VISHAY SFH615AY

VISHAY
SFH615AA/AGB/AGR/ABM/ABL/AY/AB
Vishay Semiconductors
Optocoupler, High Reliability, 5300 VRMS
Features
• Low CTR Degradation
• Good CTR Linearity Depending on Forward Current
• Isolation Test Voltage, 5300 VRMS
• High Collector-emitter Voltage, VCEO = 70 V
• Low Saturation Voltage
• Fast Switching Times
• Temperature Stable
• Low Coupling Capacitance
• End-Stackable, .100 " (2.54 mm) Spacing
• High Common-mode Interference Immunity
(Unconnected Base)
A 1
4
C
C
3
E
2
i179060
Order Information
Part
Remarks
SFH615AA
CTR 50 - 600 %, DIP-4
SFH615AB
CTR 80 - 260 %, DIP-4
SFH615ABL
CTR 200 - 600 %, DIP-4
SFH615ABM
CTR 200 - 400 %, DIP-4
SFH615AGB
CTR 100 - 600 %, DIP-4
SFH615AGR
CTR 100 - 300 %, DIP-4
Description
SFH615AY
CTR 50 - 150 %, DIP-4
The SFH615XXX features a large assortment of current transfer ratio, low coupling capacitance and high
isolation voltage. These couplers have a GaAs infrared emitting diode emitter, which is optically coupled
to a silicon planar phototransistor detector, and is
incorporated in a plastic DIP-4 package.
The coupling devices are designed for signal transmission between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm lead
spacing.
Creepage and clearance distances of > 8 mm are
achieved with option 6. This version complies with
60950 (DIN VDE 0805) for reinforced insulation up to
operation voltage of 400 VRMS or DC.
SFH615AA-X006
CTR 50 - 600 %, DIP-4 400 mil (option 6)
SFH615AA-X007
CTR 50 - 600 %, SMD-4 (option 7)
SFH615ABM-X006
CTR 200 - 400 %, DIP-4 400 mil (option 6)
Agency Approvals
• UL - File No. E52744 System Code H or J
• DIN EN 60747-5-2(VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Document Number 83672
Rev. 1.4, 19-Apr-04
SFH615ABM-X007
CTR 200 - 400 %, SMD-4 (option 7)
SFH615AGB-X006
CTR 100 - 600 %, DIP-4 400 mil (option 6)
SFH615AGB-X009
CTR 100 - 600 %, SMD-4 (option 9)
SFH615AGR-X006
CTR 100 - 300 %, DIP-4 400 mil (option 6)
SFH615AGR-X007
CTR 100 - 300 %, SMD-4 (option 7)
SFH615AY-X006
CTR 50 - 150 %, DIP-4 400 mil (option 6)
SFH615AY-X008
CTR 50 - 150 %, SMD-4 (option 8)
SFH615AY-X009
CTR 50 - 150 %, SMD-4 (option 9)
For additional information on the available options refer to
Option Information.
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SFH615AA/AGB/AGR/ABM/ABL/AY/AB
VISHAY
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Symbol
Value
Reverse voltage
Parameter
VR
6.0
V
DC Forward current
IF
60
mA
IFSM
2.5
A
Pdiss
100
mW
Surge forward current
Test condition
tp ≤ 1.0 ms
Power dissipation
Unit
Output
Symbol
Value
Unit
Collector-emitter voltage
Parameter
Test condition
VEC
70
V
Emitter-collector voltage
VCE
7.0
V
Collector current
IC
50
mA
IC
100
mA
Pdiss
150
mW
Symbol
Value
Unit
VISO
5300
VRMS
Creepage
≥ 7.0
mm
Clearance
≥ 7.0
mm
Insulation thickness between
emitter and detector
comparative tracking index per
DIN IEC 112/VDEO 303, part 1
≥ 175
tp ≤ 1.0 ms
Total power dissipation
Coupler
Parameter
Test condition
Isolation test voltage between
emitter and detector, refer to
climate DIN 40046 part 2,
Nov.74
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
11
Ω
≥ 10
Storage temperature range
Tstg
- 55 to + 150
°C
Ambient temperature range
Tamb
- 55 to + 100
°C
Tj
100
°C
Tsld
260
°C
Junction temperature
Soldering temperature
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2
max. 10 s. dip soldering
distance to seating plane
≥ 1.5 mm
Document Number 83672
Rev. 1.4, 19-Apr-04
VISHAY
SFH615AA/AGB/AGR/ABM/ABL/AY/AB
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Typ.
Max
Forward voltage
Parameter
IF = 60 mA
Test condition
VF
1.25
1.65
V
Reverse current
VR = 6.0 V
IR
0.01
10
µA
Capacitance
VR = 0 V, f = 1.0 MHz
Thermal resistance
Symbol
Min
Unit
CO
13
pF
Rthja
750
K/W
Output
Parameter
Collector-emitter capacitance
Test condition
VCE = 5 V, f = 1.0 MHz
Thermal resistance
Symbol
Min
Typ.
