SKiM459GD12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Ts = 25 °C 554 A Ts = 70 °C 450 A 450 A ICnom ICRM ICRM = 3xICnom 1350 A -20 ... 20 V 10 µs -40 ... 175 °C Ts = 25 °C 438 A Ts = 70 °C 347 A 450 A VGES SKiM® 93 tpsc Trench IGBT Modules VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 150 °C Tj Inverse diode IF SKiM459GD12E4 Tj = 175 °C IFnom Features • IGBT 4 Trench Gate Technology • Solderless sinter technology • VCE(sat) with positive temperature coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology forthermal contacts and electricalcontacts • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor IFRM IFRM = 3xIFnom 1350 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 2430 A -40 ... 175 °C Tj Module It(RMS) Tstg Visol A °C 2500 V Characteristics Symbol Conditions min. typ. max. Unit Tj = 25 °C 1.85 2.10 V Tj = 150 °C 2.25 2.45 V VCE0 Tj = 25 °C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V rCE Tj = 25 °C 2.3 2.7 mΩ IGBT VCE(sat) Typical Applications • Automotive inverter • High reliability AC inverter wind • High reliability AC inverter drives AC sinus 50 Hz, t = 1 min 700 -40 ... 125 IC = 450 A VGE = 15 V chiplevel VGE = 15 V Tj = 150 °C 3.4 3.7 mΩ 5.8 6.5 V Tj = 25 °C 0.1 0.3 mA f = 1 MHz 26.4 nF f = 1 MHz 1.74 nF VGE(th) VGE=VCE, IC = 18 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V QG VGE = - 8 V...+ 15 V RGint Tj = 25 °C td(on) tr Eon td(off) tf Eoff Rth(j-s) VCC = 600 V IC = 450 A RG on = 1.3 Ω RG off = 1.3 Ω di/dton = 8340 A/µs di/dtoff = 3660 A/µs 5 mA f = 1 MHz 1.41 nF 2550 nC 1.7 Ω Tj = 150 °C 276 ns Tj = 150 °C 55 ns Tj = 150 °C 22 mJ Tj = 150 °C 538 ns Tj = 150 °C 114 ns Tj = 150 °C 57 per IGBT mJ 0.092 K/W GD © by SEMIKRON Rev. 2 – 26.08.2009 1 SKiM459GD12E4 Characteristics Symbol SKiM® 93 rF IRRM Qrr Trench IGBT Modules Err Rth(j-s) SKiM459GD12E4 • IGBT 4 Trench Gate Technology • Solderless sinter technology • VCE(sat) with positive temperature coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology forthermal contacts and electricalcontacts • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor min. typ. max. Unit Tj = 25 °C 2.1 2.5 V Tj = 150 °C 2.1 2.4 V Tj = 25 °C 1.3 1.5 V Tj = 150 °C 0.9 1.1 V Tj = 25 °C 1.9 2.1 mΩ 2.6 2.8 mΩ Tj = 150 °C IF = 450 A Tj = 150 °C di/dtoff = 8880 A/µs T = 150 °C j VGE = -15 V T j = 150 °C VCC = 600 V per diode 570 A 80 µC 40 mJ 0.155 K/W Module LCE RCC'+EE' Features Conditions Inverse diode VF = VEC IF = 450 A VGE = 0 V chip VF0 Ms 10 terminal-chip nH 0.3 mΩ Ts = 125 °C 0.5 mΩ to heat sink (M4) to terminals (M6) Mt 15 Ts = 25 °C 2.5 4 Nm 3 5 Nm Nm w 1100 g Temperature sensor R100 TSensor = 100 °C (R25 = 5 kΩ) 339 Ω B100/125 R(T) = R100exp[B100/125(1/T-1/373)]; T[K]; 4096 K Typical Applications • Automotive inverter • High reliability AC inverter wind • High reliability AC inverter drives GD 2 Rev. 2 – 26.08.2009 © by SEMIKRON SKiM459GD12E4 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 2 – 26.08.2009 3 SKiM459GD12E4 Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 2 – 26.08.2009 © by SEMIKRON SKiM459GD12E4 SKIM® 93 GD This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. © by SEMIKRON Rev. 2 – 26.08.2009 5