT VSS V VDS Figure 8 Seiko Instruments Inc. 23 HIGH-PRECISION VOLTAGE DETECTOR S-807 Series Technical Terms 1. Detection voltage (-VDET) Detection voltage -VDET is the voltage at which the detector’s output goes active. In products with “Nch open-drain” and “CMOS active low output” configurations the output goes low on detection. It goes high in products with CMOS active high output configurations. This detection voltage varies slightly among products of the same type. The variation of voltages between the specified minimum [(-VDET)min.] and maximum [(-VDET)max.] values is called the detection voltage range. (See Figure 9.) Example : For the S-80745AN, detection voltage lies in the range 4.392≤(-VDET)≤4.608. 2. Release voltage (+VDET) Release voltage +VDET is the voltage at which a unit’s output returns (is “released”) to its inactive state (high for Nch and CMOS active low output configurations, and low for CMOS active high output configurations). The value of this voltage for any single unit lies in a range determined from the value of that unit’s detection voltage (see Figure 10): (-VDET)×1.02≤(+VDET)≤(-VDET)×1.08. Example : For an S-80745AN with -VDET=4.608, release voltage lies in the range 4.700≤(+VDET)≤4.997. For an S-80745AN with -VDET=4.392, release voltage lies in the range 4.480≤(+VDET)≤4.743. When calculating the overall release voltage range for S-807 Series products, care must be taken to consider the variation in the series’ detection voltage values. The minimum and maximum values for release voltage [(+V DET)min. and (+VDET)max.)] must be determined using (-VDET)min. and (-VDET)max.: (+VDET)min.=[(-VDET)min.]×1.02; (+VDET)max.=[(-VDET)max.]×1.08. Example : For S-80745AN voltage detectors, release voltage lies in the range 4.480≤(+VDET)≤4.977. Note : Detection voltage(-VDET) and Release voltage(+VDET) range equally from 4.480V to 4.608V, however, (+VDET) > (-VDET). VDD Release voltage VDD Detection voltage (+VDET)max. (-VDET)max. Detection voltage range (-VDET)min. Release voltage range (+VDET)min. OUT OUT Figure 9 Figure 10 3. Hysteresis width (VHYS) Hysteresis width is the voltage difference between a device’s detection voltage and its release voltage (see Figure 14. VHYS=B-A). By giving a device hysteresis, erroneous toggling of the output due to noise at the input is avoided. 4. Through-type current Through-type current refers to the instantaneous current flow which occurs at the moment a voltage detector output toggles. This current is quite large in devices with CMOS configured outputs, and also occurs to some extent in Nch open-drain configured devices. S-807 Series voltage detectors are specially designed to limit through-type currents and are superior to S-805 Series devices in this respect. (See current consumption characteristics.) 