SFH600 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection FEATURES • Isolation test voltage (1.0 s), 5300 VRMS A 6 B 1 • VCEsat = 0.25 (≤ 0.4) V, IF = 10 mA, IC = 2.5 mA • Built to conform to VDE requirements C 2 5 C NC 3 4 E • High quality premium device • Long term stability • Storage temperature, - 55 °C to + 150 °C i179004 • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC DESCRIPTION The SFH600 is an optocoupler with a GaAs LED emitter which is optically coupled with a silicon planar phototransistor detector. The component is packaged in a plastic plug-in case, 20 AB DIN 41866. The coupler transmits signals between two electrically isolated circuits. The potential difference between the circuits to be coupled should not exceed the maximum permissible insulating voltage. AGENCY APPROVALS • UL1577, file no. E52744 system code H or J, double protection • DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending available with option 1 • CSA 93751 • BSI IEC 60950; IEC 60065 ORDER INFORMATION PART REMARKS SFH600-0 CTR 40 to 80 %, DIP-6 SFH600-1 CTR 63 to 125 %, DIP-6 SFH600-2 CTR 100 to 200 %, DIP-6 SFH600-3 CTR 160 to 320 %, DIP-6 SFH600-0X007 CTR 40 to 80 %, SMD-6 (option 7) SFH600-1X007 CTR 63 to 125 %, SMD-6 (option 7) SFH600-1X009 CTR 63 to 125 %, SMD-6 (option 9) SFH600-2X006 CTR 100 to 200 %, DIP-6 400 mil (option 6) SFH600-2X007 CTR 100 to 200 %, SMD-6 (option 7) SFH600-3X006 CTR 160 to 320 %, DIP-6 400 mil (option 6) SFH600-3X007 CTR 160 to 320 %, SMD-6 (option 7) Note For additional information on the available options refer to option information. ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 6.0 V DC forward current IF 60 mA INPUT Surge forward current tP ≤ 10 µs IFSM 2.5 A Pdiss 100 mW Collector emitter voltage VCE 70 V Emitter base voltage VEB 7.0 V IC 50 mA IC 100 mA Pdiss 150 mW Total power dissipation OUTPUT Collector current Power dissipation Document Number: 83662 Rev. 1.5, 10-Jan-08 t = 1.0 ms For technical questions, contact: [email protected] www.vishay.com 1 SFH600 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT t = 1.0 s VISO 5300 VRMS COUPLER Isolation test voltage between emitter and detector, refer to climate DIN 40046, part 2, Nov. 74 Creepage distance ≥7 mm Clearance distance ≥7 mm Isolation thickness between emitter and detector ≥ 0.4 mm Comparative tracking index per DIN IEC 112/VDE 0303, part 1 175 Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Tstg - 55 to + 150 °C Storage temperature range Ambient temperature range Junction temperature Soldering temperature (2) Ω Tamb - 55 to + 100 °C max. 10 s, dip soldering Tj 100 °C max. 10 s, dip soldering: distance to seating plane ≥ 1.5 mm Tsld 260 °C Notes (1) T amb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT 1.25 1.65 V 0.01 10 µA INPUT Forward voltage IF = 60 mA VF Breakdown voltage IR = 10 µA VBR Reverse current VR = 6.0 V IR Capacitance VF = 0 V, f = 1 MHz Thermal resistance 6.0 V CO 25 pF Rthja 750 K/W OUTPUT Collector emitter capacitance f = 1.0 mHz, VCE = 5.0 V CCE 5.2 pF Collector base capacitance f = 1.0 mHz, VCB = 5.0 V CCB 6.5 pF Emitter base capacitance f = 1.0 mHz, VEB = 5.0 V CEB 9.5 pF Rthja 500 K/W SFH600-0 ICEO 2.0 35 nA SFH600-1 ICEO 2.0 35 nA SFH600-2 ICEO 2.0 35 nA SFH600-3 ICEO 5.0 70 nA VCEsat 0.25 0.4 V 