VISHAY SBLF1630CTHE3/45

SBL(F,B)1630CT & SBL(F,B)1640CT
Vishay General Semiconductor
Dual Common-Cathode Schottky Rectifier
TO-220AB
FEATURES
• Guardring for overvoltage protection
ITO-220AB
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
3
2
1
1
SBL16xxCT
PIN 1
PIN 2
PIN 3
CASE
2
3
SBLF16xxCT
PIN 1
PIN 2
PIN 3
TO-263AB
K
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
2
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters and polarity protection application.
1
SBLB16xxCT
PIN 1
K
PIN 2
HEATSINK
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
8Ax2
VRRM
30 V, 40 V
IFSM
250 A
VF
0.55 V
TJ max.
125 °C
MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
SBL1630CT
SBL1640CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
30
40
V
Working peak reverse voltage
VRWM
21
28
V
Maximum DC blocking voltage
VDC
30
40
V
Maximum average forward rectified current at TC = 95 °C
total device
per diode
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
Document Number: 88727
Revision: 07-May-08
IF(AV)
16
8.0
A
IFSM
250
A
TJ, TSTG
- 40 to + 125
°C
VAC
1500
V
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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SBL(F,B)1630CT & SBL(F,B)1640CT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage per diode (1)
SYMBOL
VALUE
UNIT
VF
0.55
V
IR
0.5
50
mA
8.0 A
Maximum instantaneous reverse current at rated DC
blocking voltage per diode (1)
TC = 25 °C
TC = 100 °C
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SBL
SBLF
SBLB
UNIT
RθJC
2.0
4.0
2.0
°C/W
Typical thermal resistance from junction to case per diode
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
1.85
45
50/tube
Tube
TO-220AB
SBL1630CT-E3/45
ITO-220AB
SBLF1630CT-E3/45
1.99
45
50/tube
Tube
TO-263AB
SBLB1630CT-E3/45
1.35
45
50/tube
Tube
TO-263AB
SBLB1630CT-E3/81
1.35
81
800/reel
Tape and reel
TO-220AB
SBL1630CTHE3/45 (1)
1.85
45
50/tube
Tube
ITO-220AB
SBLF1630CTHE3/45 (1)
1.99
45
50/tube
Tube
TO-263AB
SBLB1630CTHE3/45 (1)
1.35
45
50/tube
Tube
TO-263AB
SBLB1630CTHE3/81 (1)
1.35
81
800/reel
Tape and reel
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
300
20
Peak Forward Surge Current (A)
Average Forward Current (A)
Resistive or Inductive Load
16
12
8
4
0
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
250
200
150
100
50
0
50
0
100
150
1
10
100
Case Temperature (°C)
Number of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88727
Revision: 07-May-08
SBL(F,B)1630CT & SBL(F,B)1640CT
Vishay General Semiconductor
10 000
TJ = 125 °C
Pulse Width = 300 µs
1 % Duty Cycle
10
TJ = 25 °C
1
0.1
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
0.01
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
100
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
100
TJ = 125 °C
10
TJ = 75 °C
1
0.1
TJ = 25 °C
0.01
0.001
0
20
40
60
80
100
10
1
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
Document Number: 88727
Revision: 07-May-08
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
SBL(F,B)1630CT & SBL(F,B)1640CT
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
ITO-220AB
0.370 (9.40)
0.360 (9.14)
0.185 (4.70)
0.175 (4.44)
0.154 (3.91)
0.148 (3.74)
PIN
2
3
0.160 (4.06)
0.140 (3.56)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
2
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.350 (8.89)
0.330 (8.38)
3
7° REF.
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.560 (14.22)
0.530 (13.46)
0.035 (0.89)
0.025 (0.64)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.671 (17.04)
0.651 (16.54)
PIN
1
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.600 (15.24)
0.580 (14.73)
0.603 (15.32)
0.573 (14.55)
7° REF.
0.076 (1.93) REF.
45° REF.
0.145 (3.68)
0.135 (3.43)
0.635 (16.13)
0.625 (15.87)
0.110 (2.79)
0.100 (2.54)
0.076 (1.93) REF.
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
1
0.190 (4.83)
0.170 (4.32)
0.404 (10.26)
0.384 (9.75)
0.415 (10.54) MAX.
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) MIN.
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
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0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.33 (8.38) MIN.
0.670 (17.02)
0.591 (15.00)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88727
Revision: 07-May-08
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Document Number: 91000
Revision: 18-Jul-08
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