24 Seiko Instruments Inc. HIGH-PRECISION VOLTAGE DETECTOR S-807 Series 5. Oscillation In applications where a resistor is connected to the voltage detector input (Figure 11 and 12), the through-type current generated when the output goes from low to high (release) causes a voltage drop equal to [through-type current]×[input resistance] across the resistor. When the input voltage resultantly drops below the detection voltage -VDET, the output voltage returns to its low level. In this state, the through-type current -- and its resultant voltage drop -- have disappeared, and the output goes back from low to high. Again, a through-type current is generated, a voltage drop appears, and the process repeats. Oscillation refers to this unstable condition. • Mis-implementation with input voltage • Power reset mis-implementation divider VDD VDD RA Di R VIN S807XXAL /SL (CMOS output) VIN OUT C (CMOS output) S807XXAL OUT /SL RB VSS VSS Figure 12 Figure 11 Seiko Instruments Inc. 25 HIGH-PRECISION VOLTAGE DETECTOR S-807 Series Operation 1. Basic operation (1) When power supply voltage VDD is greater than the release voltage +VDET, the Nch transistor is OFF and the Pch transistor ON, causing VDD (high) to appear at the output. With the Nch transistor of Figure 13 (a) off, the comparator input voltage is (RB+RC)/(RA+RB+RC)×VDD. (2) When power supply voltage VDD goes below +VDET, the output continues to maintain the power supply voltage level, as long as VDD remains above the detection voltage -VDET. When VDD does fall below -VDET (A in Figure 14), the Nch transistor goes ON, the Pch transistor goes OFF, and VSS appears at the output. With the Nch transistor of Figure 13 (a) ON, the comparator input voltage is RB/(RA+RB)×VDD. (3) When VDD falls below the minimum operating voltage, the output becomes undefined. However, output will revert to VDD if a pull-up has been employed. (4) VSS will again be output when VDD rises above the minimum operating voltage. VSS will continue to be output even when VDD surpasses -VDET, as long as it does not exceed the release voltage +VDET. (5) When VDD rises above +VDET (B in Figure 14), the Nch transistor goes OFF, the Pch transistor goes ON, and VDD appears at the output. VDD (1) * (2) (3) (4) (5) VDD B - Pch RA + OUT Hysteresis width (VHYS) A Detection voltage(-VDET) Minimum operating voltage VSS Comparator output RB Nch VREF Release voltage(+VDET) VDD (a) OUT RC VSS VSS * Parasitic diode Figure 13 26 Figure 14 Seiko Instruments Inc. HIGH-PRECISION VOLTAGE DETECTOR S-807 Series 2. Reference voltage circuit The S-807 Series has 0.8 V typical reference voltage circuit asVREF (a high-stable reference voltage source) . It features: • Low power consumption • Good temperature characteristic VDD 3. Comparator The comparator drives a differential amplifier with a current consumption of only 0.5µA as shown in Figure 15. It features: • Good matching characteristics • Wide operating voltage range • Low offset voltage VOUT VIN + VIN- Bias VSS Figure 15 Comparator 4. Other characteristics (1) Temperature characteristic of detection voltage Because of the excellent temperature characteristic of the reference voltage circuit, the temperature characteristics of the detection voltage are expressed by the following formula in the range of -30°C to +80°C. -VDET -VREF × (±0.1) mV/°C typ. *-VREF is 0.65 V min., 0.8 V typ., 0.95 V max. (2) Temperature characteristic of release voltage -VDET+VHYS -VREF × (±0.1) mV/°C Seiko Instruments Inc. 27 HIGH-PRECISION VOLTAGE DETECTOR S-807 Series Dimensions (1) TO-92 (2) SOT-89-3 5.2 max. 4.2 max. 4.5±0.2 1.5±0.2 1.6±0.2 5.0±0.2 