VISHAY SD1100C25C

SD1100C..C Series
Vishay High Power Products
Standard Recovery Diodes
(Hockey PUK Version), 1400 A
FEATURES
•
•
•
•
•
•
•
B-43
Wide current range
High voltage ratings up to 3200 V
High surge current capabilities
Diffused junction
Hockey PUK version
Case style B-43
Lead (Pb)-free
RoHS
COMPLIANT
TYPICAL APPLICATIONS
•
•
•
•
•
PRODUCT SUMMARY
IF(AV)
1400 A
Converters
Power supplies
Machine tool controls
High power drives
Medium traction applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV)
25 TO 32
1400
1100
A
55
55
°C
2500
2000
A
25
25
°C
50 Hz
13 000
10 500
60 Hz
13 600
11 000
Ths
IFSM
I2 t
VRRM
A
50 Hz
846
551
60 Hz
772
503
400 to 2000
2500 to 3200
V
- 40 to 180
- 40 to 150
°C
Range
TJ
UNITS
04 TO 20
Ths
IF(RMS)
SD1100C..C
kA2s
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
04
400
500
08
800
900
12
1200
1300
16
1600
1700
20
2000
2100
25
2500
2600
30
3000
3100
32
3200
3300
SD1100C..C
Document Number: 93535
Revision: 14-May-08
For technical questions, contact: [email protected]
IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
35
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SD1100C..C Series
Vishay High Power Products Standard Recovery Diodes
(Hockey PUK Version),
1400 A
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at heatsink temperature
t = 10 ms
t = 8.3 ms
IFSM
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
t = 8.3 ms
I2t
t = 10 ms
I2√t
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
55 (85)
55 (85)
2500
2000
13 000
10 500
13 600
11 000
10 930
8830
11 450
9250
846
551
772
503
598
390
100 % VRRM
reapplied
546
356
t = 0.1 to 10 ms, no voltage reapplied
8460
5510
t = 8.3 ms
Maximum I2√t for fusing
No voltage
reapplied
100 % VRRM
reapplied
25 TO 32
1400 (795) 1100 (550)
25 °C heatsink temperature double side cooled
IF(RMS)
Maximum peak, one-cycle forward,
non-repetitive current
04 TO 20
180° conduction, half sine wave
Double side (single side) cooled
IF(AV)
Maximum RMS forward current
SD1100C..C
TEST CONDITIONS
Low level value of threshold voltage
VF(TO)1
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
0.78
0.84
High level value of threshold voltage
VF(TO)2
(I > π x IF(AV)), TJ = TJ maximum
0.94
0.88
Low level value of forward
slope resistance
rf1
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
0.35
0.40
High level value of forward
slope resistance
rf2
(I > π x IF(AV)), TJ = TJ maximum
0.26
0.38
VFM
Ipk = 1500 A, TJ = TJ maximum
tp = 10 ms sinusoidal wave
1.31
1.44
UNITS
A
°C
A
kA2s
kA2√s
V
mΩ
Maximum forward voltage drop
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
SD1100C..C
TEST CONDITIONS
04 TO 20
TJ
- 40 to 180 - 40 to 150
TStg
- 55 to 200
RthJ-hs
DC operation single side cooled
0.076
DC operation double side cooled
0.038
Mounting force, ± 10 %
Approximate weight
Case style
25 TO 32
See dimensions - link at the end of datasheet
UNITS
°C
K/W
9800 (1000)
N (kg)
83
g
B-43
ΔRthJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
SINGLE SIDE
DOUBLE SIDE
SINGLE SIDE
DOUBLE SIDE
180°
0.007
0.007
0.005
0.005
120°
0.008
0.008
0.008
0.008
90°
0.010
0.010
0.011
0.011
60°
0.015
0.015
0.016
0.016
30°
0.026
0.026
0.026
0.026
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
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For technical questions, contact: [email protected]
Document Number: 93535
Revision: 14-May-08
SD1100C..C Series
Standard Recovery Diodes Vishay High Power Products
(Hockey PUK Version),
1400 A
SD 1100C..C Series (400V to 2000V )
(Single Side Cooled)
R th J- hs (DC) = 0.076 K/W
160
140
120
C o ndu ct io n A ng le
100
30°
60°
80
90°
120°
180°
60
40
0
200
400
600
800
1000
180
M a xim u m A llo w a b le H e a t sin k Te m p e ra t u re (°C )
Maxim um Allowable Heatsink Temperature (°C)
180
S D 1 1 0 0 C ..C S e rie s (4 0 0 V t o 2 0 0 0 V )
(D o ub le Sid e C o o le d )
R th J- hs (D C ) = 0 .0 3 8 K/ W
160
140
120
Co nd uc tio n Pe rio d
100
30 °
60 °
80
90°
60
1 2 0°
1 8 0°
40
20
DC
0
0
140
120
