IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Advanced Process Technology - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration • Surface Mount (IRF9Z34S/SiHF9Z34S) Available • Low-Profile Through-Hole (IRSiHF9Z34L/SiHF9Z34L) RoHS* COMPLIANT • 175 °C Operating Temperature • Fast Switching • P-Channel Single • Fully Avalanche Rated • Lead (Pb)-free Available S DESCRIPTION I2PAK (TO-262) D2PAK (TO-263) Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. G G D S D P-Channel MOSFET The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRSiHF9Z34L/SiHF9Z34L) is available for low-profile applications. ORDERING INFORMATION Package Lead (Pb)-free SnPb D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262) IRF9Z34SPbF SiHF9Z34S-E3 IRF9Z34S SiHF9Z34S IRF9Z34STRLPbFa IRF9Z34STRRPbFa SiHF9Z34STL-E3a IRF9Z34STRLa SiHF9Z34STLa SiHF9Z34STR-E3a IRF9Z34STRRa SiHF9Z34STRa IRF9Z34LPbF SiHF9Z34L-E3 IRF9Z34L SiHF9Z34L Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS - 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at - 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currenta, e ID IDM Linear Derating Factor UNIT V - 18 - 13 A - 72 0.59 W/°C Single Pulse Avalanche Energyb, e EAS 370 mJ Avalanche Currenta IAR - 18 A EAR 8.8 mJ Repetiitive Avalanche Energya * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91093 S-Pending-Rev. A, 03-Jun-08 WORK-IN-PROGRESS www.vishay.com 1 IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL TC = 25 °C Maximum Power Dissipation LIMIT PD TA = 25 °C Peak Diode Recovery dV/dtc, e Operating Junction and Storage Temperature Range UNIT 3.7 W 88 dV/dt - 4.5 V/ns TJ, Tstg - 55 to + 175 °C 300d Soldering Recommendations (Peak Temperature) for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 25 V, starting TJ = 25 °C, L = 1.3 mH, RG = 25 Ω, IAS = - 18 A (see fig. 12). c. ISD ≤ - 18 A, dI/dt ≤ 170 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. e. Uses IRF9Z34/SiHF9Z34 data and test conditions. THERMAL RESISTANCE RATINGS SYMBOL TYP. MAX. Maximum Junction-to-Ambient (PCB Mounted, steady-state)a PARAMETER RthJA - 40 Maximum Junction-to-Case (Drain) RthJC - 1.7 UNIT °C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VDS VGS = 0 V, ID = - 250 µA - 60 - - V ΔVDS/TJ Reference to 25 °C, ID = - 1 mAc - - 0.06 - V/°C VGS(th) VDS = VGS, ID = - 250 µA - 2.0 - - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 60 V, VGS = 0 V - - - 100 VDS = - 48 V, VGS = 0 V, TJ = 150 °C - - - 500 Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs µA - - 0.14 Ω VDS = - 25 V, ID = - 11 Ac 5.9 - - S VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 5c - 1100 - - 620 - - 100 - - - 34 VGS = - 10 V ID = - 11 Ab Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs - - 9.9 Gate-Drain Charge Qgd - - 16 Turn-On Delay Time td(on) - 18 - tr - 120 - - 20 - - 58 - Rise Time Turn-Off Delay Time Fall Time www.vishay.com 2 td(off) tf VGS = - 10 V ID = - 18 A, VDS = - 48 V, see fig. 6 and 13b, c VDD = - 30 V, ID = - 18 A, RG = 12 Ω, RD = 1.5 Ω, see fig. 10b, c pF nC ns Document Number: 91093 S-Pending-Rev. A, 03-Jun-08 IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT - - - 18 S - - - 72 TJ = 25 °C, IS = - 18 A, VGS = 0 Vb - - - 6.3 - 100 200 ns - 280 520 nC Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IF = - 18 A, dI/dt = 100 A/µsb, c V Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. Uses IRF9Z34/SiHF9Z34 data and test conditions. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics Document Number: 91093 S-Pending-Rev. A, 03-Jun-08 Fig. 2 - Typical Output Characteristics www.vishay.com 3 IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 4 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91093 S-Pending-Rev. A, 03-Jun-08 IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature RD VDS VGS D.U.T. RG +VDD - 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit td(on) tr td(off) tf VGS 10 % Fig. 8 - Maximum Safe Operating Area 90 % VDS Fig. 10b - Switching Time Waveforms Document Number: 91093 S-Pending-Rev. A, 03-Jun-08 www.vishay.com 5 IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case L Vary tp to obtain required IAS IAS VDS D.U.T. RG VDS + V DD VDD IAS tp - 10 V tp 0.01 Ω VDS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current www.vishay.com 6 Document Number: 91093 S-Pending-Rev. A, 03-Jun-08 IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Current regulator Same type as D.U.T. 50 kΩ QG - 10 V 0.2 µF 12 V 0.3 µF QGS - QGD D.U.T. VG + VDS VGS - 3 mA Charge IG ID Current sampling resistors Fig. 13a - Maximum Avalanche Energy vs. Drain Current Fig. 13b - Gate Charge Test Circuit Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - RG + • dV/dt controlled by RG • ISD controlled by duty factor "D" • D.U.T. - device under test + - VDD Compliment N-Channel of D.U.T. for driver Driver gate drive P.W. Period D= P.W. Period VGS = - 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current Ripple ≤ 5 % ISD * VGS = - 5 V for logic level and - 3 V drive devices Fig. 14 - For P-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91093. Document Number: 91093 S-Pending-Rev. A, 03-Jun-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1