Mark side +0.25 2.5±0.2 4.0 -0.35 2.3 max. 0.6 max. 0.8 min. 0.8 max. 0.4±0.1 0.45±0.1 1.5±0.1 12.7 min. 0.45±0.1 0.45±0.1 0.4±0.1 1.5±0.1 1.5±0.1 (0.4) 1.27±0.05 1.27±0.05 2.5 45° 1.5 max. (0.2) (0.4) (3) SOT-23-5 2.9 (3.1 max.) 0.45 +0.2 1.6 2.8-0.3 +0.1 0.16-0.06 0.4±0.1 1.1±0.1 1.3 max. 0 min. 0.95±0.1 0.95±0.1 1.9±0.2 Unit : mm Figure 16 Dimensions 28 Seiko Instruments Inc. 0.4±0.05 HIGH-PRECISION VOLTAGE DETECTOR S-807 Series Taping 1. SOT-89-3 1.1 Tape specifications T1 and T2 types are available depending upon the direction of ICs on the tape. (1) White label (without a hole in the center of embossed area) 4.0±0.1(10 pitches : 40.0±0.2) +0.1 φ1.5 -0 2.0±0.05 3°max. 8.0±0.1 5°max. 0.3±0.05 2.0±0.1 4.75±0.1 (2) Blue label (with a hole in the center of embossed area) 4.0±0.1(10 pitches : 40.0±0.2) +0.1 φ1.5 -0 2.0±0.05 +0.1 φ1.5 -0 3°max. 8.0±0.1 5°max. 0.3±0.05 2.0±0.1 4.75±0.1 Unit : mm T1 T2 Feed direction Feed direction Figure 17 Seiko Instruments Inc. 29 HIGH-PRECISION VOLTAGE DETECTOR S-807 Series 1.2 Reel specifications 1 reel holds 1000 detectors. 16.5 Max. Most outer dimension. 2±0.2 10.5±0.4 (1.5) φ13±0.2 φ60 +10 (60°) (60°) 13.0±0.3 0 φ180 + −3 Inner dimension of reel core. 15.4±1.0 Outer dimension of reel core. Unit : mm Figure 18 2. SOT-23-5 2.1 Tape specifications T1 and T2 types are available depending upon the direction of ICs on the tape. The top cover tape comes in two tones; opaque, transparent and transparent. +0.1 +0.2 φ1.5 -0 φ1.0 -0 2.0±0.05 4.0±0.1(10 pitches : 40.0±0.2) 1.75±0.1 3.5±0.05 8.0±0.2 3°max. 4.0±0.1 3°max. 0.27±0.05 1.4±0.1 T1 3.2±0.1 T2 →Feed direction →Feed direction Figure 19 30 Seiko Instruments Inc. Unit : mm HIGH-PRECISION VOLTAGE DETECTOR S-807 Series 2.2. Reel specifications 1 reel holds 3000 detectors. 12.5 Max. Most outer dimension. 2±0.2 10.5±0.4 (1.5) φ13±0.2 φ60 +10 (60°) (60°) 9.0±0.3 0 φ180 + −3 Inner dimension of reel core. 11.4±1.0 Outer dimension of reel core. Unit : mm Figure 20 Magazine Dimensions 1 stick holds 25 detectors. 5±0.1 178.2±0.1 34.8 35 35 35 38.4 Part B Counting mark (every five units) Part A 3.35±0.07 3.5±0.07 3.5±0.07 0.5 3.5±0.07 3.5±0.07 3.35±0.07 0.5 1.45±0.1 2.8 2.8 2.5 3.25±0.1 4.1±0.07 1.9 10.0±0.1 1.6 2.7±0.07 0.5 0.5 2.6±0.1 2.8 3.15 3.85±0.07 2.8 1.45±0.1 “Part A”magnified “Part B”magnified Unit : mm Figure 21 Seiko Instruments Inc. 31 HIGH-PRECISION VOLTAGE DETECTOR S-807 Series Markings 1. TO-92 S 8 0 7 4 0 A N 9 A 1 1 1 3 2 Product name Last digit of the year Lot No. 2. SOT-89-3 (2) Blue label (1) White label Factory code 1 2 1 Product name (abbreviation) Lot No. 3. SOT-23-5 & Product name (abbreviation) & Lot No. : Alphabet : Dot on one side Figure 22 32 Seiko Instruments Inc. 2 Product name (abbreviation) Lot No. HIGH-PRECISION VOLTAGE DETECTOR S-807 Series Characteristics 1. Detection voltage (VDET) - Temperature (Ta) 1.1 S-80730AL 1.2 S-80740AH 3.2 4.2 Release voltage Release voltage VDET 4.1 (V) VDET 3.1 (V) 3.0 4.0 Detection voltage Detection voltage 2.9 3.9 -20 0 20 40 60 80 -20 0 20 40 60 80 Ta (°C) Ta (°C) 2. Current consumption (ISS) - Input voltage (VIN) 2.1 S-80730AL 2.2 S-80740AH 75.0 140 5.0 5.0 ISS 4.0 (µA) 3.0 ISS 4.0 (µA) 3.0 2.0 2.0 1.0 1.0 0 0 2.0 6.0 10.0 