Si1021R New Product Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS(min) (V) rDS(on) () VGS(th) (V) ID (mA) –60 4 @ VGS = –10 V –1 to –3.0 –190 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Power Supply Converter Circuits D Solid-State Relays High-Side Switching Low On-Resistance: 4 Ω Low Threshold: –2 V (typ) Fast Switching Speed: 20 ns (typ) Low Input Capacitance: 20 pF (typ) Miniature Package Gate-Source ESD Protection Ease in Driving Switches Low Offset Voltage Low-Voltage Operation High-Speed Circuits Easily Driven Without Buffer Small Board Area SC-75A (SOT-416) G 1 3 S D Marking Code: F 2 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS –60 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C) _ a Pulse Drain Currentb Power Dissipationa Maximum Junction-to-Ambienta Operating Junction and Storage Temperature Range ID IDM TA = 25_C TA = 85_C V –190 TA = 25_C TA = 85_C Unit –135 mA –650 250 PD 130 mW RthJA 500 _C/W TJ, Tstg –55 to 150 _C Notes a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71410 S-21120—Rev. C, 01-Jul-02 www.vishay.com 1 Si1021R New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = –10 A –60 VGS(th) VDS = VGS, ID = –0.25 mA –1 Typ Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltagea IGSS V –3.0 VDS = 0 V, VGS = "20 V "10 VDS = 0 V, VGS = "10 V "200 VDS = 0 V, VGS = "10 V, TJ = 85_C "500 VDS = 0 V, VGS = "5 V "100 IDSS ID(on) VDS = –50 V, VGS = 0 V –25 VDS = –50 V, VGS = 0 V, TJ = 85_C –250 VDS = –10 V, VGS = –4.5 V –50 VDS = –10 V, VGS = –10 V –600 VGS = –4.5 V, ID = –25 mA 8 4 VGS = –10 V, ID = –500 mA, TJ = 125_C 6 gfs VDS = –10 V, ID = –100 mA VSD IS = –200 mA, VGS = 0 V nA mA VGS = –10 V, ID = –500 mA rDS(on) A 80 mS –1.4 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 1.7 VDS = –30 V, VGS = –15 V, ID ^ –500 mA 0.26 nC 0.46 23 VDS = –25 V, VGS = 0 V, f = 1 MHz 10 pF 5 Switchingb Turn-On Time tON Turn-Off Time tOFF VDD = –25 V, RL = 150 ID ^ –200 mA, VGEN = –10 V RG = 10 20 35 ns Notes a. Pulse test: PW v300 ms duty cycle v2%. b. Switching time is essentially independent of operating temperature. www.vishay.com 2 Document Number: 71410 S-21120—Rev. C, 01-Jul-02 Si1021R New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 1200 1.0 VGS = 10 V TJ = –55_C 7V 8V I D – Drain Current (mA) I D – Drain Current (A) 0.8 6V 0.6 0.4 5V 900 25_C 125_C 600 300 0.2 4V 0.0 0 0 1 2 3 4 5 0 2 VDS – Drain-to-Source Voltage (V) 4 6 8 10 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 40 20 16 32 C – Capacitance (pF) r DS(on) – On-Resistance ( ) VGS = 0 V VGS = 4.5 V 12 VGS = 5 V 8 VGS = 10 V 4 Ciss 24 16 Coss 8 Crss 0 0 0 200 400 600 800 0 1000 5 ID – Drain Current (mA) 15 20 25 VDS – Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 15 1.8 ID = 500 mA r DS(on) – On-Resistance ( ) (Normalized) V GS – Gate-to-Source Voltage (V) 10 12 VDS = 30 V VDS = 48 V 9 6 3 0 0.0 0.3 0.6 0.9 1.2 Qg – Total Gate Charge (nC) Document Number: 71410 S-21120—Rev. C, 01-Jul-02 1.5 1.8 1.5 VGS = 10 V @ 500 mA 1.2 VGS = 4.5 V @ 25 mA 0.9 0.6 0.3 0.0 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) www.vishay.com 3 Si1021R New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-Source Voltage 10 1000 VGS = 0 V r DS(on) – On-Resistance ( ) I S – Source Current (A) 8 100 TJ = 125_C 10 TJ = 25_C TJ = –55_C ID = 500 mA 6 4 ID = 200 mA 2 0 1 0.00 0.3 0.6 0.9 1.2 0 1.5 VSD – Source-to-Drain Voltage (V) 4 6 8 10 VGS – Gate-to-Source Voltage (V) Threshold Voltage Variance Over Temperature Single Pulse Power, Junction-to-Ambient 0.5 3 0.4 ID = 250 A 2.5 0.3 2 0.2 Power (W) V GS(th) Variance (V) 2 0.1 1.5 –0.0 1 TA = 25_C –0.1 0.5 –0.2 –0.3 –50 0 –25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600 Time (sec) TJ – Junction Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 500_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 www.vishay.com 4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71410 S-21120—Rev. C, 01-Jul-02