SD103AWS-V/103BWS-V/103CWS-V Vishay Semiconductors Small Signal Schottky Diodes Features • The SD103 series is a metal-on-silicon Schottky barrier device which is protected e3 by a PN junction guard ring • This diode is also available in the Mini-MELF case with the type designations LL103A to LL103C, DO35 case with the type designations SD103A to SD103C and SOD123 case with type designations SD103AW-V to SD103CW-V • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications • For general purpose applications • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 20145 Mechanical Data Case: SOD323 Plastic case Weight: approx. 4.3 mg Packaging Codes/Options: GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part Ordering code Type Marking Remarks SD103AWS-V SD103AWS-V-GS18 or SD103AWS-V-GS08 S6 Tape and Reel SD103BWS-V SD103BWS-V-GS18 or SD103BWS-V-GS08 S7 Tape and Reel SD103CWS-V SD103CWS-V-GS18 or SD103CWS-V-GS08 S8 Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Peak reverse voltage Part Symbol Value Unit SD103AWS-V VRRM 40 V SD103BWS-V VRRM 30 V SD103CWS-V VRRM 20 Power dissipation Single cycle surge 1) 10 µs square wave Ptot 200 IFSM 2 1) V mW A Valid provided that electrodes are kept at ambient temperature Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Thermal resistance junction to ambient air Junction temperature Storage temperature range 1) Symbol RthJA Tj Tstg Value Unit 1) K/W 500 1251) - 55 to + 1501) °C °C Valid provided that electrodes are kept at ambient temperature Document Number 85682 Rev. 1.7, 18-Sep-06 www.vishay.com 1 SD103AWS-V/103BWS-V/103CWS-V Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Part Symbol Max Unit SD103AWS-V IR 5 µA VR = 20 V SD103BWS-V IR 5 µA VR = 10 V SD103CWS-V IR 5 µA VF 370 mV 600 mV VR = 30 V Leakage current Forward voltage drop IF = 20 mA Min Typ. IF = 200 mA VF Diode capacitance VR = 0 V, f = 1 MHz CD 50 pF Reverse recovery time IF = IR = 50 mA to 200 mA, recover to 0.1 IR trr 10 ns Typical Characteristics Tamb = 25 °C unless otherwise specified 1000 1000 IR - Reverse Current (µA) I F - Forward Current (mA) Tamb = 125 °C 100 10 1 0.1 0.01 0 0.2 0.4 0.6 0.8 50 °C 1 25 °C 0.1 5 10 15 20 25 30 35 40 45 50 VR - Reverse Voltage (V) Figure 3. Typical Variation of Reverse Current at Various Temperatures 5 100 tp = 300 ms 4 C D - Diode Capacitance (pF) I F - Forward Current (A) 75 °C 10 20084 Figure 1. Typical Variation of Forward Current vs. Forward Voltage duty cycle = 2 % 3 2 1 0 0 18489 0.5 1.0 VF - Forward Voltage (V) www.vishay.com 10 1 1.5 Figure 2. Typical High Current Forward Conduction Curve 2 100 °C 0.01 0 1.0 VF - Forward Voltage (V) 18488 100 0 18491 10 20 30 40 50 VR - Reverse Voltage (V) Figure 4. Diode Capacitance vs. Reverse Voltage Document Number 85682 Rev. 1.7, 18-Sep-06 SD103AWS-V/103BWS-V/103CWS-V Vishay Semiconductors VR - Reverse Voltage (V) 50 40 100 mA 30 200 mA I F = 400 mA 20 10 0 0 100 200 Tamb - Ambient Temperature (°C) 18492 Figure 5. Blocking Voltage Deration vs. Temperature at Various Average Forward Currents 0.1 (0.004) max 0.10 (0.004) 0.15 (0.006) 0.8 (0.031) 1.15 (0.045) Package Dimensions in mm (Inches): SOD323 0.25 (0.010) min 1.95 (0.077) 1.60 (0.063) foot print recommendation: 0.6 (0.024) 0.6 (0.024) 1.6 (0.063) 0.6 (0.024) 1.1 (0.043) 2.85 (0.112) 2.50 (0.098) 1.5 (0.059) 0.20 (0.008) 0.40 (0.016) cathode bar Document no.: S8-V-3910.02-001 (4) Rev. 03 - Date: 08.November 2004 17443 Document Number 85682 Rev. 1.7, 18-Sep-06 www.vishay.com 3 SD103AWS-V/103BWS-V/103CWS-V Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 4 Document Number 85682 Rev. 1.7, 18-Sep-06 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1