Si3441BDV Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) −20 ID (A) 0.090 @ VGS = −4.5 V −2.9 0.130 @ VGS = −2.5 V −2.45 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3441BDV-T1 Si3441BDV-T1—E3 (Lead Free) Marking Code: P-Channel MOSFET B1xxx ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS −20 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD V −2.45 −2.9 −2.35 −1.95 IDM Continuous Diode Current (Diode Conduction)a −16 −1.0 −0.72 1.25 0.86 0.8 0.55 TJ, Tstg Unit −55 to 150 A W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 5 sec Steady State Steady State RthJA RthJF Typical Maximum 80 100 120 145 70 85 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. For SPICE model information via the Worldwide Web: http://www. vishay.com/www/product/spice.htm. Document Number: 72028 S-40424—Rev. C, 15-Mar-04 www.vishay.com 1 Si3441BDV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = −250 mA −0.45 Typ Max Unit −0.85 V "100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On State Drain Currenta On-State ID(on) D( ) Drain Source On-State Drain-Source On State Resistancea Voltagea VDS = −20 V, VGS = 0 V −1 VDS = −20 V, VGS = 0 V, TJ = 70_C −5 VDS = −5 V, VGS = −4.5 V −10 VDS = −5 V, VGS = −2.5 V −4 mA A VGS = −4.5 V, ID = −3.3 A 0.070 0.090 VGS = −2.5 V, ID = −2.9 A 0.098 0.130 gfs VDS = −10 V, ID = −3.3 A 8.0 VSD IS = −1.6 A, VGS = 0 V −0.8 −1.2 5.2 8.0 rDS(on) DS( ) Forward Transconductancea Diode Forward VDS = 0 V, VGS = "8 V W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 1.5 Turn-On Delay Time td(on) 15 25 55 85 30 45 40 60 50 80 Rise Time VDS = −10 V, VGS = −4.5 V, ID = −3.3 A tr Turn-Off Delay Time VDD = −10 V, RL = 10 W ID ^ −1.0 A, VGEN = −4.5 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 0.8 IF = −1.6 A, di/dt = 100 A/ms nC ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 20 20 VGS = 4.5 thru 3.5 V TC = −55_C 3V 16 2.5 V I D − Drain Current (A) I D − Drain Current (A) 16 12 8 2V 4 1.5 V 1V 0 0 1 2 3 4 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 5 25_C 125_C 12 8 4 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS − Gate-to-Source Voltage (V) Document Number: 72028 S-40424—Rev. C, 15-Mar-04 Si3441BDV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 1000 0.24 800 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) On-Resistance vs. Drain Current 0.30 0.18 VGS = 2.5 V 0.12 VGS = 4.5 V 600 Ciss 400 0.06 200 0.00 0 Coss Crss 0 4 8 12 16 20 0 4 ID − Drain Current (A) 12 16 20 VDS − Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 5 1.5 VDS = 10 V ID = 3.3 A VGS = 4.5 V ID = 3.3 A 1.4 4 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 8 3 2 1.3 1.2 1.1 1.0 0.9 0.8 1 0.7 0 0 1 2 3 4 5 0.6 −50 6 −25 0 Qg − Total Gate Charge (nC) 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.30 20 r DS(on) − On-Resistance ( W ) I S − Source Current (A) TJ = 150_C 10 TJ = 25_C 1 0.0 0.24 ID = 3.3 A 0.18 0.12 0.06 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD − Source-to-Drain Voltage (V) Document Number: 72028 S-40424—Rev. C, 15-Mar-04 1.4 1.6 0 1 2 3 4 5 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si3441BDV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.6 10 8 ID = 250 mA 0.2 6 Power (W) V GS(th) Variance (V) 0.4 −0.0 TA = 25_C 4 −0.2 2 −0.4 −0.6 −50 −25 0 25 50 75 100 125 0 10−2 150 10−1 TJ − Temperature (_C) 100 10 100 600 Safe Operating Area rDS(on) Limited IDM Limited 10 ms 10 I D − Drain Current (A) 1 Time (sec) 100 ms 1 ms 1 10 ms 0.1 100 ms TA = 25_C Single Pulse 1s dc, 100 s, 10 s BVDSS Limited 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 120_C/W Single Pulse 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72028 S-40424—Rev. C, 15-Mar-04 Si3441BDV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 Document Number: 72028 S-40424—Rev. C, 15-Mar-04 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1