Si9956DY Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET VDS (V) 20 rDS(on) () ID (A) 0.10 @ VGS = 10 V 3.5 0.20 @ VGS = 4.5 V 2.0 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2 S1 S2 N-Channel MOSFET N-Channel MOSFET Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150C)a TA = 25C ID TA = 70C Pulsed Drain Current Continuous Source Current (Diode Conduction)a TA = 25C Maximum Power Dissipationa V 3.5 2.8 IDM 14 IS 1.7 A 2.0 PD TA = 70C Operating Junction and Storage Temperature Range Unit W 1.3 TJ, Tstg –55 to 150 C Symbol Limit Unit RthJA 62.5 C/W Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70140 S-00652—Rev. L, 27-Mar-00 www.vishay.com FaxBack 408-970-5600 1 Si9956DY Vishay Siliconix Parameter Typa Symbol Test Condition Min Max VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 16 V, VGS = 0 V 2 VDS = 16 V, VGS = 0 V, TJ = 55C 25 Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) Drain-Source On-State Resistanceb rDS(on) Forward Transconductanceb Diode Forward Voltageb VDS w 5 V, VGS = 10 V V 14 nA mA A VGS = 10 V, ID = 2.2 A 0.082 0.10 VGS = 4.5 V, ID = 1 A 0.12 0.20 gfs VDS = 15 V, ID = 3.5 A 6.5 VSD IS = 1.7 A, VGS = 0 V 0.75 1.2 7 30 VDS = 10 V, V VGS = 10 V V, ID = 1 1.8 8A 1.2 W S V Dynamica Total Gate Charge Qg Gate-Source Charge Qgs nC C Gate-Drain Charge Qgd Turn-On Delay Time td(on) 8 20 tr 12 20 21 90 8 50 50 100 Rise Time Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 2.1 VDD = 10 V V,, RL = 10 W ID ^ 1 A, A VGEN = 10 V V, RG = 6 W IF = 1.7 A, di/dt = 100 A/ms ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com FaxBack 408-970-5600 2 Document Number: 70140 S-00652—Rev. L, 27-Mar-00 Si9956DY Vishay Siliconix Output Characteristics Transfer Characteristics 15 15 VGS = 10 – 5 V TC = –55C 12 I D – Drain Current (A) I D – Drain Current (A) 12 4V 9 6 3 25C 125C 9 6 3 3V 0 0 0 2 4 6 8 10 0 1 VDS – Drain-to-Source Voltage (V) 2 4 5 6 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 700 0.20 VGS = 4.5 V 600 0.16 C – Capacitance (pF) r DS(on) – On-Resistance ( Ω ) 3 0.12 VGS = 10 V 0.08 500 400 Ciss 300 200 Coss 0.04 100 Crss 0 0 0 3 6 9 12 0 15 5 Gate Charge 2.0 VDS = 10 V ID = 1.8 A 8 r DS(on) – On-Resistance ( Ω ) (Normalized) V GS – Gate-to-Source Voltage (V) 10 6 4 2 0 0 2 4 6 Qg – Total Gate Charge (nC) Document Number: 70140 S-00652—Rev. L, 27-Mar-00 10 15 20 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) 8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 2.2 A 1.2 0.8 0.4 0 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (C) www.vishay.com FaxBack 408-970-5600 3 Si9956DY Vishay Siliconix Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 20 0.6 r DS(on) – On-Resistance ( Ω ) 0.5 I S – Source Current (A) 10 TJ = 150C TJ = 25C 0.4 ID = 3.5 A 0.3 0.2 0.1 0 1 0.2 0.4 0.6 1.0 0.8 1.2 0 1.4 VSD – Source-to-Drain Voltage (V) 2 4 6 8 10 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 0.4 30 0.2 25 20 Power (W) V GS(th) Variance (V) ID = 250 µA –0.0 –0.2 15 –0.4 10 –0.6 5 –0.8 –50 0 –25 0 25 50 75 100 125 150 0.010 0.100 TJ – Temperature (C) 1.0 10 30 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5C/W 0.02 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 10–3 10–2 10–1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 4 Document Number: 70140 S-00652—Rev. L, 27-Mar-00 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1