VISHAY SI2305ADS-T1-GE3

New Product
Si2305ADS
Vishay Siliconix
P-Channel 8-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
-8
RDS(on) (Ω)
ID (A)
0.040 at VGS = - 4.5 V
- 4.1
0.060 at VGS = - 2.5 V
- 3.4
0.088 at VGS = - 1.8 V
- 2.0
• Halogen-free Option Available
Qg (Typ.)
• TrenchFET® Power MOSFET
RoHS
• 100 % Rg Tested
COMPLIANT
7.8 nC
APPLICATIONS
• Load Switch
• DC/DC Converter
TO-236
(SOT-23)
G
1
S
2
S
3
D
G
Top View
Si2305ADS (A5)*
* Marking Code
D
Ordering Information: Si2305ADS-T1-E3 (Lead (Pb)-free)
Si2305ADS-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
IDM
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
Document Number: 69940
S-82713-Rev. C, 10-Nov-08
ID
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
IS
PD
TJ, Tstg
Limit
-8
±8
- 5.4
- 4.3
- 4.1a, b
- 3.3a, b
- 10
- 1.4
- 0.8a, b
1.7
1.1
0.96a, b
0.62a, b
- 50 to 150
260
Unit
V
A
W
°C
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New Product
Si2305ADS
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
t ≤ 10 s
Steady State
Maximum Junction-to-Ambienta, b
Maximum Junction-to-Foot (Drain)
Symbol
RthJA
RthJF
Typical
100
60
Maximum
130
75
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 175 °C/W.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS
VGS = 0 V, ID = - 250 µA
-8
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
ID = - 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
RDS(on)
Forward Transconductancea
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
gfs
tr
Rise Time
Fall Time
Turn-On Delay Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
a
Pulse Diode Forward Current
Body Diode Voltage
V
nA
-1
- 10
-5
0.040
VGS = - 2.5 V, ID = - 3.4 A
0.048
0.060
VGS = - 1.8 V, ID = - 2.0 A
0.070
0.088
VDS = - 5 V, ID = - 4.1 A
8
740
VDS = - 4 V, VGS = 0 V, f = 1 MHz
290
pF
190
VDS = - 4 V, VGS = - 4.5 V, ID = - 4.1 A
VDS = - 4 V, VGS = - 2.5 V, ID = - 4.1 A
7.8
15
4.5
9
1.2
VDD = - 4 V, RL = 1.2 Ω
ID ≅ - 3.3 A, VGEN = - 4.5 V, Rg = 1 Ω
1.4
7
14
13
20
tf
10
20
5
10
VDD = - 4 V, RL = 1.2 Ω
ID ≅ - 3.3 A, VGEN = - 8 V, Rg = 1 Ω
11
17
22
33
16
24
TC = 25 °C
- 1.4
ISM
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
nC
1.6
f = 1 MHz
td(on)
VSD
Ω
S
53
IS
µA
A
0.032
tf
Fall Time
- 0.8
± 100
48
td(off)
Turn-Off DelayTime
- 0.45
35
tr
Rise Time
mV/°C
2.1
VDS = - 8 V, VGS = 0 V
VDS ≤ - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 4.1 A
Unit
V
- 55
32
td(off)
Turn-Off DelayTime
Max.
VDS = - 8 V, VGS = 0 V, TJ = 55 °C
td(on)
Turn-On Delay Time
Typ.
- 10
IF = - 3.3 A
IF = - 3.3 A, dI/dt = 100 A/µs, TJ = 25 °C
Ω
ns
A
- 0.8
- 1.2
V
33
50
ns
14
21
nC
14
19
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 69940
S-82713-Rev. C, 10-Nov-08
New Product
Si2305ADS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
12
VGS = 4.5 thru 2 V
9
9
6
I D - Drain Current (A)
I D - Drain Current (A)
12
VGS = 1.5 V
6
3
3
TC = 125 °C
TC = 25 °C
VGS = 0.5 V
VGS = 1 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
TC = - 55 °C
0
0.0
4.0
0.5
VDS - Drain-to-Source Voltage (V)
1.5
2.0
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.10
1200
VGS = 1.8 V
0.08
900
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
1.0
0.06
VGS = 2.5 V
Ciss
600
Coss
0.04
300
VGS = 4.5 V
Crss
0.02
0
0
2
4
6
8
10
0
2
ID - Drain Current (A)
6
8
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
4.5
1.5
ID = 4.1 A
3.6
2.7
VDS = 6.4 V
1.8
VDS = 2.5 V, ID = 3.4 A
1.3
(Normalized)
VDS = 4 V
RDS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
4
1.1
VDS = 4.5 V, ID = 4.1 A
0.9
0.9
0.0
0.0
1.5
3.0
4.5
6.0
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 69940
S-82713-Rev. C, 10-Nov-08
7.5
9.0
0.7
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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New Product
Si2305ADS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.10
r DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 4.1 A
10
TJ = 150 °C
0.08
TJ = 25 °C
1
0.06
TA = 125 °C
0.04
TA = 25 °C
0.02
0.00
0.1
0.0
0.2
0.4
0.6
0.8
1.0
0
1.2
2
4
6
8
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.7
30
0.6
ID = 250 µA
Power (W)
VGS(th) (V)
20
0.5
0.4
10
0.3
0.2
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
100
I D - Drain Current (A)
Limited by RDS(on)*
10
1 ms
1
10 ms
100 ms
1s
10 s
DC
0.1
TA = 25 °C
Single Pulse
0.01
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 69940
S-82713-Rev. C, 10-Nov-08
New Product
Si2305ADS
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
6.0
I D - Drain Current (A)
4.5
3.0
1.5
0.0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
2.0
1.00
1.5
0.75
Power (W)
Power (W)
Current Derating*
1.0
0.5
0.50
0.25
0.0
0.00
0
25
50
75
100
TC - Case Temperature (°C)
Power, Junction-to-Case
125
150
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69940
S-82713-Rev. C, 10-Nov-08
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New Product
Si2305ADS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
Notes:
0.02
PDM
t1
0.01
Single Pulse
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 175 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
0.001
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?69940.
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Document Number: 69940
S-82713-Rev. C, 10-Nov-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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