14.0 18.0 2.0 6.0 10.0 14.0 18.0 VIN (V) VIN (V) 3. Current consumption (ISS) - Temperature (Ta) 3.1 S-80730AL VDD=4.5 V 3.2 S-80740AH 1.6 1.6 ISS 1.2 (µA) ISS 1.2 (µA) 0.8 0.8 0.4 0.4 -20 0 20 40 60 80 Ta (°C ) -20 VDD=6.0 V 0 20 40 60 80 Ta (°C ) Seiko Instruments Inc. 33 HIGH-PRECISION VOLTAGE DETECTOR S-807 Series 4. Output transistor current (IOUT) 4.1 Nch transistor current (i) VDS-IOUT (ii) VDD-IOUT 8.0 Ta=-30°C 40 6.4 VDD=4.8 V Ta=80°C IOUT (mA) 4.8 32 IOUT 24 (mA) 16 VDD=3.6 V 3.2 1.6 VDD=2.4 V 8 VDD=1.2 V 1.0 2.0 0 VDS=0.5 V 3.0 4.0 5.0 0 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 VDD (V) VDS (V) 4.2 Pch transistor current VDS-IOUT 4.0 VDD=4.8 V 3.2 IOUT 2.4 (mA) 1.6 0.8 0 VDD=3.6 V VDD=2.4 V VDD=1.2 V 1.0 2.0 3.0 4.0 5.0 VDS (V) 5. Minimum operating voltage 5.1 CMOS active low output 5.2 CMOS active high output 4.0 5.0 3.2 4.0 VOUT 2.4 (V) 1.6 VOUT 3.0 (V) 2.0 0.8 1.0 0 0 0.8 1.6 2.4 3.2 4.0 VDD (V) 34 Ta=25°C 1.0 2.0 3.0 4.0 5.0 VDD (V) Seiko Instruments Inc. HIGH-PRECISION VOLTAGE DETECTOR S-807 Series 6. Dynamic response 6.1 Nch open-drain output products 102 RL=100 kΩ 10 1 Delay time (ms) 100 “L” → “H” 10-1 10 “H” → “L” -2 10-4 10-3 10-2 10-1 Load capacitance (µF) 6.2 CMOS active low output products 100 10-1 “H” → “L” Delay time (ms) 10-2 “L” → “H” 10-3 10-4 10-3 10-2 10-1 Load capacitance (µF) 6.3 CMOS active high output products 101 100 Delay time (ms) “L” → “H” 10-1 10-2 “H” → “L” 10 -3 10-4 10-3 10-2 10-1 Load capacitance (µF) Seiko Instruments Inc. 35 HIGH-PRECISION VOLTAGE DETECTOR S-807 Series Measuring Circuits (1) Detection voltage (2) Current consumption VDD VDD A *R(100 kΩ) VDD S-807 V VDD Oscilloscope Series S-807 V OUT OUT Series VSS VSS * R is unnecessary for CMOS output products. (3) Output transistor current (a) Nch transistor current (b) Pch transistor current VDD VDD VDD OUT S-807 V VSS S-807 VDD A Series VDS V V Series V A OUT VSS VDS (4) Min. operating voltage VDD *R (100 kΩ) S-807 (Nch output) Series VDD V OUT * R is unnecessary for CMOS output products. VSS V (5) Dynamic response (b) CMOS output products (a) Nch open-drain output products VDD VDD S-807 P.G Series OUT CRT S-807 7V Series CL P.G VSS VSS Figure 23 36 Input pulse 100 kΩ Seiko Instruments Inc. OUT CRT CL 5V 1V VSS HIGH-PRECISION VOLTAGE DETECTOR S-807 Series Application Circuit Examples 1. Reset circuits of microcomputers If the power supply voltage to a microcomputer falls below the specified level, unspecified operation may be performed or the contents of the memory register may be lost. When power supply voltage returns to normal, the microcomputer may need to be initialized before normal operations can be done. Reset circuits protect microcomputers, in the event of current being momentarily switched off or lowered. With the S-807 Series, the reset circuits shown in Figures 24 to 26 can be easily constructed. VDD1 VDD2 VDD S-807XX AL/SL S-807XX AN/SN Microcomputer Microcomputer VSS VSS (Nch open-drain output products only) Figure 24 Figure 25 VDD S-807XX AN/SN Microcomputer VSS Figure 26 Seiko Instruments Inc. 37 HIGH-PRECISION VOLTAGE DETECTOR S-807 Series 2. Power-on reset circuit The Nch open-drain output products of the S-807 Series can be used to