Co nd uc tio n Pe rio d
100
80
60
9 0°
40
30 °
6 0°
1 2 0°
1 8 0°
DC
20
0
400
80 0
12 0 0
1 6 00
130
120
110
C o nd uct io n An g le
100
90
80
30°
70
140
120
Co nd uc tio n A ng le
100
30 °
60°
90°
120 °
180 °
20
0
4 00
80 0
12 0 0
1 6 00
2 0 00
A v e ra g e F o rw a rd C u rr e n t (A )
Fig. 3 - Current Ratings Characteristics
Document Number: 93535
Revision: 14-May-08
60°
60
90°
120°
180°
50
40
0
200
400
600
800
Fig. 5 - Current Ratings Characteristics
Maxim um Allowable Heatsink Tem perature ( °C)
M a xim u m A llo w a b le H e a tsin k T e m p e ra tu re (° C )
S D 1 1 0 0 C ..C Se rie s (4 0 0 V t o 2 0 0 0 V )
(D o u b le S id e C o o le d )
R th J-hs (D C ) = 0 .0 3 8 K /W
40
3 0 00
Average Forward Current ( A)
180
60
2 5 00
SD 1100C..C Series (2500V to 3200V )
(Single Side Cooled)
R thJ- hs (DC) = 0.076 K/W
140
Fig. 2 - Current Ratings Characteristics
80
2 0 00
150
A v e ra g e Fo rw a rd C u rre n t (A )
160
1500
Fig. 4 - Current Ratings Characteristics
Maxim um Allowable Heatsin k Tem perature (°C)
M a x im u m A llo w a b le H e a tsin k Te m p e ra t u re (°C )
S D 1 1 0 0 C ..C S e rie s (4 0 0 V t o 2 0 0 0 V )
(S in gle Sid e C o o le d )
R thJ-hs (D C ) = 0 .0 7 6 K /W
160
10 0 0
A v e ra g e F o rw a r d C u rre n t (A )
Average Forward Curren t (A)
Fig. 1 - Current Ratings Characteristics
180
500
150
140
130
120
110
100
90
80
70
60
50
40
30
20
SD1100C..C Series (2500V to 3200V)
(Single Side Cooled)
R th J-hs (DC) = 0.076 K/W
C o ndu ct io n Pe rio d
90°
60°
120°
30°
0
200
400
180°
600
DC
800 1000 1200 1400
Average Forward Curren t (A)
Fig. 6 - Current Ratings Characteristics
For technical questions, contact: [email protected]
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SD1100C..C Series
Vishay High Power Products Standard Recovery Diodes
4500
150
140
130
120
110
100
90
80
70
60
50
40
30
20
SD 1100C..C Series (2500V to 3200V)
(Double Side Cooled )
R thJ-h s (D C) = 0.038 K/W
C o nd uct io n A ng le
30°
0
200
400
60°
600
90°
120°
180°
Maxim um Average Forward Power Loss (W )
Maximum Allowable Heatsink Tem perature (°C)
(Hockey PUK Version),
1400 A
4000
DC
180°
120°
90°
60°
30°
3500
3000
2500
2000
C o ndu c tio n Pe rio d
1500
SD1100C..C Series
(400V to 2000V )
TJ = 180°C
1000
500
0
0
800 1000 1200 1400
500
Average Forw ard Curren t (A)
2000
2500
3000
3000
150
140
130
120
110
100
90
80
70
60
50
40
30
20
SD1100C..C Series (2500V to 3200V)
(Double Side Cooled)
R thJ-h s (D C) = 0.038 K/W
C o nduc tion Pe rio d
30°
60°
90°
120°
180°
DC
0
400
800
1200 1600
2000 2400
Maximum A verage Forward Power Loss (W )
Maxim um Allowable Heatsink Temperature (°C)
1500
Fig. 10 - Forward Power Loss Characteristics
180°
120°
90°
60°
30°
2500
2000
RM S Limit
1500
C o nd uc tio n Ang le
1000
SD1100C..C Series
(2500V to 3200V)
TJ = 150°C
500
0
0
200
Avera ge Forward Curren t (A)
400
600
800 1000 1200 1400
Average Forw ard Current (A)
Fig. 8 - Current Ratings Characteristics
Fig. 11 - Forward Power Loss Characteristics
3500
180°
120°
90°
60°
30°
3000
2500
RMS Limit
2000
1500
1000
C o nd uct io n A ng le
500
SD 1100C..C Series
(400V to 2000V)
TJ = 180°C
0
0
400
800
1200
1600
Average Forward Curren t (A)
Fig. 9 - Forward Power Loss Characteristics
Maxim um Average Forw ard Power Loss (W )
3500
Maxim um Average Forward Power Loss (W )
1000
Average Forward Current (A)
Fig. 7 - Current Ratings Characteristics
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RM S Lim it
DC
180°
120°
90°
60°
30°
3000
2500
RMS Lim it
2000
1500
C o ndu ctio n Pe rio d
1000
SD1100C..C Series
(2500V to 3200V )
TJ = 150°C
500
0
0
400
800
1200
1600
2000
2400
Average Forward Current (A)
Fig. 12 - Forward Power Loss Characteristics
For technical questions, contact: [email protected]
Document Number: 93535
Revision: 14-May-08
SD1100C..C Series
Standard Recovery Diodes Vishay High Power Products
(Hockey PUK Version),
1400 A
A t A n y R a t e d Lo a d C o n d it io n A n d W it h
R a t e d V RRM A p p lie d Fo llo w in g S urg e .