0.6 pF Thermal resistance Collector emitter leakage current VCE = 10 V COUPLER Saturation voltage collector emitter voltage Capacitance (input to output) IF = 10 mA, IC = 2.5 mA CIO Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 83662 Rev. 1.5, 10-Jan-08 SFH600 Optocoupler, Phototransistor Output, Vishay Semiconductors with Base Connection CURRENT TRANSFER RATIO PARAMETER TEST CONDITION IF = 10 mA IC/IF at VCE = 5.0 V IF = 1.0 mA PART SYMBOL MIN MAX UNIT SFH600-0 CTR 40 TYP. 80 % SFH600-1 CTR 63 125 % SFH600-2 CTR 100 200 % SFH600-3 CTR 160 320 % SFH600-0 CTR 13 30 % SFH600-1 CTR 22 45 % SFH600-2 CTR 34 70 % SFH600-3 CTR 56 90 % PART SYMBOL MIN. TYP. SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION MAX. UNIT NON-SATURATED Current VCC = 5.0 V, RL = 75 Ω IF 10 mA Rise time VCC = 5.0 V, RL = 75 Ω tr 2.0 µs Fall time VCC = 5.0 V, RL = 75 Ω tf 2.5 µs Turn-on time VCC = 5.0 V, RL = 75 Ω ton 3.2 µs Turn-off time VCC = 5.0 V, RL = 75 Ω toff 3.0 µs Cut-off frequency VCC = 5.0 V, RL = 75 Ω FCO 250 kHz SATURATED Current Rise time Fall time Turn-on time Turn-off time Document Number: 83662 Rev. 1.5, 10-Jan-08 SFH600-0 IF 20 mA SFH600-1 IF 10 mA SFH600-2 IF 10 mA SFH600-3 IF 5.0 mA SFH600-0 tr 2.5 µs SFH600-1 tr 3.0 µs SFH600-2 tr 3.0 µs SFH600-3 tr 4.0 µs SFH600-0 tf 11 µs SFH600-1 tf 12 µs SFH600-2 tf 12 µs SFH600-3 tf 14 µs SFH600-0 ton 3.7 µs SFH600-1 ton 4.5 µs SFH600-2 ton 4.5 µs SFH600-3 ton 5.8 µs SFH600-0 toff 19 µs SFH600-1 toff 21 µs SFH600-2 toff 21 µs SFH600-3 toff 24 µs For technical questions, contact: [email protected] www.vishay.com 3 SFH600 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified % 103 R L = 75 Ω IF V CC = 5 V IC 5 IC IF (TA = 0 ˚C, VCE = 5.0 V) IC/IF = f (IF) 102 5 47 Ω 0 1 2 3 101 5 isfh600_01 100 10-1 100 5 IF isfh600_04 Fig. 1 - Linear Operation (Without Saturation) 101 mA 5 Fig. 4 - Current Transfer Ratio vs. Diode Current % 103 1 kΩ IF VCC = 5 V 5 IC IF (VCE = 5.0 V) IC/IF = f (IF) 102 5 0 1 2 3 101 47 Ω 5 isfh600_02 100 10-1 100 5 isfh600_05 Fig. 2 - Switching Operation (With Saturation) 5 % 103 (TA = - 25 ˚C, VCE = 5.0 V) IC IF IC/IF = f (IF) 102 0 1 2 3 101 5 5 5 100 IF 5 101 mA Fig. 3 - Current Transfer Ratio vs. Diode Current www.vishay.com 4 (TA = 50 ˚C, IC/IF = f (IF) 5 0 1 2 3 101 isfh600_03 5 102 5 100 10-1 101 mA 5 Fig. 5 - Current Transfer Ratio vs. Diode Current % 103 IC IF IF 100 10-1 isfh600_06 5 100 IF 5 101 mA Fig. 6 - Current Transfer Ratio vs. Diode Current For technical questions, contact: [email protected] Document Number: 83662 Rev. 1.5, 10-Jan-08 SFH600 Optocoupler, Phototransistor Output, Vishay Semiconductors with Base Connection % 103 IC IF OHODO504 DC Pulsbetrieb Pulse Ic 5 (TA = 75 ˚C, VCE = 5.0 V) IC/IF = f (lF) 30 2 1 0 5 IF = 14 mA (IC = f (VCE) 3 102 IF = 12 mA 20 IF = 10 mA IF = 7 mA 101 5 10 DC Pulsbetrieb Pulse 100 5 IF isfh600_07 5 mA 101 0 IF = 2 mA 5 10 15 V VCE isfh600_10 Fig. 7 - Current Transfer Ratio vs. Diode Current % 103 IF = 5 mA IF = 1 mA 0 100 10-1 IC IF OHODO498 40 Fig. 10 - Output Characteristics SFH600-2, -3 OHODO501 1.2 DC Pulsbetrieb Pulse 5 VF VF = f (IF) V 25 °C 50 °C 75 °C 3 1.1 2 1 102 0 5 1.0 (IF = 10 mA, VCE = 5.0 V) IC/IF = f (T) 101 - 25 0 25 50 °C 75 0.9 TA isfh600_08 10-1 5 100 5 101 isfh600_11 102 5 mA IF Fig. 8 - Current Transfer Ratio (CTR) vs. Temperature Fig. 11 - Forward Voltage OHODO497 30 Ic mA 25 DC Pulsbetrieb Pulse IB = 40 µA (IC = f (VCE) 20 IB = 30 µA IF = 0 15 VCE = 35 V ICEO = f (V,T) (IF = 0) 10-1 IB = 20 µA IB = 15 µA 10 IB = 10 µA 5 0 100 ICEO µA VCE = 12 V 10-2 IB = 5 µA IB = 2 µA 0 isfh600_09 5 10 V VCE 15 10-3 0 25 isfh600_12 50 75 °C TA 100 Fig. 9 - Transistor Characteristics SFH600-2, -3 Fig. 12 - Collector Emitter Off-state Current Document Number: 83662 Rev. 1.5, 10-Jan-08 For technical questions, contact: [email protected] www.vishay.com 5 SFH600 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection 1.0 VCE sat 0.9 V 1.0 VCEsat = f (IC) VCE sat 0.9 0.8 0.7 VCEsat = f (IC) 0.8 IF = 3 x IC 0.7 0.6 0.6 0.5 IF = IC 0.5 0.4 0.4 0.3 0.3 0.2 IF = 2 x IC 0.2 0.1 0.1 100 5 101 isfh600_13 IC 5 102 mA 0 IF = 3 x IC 100 101 IC isfh600_16 Fig. 13 - Saturation Voltage vs. Collector Current and Modulation Depth SFH600-0 102 mA Fig. 16 - Saturation Voltage vs. Collector Current and Modulation Depth SFH600-3 V 1.0 1.0 V VCE sat 0.9 VCE sat 0.9 VCEsat = f (IC) 0.8 VCEsat = f (IC) 0.8 0.7 0.7 0.6 0.6 0.5 IF = 2 x IC 0.4 IF = IC 0.5 0.4 0.3 0.3 IF = 3 x IC 0.2 IF = 2 x IC 0.2 0.1 0.1 100 101 isfh600_14 IC mA 102 0 IF = 3 x IC 100 isfh600_16 Fig. 14 - Saturation Voltage vs. Collector Current and Modulation Depth SFH600-1 V 1.0 VCE sat 0.9 Transistor IF = IC 0.6 0.5 102 mA Ptot = f (TA) 150 0.7 IC Fig. 17 - Permissible Pulse Load 200 Ptot mW VCEsat = f (IC) 0.8 101 100 0.4 0.3 0.1 0 Diode IF = 2 x IC 0.2 50 IF = 3 x IC 100 isfh600_15 101 IC 102 mA Fig. 15 - Saturation Voltage vs. Collector Current and Modulation Depth SFH600-2 www.vishay.com 6 0 0 25 isfh600_18 50 75 TA °C 100 Fig. 18 - Permissible Power Dissipation for Transistor and Diode For technical questions, contact: [email protected] Document Number: 83662 Rev. 1.5, 10-Jan-08 SFH600 Optocoupler, Phototransistor Output, Vishay Semiconductors with Base Connection IF 120 mA 24 pF 20 18 C 16 14 12 10 8 6 4 2 0 Ptot = f (TA) 90 60 30 0 0 25 50 75 isfh600_19 TA °C 100 C = f (VO) (f = 1.0 MHz) CEB CCB CCF 10-2 10-1 100 isfh600_20 Fig. 19 - Permissible Forward Current Diode 101 V 102 Ve Fig. 20 - Transistor Capacitance PACKAGE DIMENSIONS in inches (millimeters) 3 2 1 4 5 6 Pin one ID 0.248 (6.30) 0.256 (6.50) ISO method A 0.335 (8.50) 0.343 (8.70) 0.048 0.039 (1.00) min. 0.300 (7.62) (0.45) typ. 0.022 (0.55) 0.130 (3.30) 0.150 (3.81) 18 ° 4° typ. 0.114 (2.90) 0.031 (0.80) min. 0.031 (0.80) 0.018 (0.45) 0.035 (0.90) 0.022 (0.55) 0.100 (2.54) typ. 0.130 (3.0) 3° to 9° 0.010 (0.25) typ. 0.300 to 0.347 (7.62 to 8.81) i178004 Option 6 Option 7 Option 9 0.407 (10.36) 0.391 (9.96) 0.307 (7.8) 0.291 (7.4) 0.300 (7.62) typ. 0.375 (9.53) 0.395 (10.03 ) 0.300 (7.62) ref. 0.028 (0.7) min. 0.315 (8.0) min. 0.014 (0.35) 0.010 (0.25) 0.400 (10.16) 0.430 (10.92) Document Number: 83662 Rev. 1.5, 10-Jan-08 0.331 (8.4) min. 0.180 (4.6) 0.160 (4.1) 0.0040 (0.102) 0.0098 (0.249) 0.012 (0.30 ) typ. 0.020 (0.51 ) 0.040 (1.02 ) 0.406 (10.3) max. For technical questions, contact: [email protected] 15° max. 0.315 (8.00) min. 18450 www.vishay.com 7 SFH600 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 8 For technical questions, contact: [email protected] Document Number: 83662 Rev. 1.5, 10-Jan-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1