Max
Unit
CCE
5.2
pF
Rthja
500
K/W
Coupler
Parameter
Collector-emitter saturation
voltage
Test condition
Part
IF = 10 mA, IC = 2.5 mA
VCEO = 10 V
Typ.
Max
Unit
VCEsat
Min
0.25
0.4
V
CC
0.4
SFH615AA
ICEO
10
100
nA
Coupling capacitance
Collector-emitter leakage
current
Symbol
pF
SFH615AGB
ICEO
10
100
nA
SFH615AGR
ICEO
10
100
nA
SFH615ABM
ICEO
10
100
nA
SFH615ABL
ICEO
10
100
nA
SFH615AY
ICEO
10
100
nA
SFH615AB
ICEO
10
100
nA
Typ.
Max
Unit
Current Transfer Ratio
Parameter
IC/IF
Document Number 83672
Rev. 1.4, 19-Apr-04
Test condition
IF = 5.0 mA, VCE = 5.0 V
Part
Symbol
Min
SFH615AA
CTR
50
600
%
SFH615AGB
CTR
100
600
%
SFH615AGR
CTR
100
300
%
SFH615ABM
CTR
200
400
%
SFH615ABL
CTR
200
600
%
SFH615AY
CTR
50
150
%
SFH615AB
CTR
80
260
%
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SFH615AA/AGB/AGR/ABM/ABL/AY/AB
VISHAY
Vishay Semiconductors
Switching Characteristics
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Turn-on time
IF = 5.0 mA
ton
2.0
µs
Turn-off time
IF = 5.0 mA
toff
25
µs
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
f = 1.0 MHz
IF
1Ω
VCC = 5 V
47 Ω
isfh615aa_01
isfh615aa_03
Fig. 1 Switching Operation (with Saturation)
Fig. 3 Transistor Capacitance (typ.) vs. Collector-Emitter Voltage
IF = 10 mA, VCC = 5.0 V
isfh615aa_02
Fig. 2 Current Transfer Ratio (typical) vs. Temperature
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4
isfh615aa_04
Fig. 4 Permissible Diode Forward Current vs. Ambient
Temperature
Document Number 83672
Rev. 1.4, 19-Apr-04
VISHAY
SFH615AA/AGB/AGR/ABM/ABL/AY/AB
Vishay Semiconductors
isfh615aa_05
isfh615aa_08
Fig. 5 Output Characteristics (typ.) Collector Current vs.
Collector-Emitter Voltage
Fig. 8 Permissible Power Dissipation vs. Temperature
Pulse cycle
D = parameter,
isfh615aa_06
Fig. 6 Permissible Pulse Handling Capability Forward Current vs.
Pulse Width
isfh615aa_07
Fig. 7 Diode Forward Voltage (typ.) vs. Forward Current
Document Number 83672
Rev. 1.4, 19-Apr-04
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SFH615AA/AGB/AGR/ABM/ABL/AY/AB
VISHAY
Vishay Semiconductors
Package Dimensions in Inches (mm)
2
1
pin one ID
.255 (6.48)
.268 (6.81)
ISO Method A
3
4
.179 (4.55)
.190 (4.83)
.030 (.76)
.045 (1.14)
.031 (.79) typ.
.050 (1.27) typ.
.300 (7.62) typ.
.130 (3.30)
.150 (3.81)
4°
typ.
i178027
.018 (.46)
.022 (.56)
.230 (5.84)
.250 (6.35)
10°
.020 (.508 )
.035 (.89)
.050 (1.27)
.100 (2.54)
3°–9°
.110 (2.79)
.130 (3.30)
.008 (.20)
.012 (.30)
Option 6
Option 7
.407 (10.36)
.391 (9.96)
.307 (7.8)
.291 (7.4)
.300 (7.62)
TYP.
.028 (0.7)
MIN.
.180 (4.6)
.160 (4.1)
.315 (8.0)
MIN.
.400 (10.16)
.430 (10.92)
.014 (0.35)
.010 (0.25)
.331 (8.4)
MIN.
.406 (10.3)
MAX.
Option 9
Option 8
.375 (9.53)
.395 (10.03)
.300 (7.62)ref.
.300 (7.62)
TYP.
.020 (0.50)
.000 (0.00)
18486
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6
.150 (3.81)
.130 (3.30)
.365 (9.27)
MIN.
.472 (12.00)
MAX.
0040 (.102)
0098 (.249)
.012 (.30) typ.
.020 (.51)
.040 (1.02)
.315 (8.00)
min.
15° max.
Document Number 83672
Rev. 1.4, 19-Apr-04
SFH615AA/AGB/AGR/ABM/ABL/AY/AB
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83672
Rev. 1.4, 19-Apr-04
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