In it ia l TJ = 1 8 0 °C
@ 6 0 H z 0 .0 0 8 3 s
@ 5 0 H z 0 .0 1 0 0 s
1 1 00 0
1 0 00 0
9 0 00
8 0 00
7 0 00
6 0 00
5 0 00
SD 1 1 0 0 C ..C S e rie s
(4 0 0 V t o 2 0 0 0 V )
4 0 00
3 0 00
1
10
11000
Peak Half Sine W ave Forward Curren t (A)
P e a k H a lf S in e W a v e Fo rw a rd C u rre n t (A )
1 2 00 0
10 0
10000
9000
M aximum Non Repet itive Surge Current
Versus Pulse Train Duration.
Initial TJ = 150 °C
No V oltage Reapplied
Rated V R RMReapplied
8000
7000
6000
5000
4000
SD 1100C..C Series
(2500V to 3200V)
3000
0.01
0.1
Fig. 16 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
14000
10000
Maxim um Non Repetitive Surge Current
V ersus Pulse Train Duration .
In itial TJ = 180 °C
No Voltage Reapplied
Rated V RRMReapplied
13000
12000
11000
10000
TJ = 25°C
Instan tan eous Forw ard Curren t (A)
Pea k Half Sine Wave Forward Current (A)
Fig. 13 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
9000
8000
7000
6000
5000
SD1100C..C Series
(400V to 2000V )
4000
3000
0.01
0.1
TJ = 180°C
1000
SD1100C..C Series
(400V to 2000V )
100
0.5
1
Pulse Train Dura tion (s)
At An y Rated Load Con dition And W ith
Rated V R RMApplied Following Surge.
Initial TJ = 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
9000
8000
7000
6000
5000
SD 1100C..C Series
(2500V to 3200V)
4000
3000
1
10
10 0
N um b e r O f Equ al A m plitud e Half Cy c le C urre nt P ulse s (N )
Fig. 15 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Document Number: 93535
Revision: 14-May-08
1.5
2
2.5
3
3.5
4
Fig. 17 - Forward Voltage Drop Characteristics
10000
TJ = 25°C
In stantaneous Forw ard Current (A)
10000
1
Instan ta neous Forward V oltage (V)
Fig. 14 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Peak Half Sine W ave Forward Curren t (A)
1
Pulse Train Duration (s)
N um b er O f E qua l A m plitud e H alf C y cle Cu rre nt Pulse s (N )
TJ = 150°C
1000
SD 1100C..C Series
(2500V to 3200V )
100
0.5
1
1.5
2
2. 5
3
3.5
4
4.5
5
In stantan eous Forward Voltage (V)
Fig. 18 - Forward Voltage Drop Characteristics
For technical questions, contact: [email protected]
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SD1100C..C Series
Vishay High Power Products Standard Recovery Diodes
(Hockey PUK Version),
1400 A
T ra n sie n t T h e rm a l Im p e d a n c e Z th J-hs ( K /W )
0 .1
St e a d y St at e V a lue
R thJ-hs = 0 .0 7 6 K /W
( Sing le Sid e C o o le d )
R thJ-hs = 0 .0 3 8 K /W
( D o u ble Sid e C o o le d )
0 .0 1
( D C O p e ra t io n )
SD 1 1 0 0 C ..C Se rie s
0 .0 0 1
0.0 01
0 .01
0. 1
1
10
Sq u a re W a v e Pu lse D u rat io n ( s)
Fig. 19 - Thermal Impedance ZthJ-hs Characteristics
ORDERING INFORMATION TABLE
Device code
SD
110
0
C
32
C
1
2
3
4
5
6
1
-
Diode
2
-
Essential part number
3
-
0 = Standard recovery
4
-
C = Ceramic PUK
5
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
6
-
C = PUK case B-43
LINKS TO RELATED DOCUMENTS
Dimensions
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http://www.vishay.com/doc?95249
For technical questions, contact: [email protected]
Document Number: 93535
Revision: 14-May-08
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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