construct a power-on reset circuit. Following is an example. VDD Di R (R≤7.5kΩ) VIN S-807XX AN/SN + OUT (Nch open-drain products) C VSS Note 1: R should be 7.5kΩ or less for purpose of protection against oscillation. Note 2: “Di” momentarily discharges the charge received via “C” at the falling edge of power off. There is no need to insert a diode, when there is no conflict with application circuit even if there is a delay in the falling edge of OUT at the falling edge of power off. OUT (V) VDD (V) t (s) t (s) Figure 27 Note 3: When there is a sharp rise in power, the output voltage may go “H” momentarily in unstable range of the output voltage (the output voltage is unstable below the minimum operating voltage) . VDD (V) OUT (V) t (s) t (s) Figure 28 38 Seiko Instruments Inc. HIGH-PRECISION VOLTAGE DETECTOR S-807 Series 3. Change of detection voltage In Nch open-drain output products of the S-807 Series, detection voltage can be changed with resistance dividers or diodes as shown in Figures 29 and 30. In Figure 29, hysteresis width is also changed. VDD VDD Vf1 RA (RA≤7.5kΩ) S807XX AN/SN VIN + RB - Vf2 OUT (Nch open-drain products) VS VIN S807XX AN/SN OUT (Nch open-drain products) VSS Detection voltage= RA+RB RB •-VDET Hysteresis width= RA+RB RB •-VHYS Note 1: The hysteresis width will be a little wider than the value of the formula above, because of the through current, if RA and RB are larger. Note 2: RA should be 7.5kΩ or less for Figure purpose of 29 protection against oscillation. Detection voltage=Vf1+Vf2+-VDET Figure 30 Figure 29 Notes • In CMOS output products of S-807 Series, high through current flows when detecting or releasing. If a high impedance is connected to the input, oscillation may be caused by the through current when lowering the voltage during releasing. • In TO-92 products, since there are projections and resin burrs on the roots of the lead terminals formed at the Tiebar-cut, do not solder to them. • When designing for mass production using an application circuit described here, take into account the deviation of components and temperature characteristics. • Seiko Instruments Inc. cannot take any responsibility for the patents on the circuits described here. Seiko Instruments Inc. 39 Collection of Product FAQs Author: Hamaguchi Masanao Date: 98/11/12 (Thursday) 10:17 (Modified: 98/12/14 (Monday) 16:42) <Information level> A: Public (Printing O.K.) Index: B: Technical <Product> Division name: 01 IC Category 1: 11 Power Supply Category 2: 1. Voltage Detectors Cal No.: S-807 Related Documents: Question: What is the method for calculating delay-time of the power-on clear circuit? Answer: The delay time (power-on clear time) produced in a power-on clear circuit using the S-807xxAN can be found by substituting constants in the following formula: Vdet + Tdelay = 1 × C × R × Ln (1 ) Vdd Tdelay: Delay time [sec] C: External capacitance value [F] R: Resistance value [Ω] V det+: S-807xxAN Series release voltage [V] Vdd: Supply voltage [V] Vdd V R Supply voltage (Vdd) Pull-up resistor S-807xxAN release voltage (Vdet+) S-807xxAN S-807 input voltage C Delay time Note: Set R to less than 7.5 kΩ to prevent oscillation. 40 <Remarks> FAQ No.: 11S807001 41