VISHAY SI1926DL-T1-E3

New Product
Si1926DL
Vishay Siliconix
Dual N-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
60
rDS(on) (Ω)
ID (A)
1.4 at VGS = 10 V
0.37
3.0 at VGS = 4.5 V
0.25
Qg (Typ)
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• ESD Protected: 1800 V
RoHS
0.47
COMPLIANT
APPLICATIONS
• Low Power Load Switch
SOT-363
SC-70 (6-LEADS)
S1
1
6
D1
D2
D1
G1
D2
5
2
3
4
G2
PD
XX
YY
Marking Code
Lot Traceability
and Date Code
S2
G1
G2
Part # Code
S1
S2
N-Channel MOSFET
N-Channel MOSFET
Top View
Ordering Information: Si1926DL-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)
Limit
60
± 20
0.37
0.30
ID
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
Maximum Power Dissipation
IS
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
V
0.34b, c
0.27b, c
0.65
0.43
IDM
Pulsed Drain Current
Unit
A
0.25b, c
0.51
0.33
0.30b, c
0.20b, c
- 55 to 150
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t≤5s
Steady State
Symbol
RthJA
RthJF
Typical
360
300
Maximum
415
350
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 400 °C/W.
Document Number: 73684
S-72193-Rev. B, 22-Oct-07
www.vishay.com
1
New Product
Si1926DL
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
VDS
VGS = 0 V, ID = 250 µA
60
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 10 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
rDS(on)
Forward Transconductance
gfs
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
tr
mV/°C
-3
1
2.5
VDS = 60 V, VGS = 0 V
10
100
VDS = ≥ 10 V, VGS = 4.5 V
0.50
VDS = ≥ 7.5 V, VGS = 10 V
VGS = 10 V, ID = 0.34
0.65
nA
A
1.4
VGS = 4.5 V, ID = 0.23
VDS = 30 V, ID = 0.2 A
V
± 150
VDS = 60 V, VGS = 0 V, TJ = 85 °C
3
159
Ω
ms
18.5
VDS = 30 V, VGS = 0 V, f = 1 MHz
7.5
pF
4.2
VDS = 30 V, VGS = 10 V, ID = 0.34
VDS = 30 V, VGS = 4.5 V, ID = 0.34
0.9
1.4
0.5
0.75
0.2
nC
0.15
f = 1 MHz
td(on)
td(off)
V
56.7
VDD = 30 V, RL = 100 Ω
ID ≅ 0.3 A, VGEN = 10 V, Rg = 1 Ω
tf
160
240
6.5
10
12
18
13
22
14
21
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
Body Diode Voltage
IS
TC = 25 °C
0.43
ISM
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
0.65
IS = 0.3 A
IF = 0.6 A, di/dt = 100 A/µs
A
0.8
1.2
V
16.5
25
nC
13
20
13.5
ns
3
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73684
S-72193-Rev. B, 22-Oct-07
New Product
Si1926DL
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.7
0.4
VGS = 10 V thru 5 V
0.3
VGS = 4 V
0.5
I D - Drain Current (A)
I D - Drain Current (A)
0.6
0.4
0.3
0.2
TC = 25 °C
0.1
VGS = 3 V
0.1
0.0
0.0
0.2
TC = 125 °C
TC = - 55 °C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
VDS - Drain-to-Source Voltage (V)
2
3
4
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics Curves vs. Temp
3.0
32
24
C - Capacitance (pF)
rDS(on) - On-Resistance (Ω)
2.5
2.0
VGS = 4.5 V
1.5
VGS = 10 V
1.0
Ciss
16
Coss
8
0.5
Crss
0.0
0.0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
10
ID - Drain Current (A)
20
50
60
Capacitance
10
1.6
ID = 0.5 A
VGS = 10 V, ID = 0.5 A
8
1.4
VDS = 30 V
rDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
40
VDS - Drain-Source Voltage (V)
On-Resistance vs. Drain Current
6
VDS = 48 V
4
2
0
0.0
30
1.2
VGS = 4.5 V, ID = 0.2 A
1.0
0.8
0.3
0.6
0.9
Qg - Total Gate Charge (nC)
Qg - Gate Charge
Document Number: 73684
S-72193-Rev. B, 22-Oct-07
1.2
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
www.vishay.com
3
New Product
Si1926DL
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
5.0
1000.00
TA = 150 °C
rDS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 0.5 A
TA = 25 °C
100.00
10.00
1.00
0.0
4.0
3.0
TA = 125 °C
2.0
TA = 25 °C
1.0
0.0
0.3
0.6
0.9
1.2
1.5
3
4
5
6
7
8
9
10
100
600
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
rDS(on) vs. VGS vs. Temperature
Source-Drain Diode Forward Voltage
2.0
5
1.8
4
3
Power (W)
VGS(th) (V)
ID = 250 µA
1.6
1.4
2
1.2
1.0
- 50
1
- 25
0
25
50
75
100
125
0
10-3
150
10 -2
10-1
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
1
Limited by r DS(on) *
I D - Drain Current (A)
10 ms
0.1
100 ms
1s
10 s
0.01
TA = 25 °C
Single Pulse
DC
BVDSS Limited
0.001
0.1
* VGS
1
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which rDS(on) is specified
Safe Operating Area
www.vishay.com
4
Document Number: 73684
S-72193-Rev. B, 22-Oct-07
New Product
Si1926DL
Vishay Siliconix
25 °C, unless otherwise noted
0.5
0.5
0.4
0.4
Power Dissipation (W)
I D - Drain Current (A)
TYPICAL CHARACTERISTICS
0.3
0.2
0.3
0.2
0.1
0.1
0.0
0.0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73684
S-72193-Rev. B, 22-Oct-07
www.vishay.com
5
Si1926DL
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 400 °C/W
3. TJM - T A = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10–2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73684.
www.vishay.com
6
Document Number: 73684
S-72193-Rev. B, 22-Oct-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1