VISHAY SMA5J28A

SMA5J5.0 thru SMA5J40CA
Vishay General Semiconductor
High Power Density Surface Mount TRANSZORB®
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
DO-214AC (SMA)
PRIMARY CHARACTERISTICS
VWM
5.0 V to 40 V
PPPM
500 W
IFSM (uni-directional only)
40 A
TJ max.
150 °C
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use C or CA suffix
(e.g. SMA5J40CA).
Electrical characteristics apply in both directions.
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 µs waveform (1)(2) (Fig. 1)
Peak pulse current with a 10/1000 µs waveform
(1)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
Operating junction and storage temperature range
SYMBOL
VALUE
UNIT
PPPM
500
W
IPPM
See next table
A
IFSM
40
A
TJ, TSTG
- 55 to + 150
°C
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2.
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
Document Number: 88875
Revision: 22-Oct-08
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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1
SMA5J5.0 thru SMA5J40CA
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE TYPE
SMA5J5.0
SMA5J5.0A
(5)
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
VBR (V) (1)
UNI
BI
MIN.
MAX.
5AD
5AD
6.40
7.82
TEST
CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM
(V)
10
5.0
MAXIMUM
REVERSE
LEAKAGE
AT VWM
MAXIMUM
PEAK
PULSE
CURRENT
ID (µA) (3)
IPPM (A) (2)
MAXIMUM
CLAMPING
VOLTAGE AT
IPPM
VC (V)
800
52.1
9.6
5AE
5AE
6.40
7.07
10
5.0
800
54.3
9.2
SMA5J6.0
5AF
5AF
6.67
8.15
10
6.0
800
43.9
11.4
SMA5J6.0A
5AG
5AG
6.67
7.37
10
6.0
800
48.5
10.3
SMA5J6.5
5AH
5AH
7.22
8.82
10
6.5
500
40.7
12.3
SMA5J6.5A
5AK
5AK
7.22
7.98
10
6.5
500
44.6
11.2
SMA5J7.0
5AL
5AL
7.78
9.51
10
7.0
200
37.6
13.3
SMA5J7.0A
5AM
5AM
7.78
8.6
10
7.0
200
41.7
12.0
SMA5J7.5
5AN
5AN
8.33
10.2
1.0
7.5
100
35.0
14.3
SMA5J7.5A
5AP
5AP
8.33
9.21
1.0
7.5
100
38.8
12.9
SMA5J8.0
5AQ
5AQ
8.89
10.9
1.0
8.0
50
33.3
15.0
SMA5J8.0A
5AR
5AR
8.89
9.83
1.0
8.0
50
36.8
13.6
SMA5J8.5
5AS
5AS
9.44
11.5
1.0
8.5
10
31.4
15.9
SMA5J8.5A
5AT
5AT
9.44
10.4
1.0
8.5
10
34.7
14.4
SMA5J9.0
5AU
5AU
10.0
12.2
1.0
9.0
5.0
29.6
16.9
SMA5J9.0A
5AV
5AV
10.0
11.1
1.0
9.0
5.0
32.5
15.4
SMA5J10
5AW
5AW
11.1
13.6
1.0
10
1.0
26.6
18.8
SMA5J10A
5AX
5AX
11.1
12.3
1.0
10
1.0
29.4
17.0
SMA5J11
5AY
5AY
12.2
14.9
1.0
11
1.0
24.9
20.1
SMA5J11A
5AZ
5AZ
12.2
13.5
1.0
11
1.0
27.5
18.2
SMA5J12
5BD
5BD
13.3
16.3
1.0
12
1.0
22.7
22.0
SMA5J12A
5BE
5BE
13.3
14.7
1.0
12
1.0
25.1
19.9
SMA5J13
5BF
5BF
14.4
17.6
1.0
13
1.0
21.0
23.8
SMA5J13A
5BG
5BG
14.4
15.9
1.0
13
1.0
23.3
21.5
SMA5J14
5BH
5BH
15.6
19.1
1.0
14
1.0
19.4
25.8
SMA5J14A
5BK
5BK
15.6
17.2
1.0
14
1.0
21.6
23.2
SMA5J15
5BL
5BL
16.7
20.4
1.0
15
1.0
18.6
26.9
SMA5J15A
5BM
5BM
16.7
18.5
1.0
15
1.0
20.5
24.4
SMA5J16
6BN
5BN
17.8
21.8
1.0
16
1.0
17.4
28.8
SMA5J16A
5BP
5BP
17.8
19.7
1.0
16
1.0
19.2
26.0
SMA5J17
5BQ
5BQ
18.9
23.1
1.0
17
1.0
16.4
30.5
SMA5J17A
5BR
5BR
18.9
20.9
1.0
17
1.0
18.1
27.6
SMA5J18
5BS
5BS
20.0
24.4
1.0
18
1.0
15.5
32.2
SMA5J18A
5BT
5BT
20.0
22.1
1.0
18
1.0
17.1
29.2
SMA5J20
5BU
5BU
22.2
27.1
1.0
20
1.0
14.0
35.8
SMA5J20A
5BV
5BV
22.2
24.5
1.0
20
1.0
15.4
32.4
SMA5J22
5BW
5BW
24.4
29.8
1.0
22
1.0
12.7
39.4
SMA5J22A
5BX
5BX
24.4
26.9
1.0
22
1.0
14.1
35.5
SMA5J24
5BY
5BY
26.7
32.6
1.0
24
1.0
11.6
43.0
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88875
Revision: 22-Oct-08
SMA5J5.0 thru SMA5J40CA
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE
MARKING
CODE
DEVICE TYPE
UNI
BREAKDOWN
VOLTAGE
VBR (V) (1)
BI
MIN.
MAX.
TEST
CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
MAXIMUM
PEAK
PULSE
CURRENT
ID (µA) (3)
IPPM (A) (2)
MAXIMUM
CLAMPING
VOLTAGE AT
IPPM
VC (V)
SMA5J24A
5BZ
5BZ
26.7
29.5
1.0
24
1.0
12.9
38.9
SMA5J26
5CD
5CD
28.9
35.3
1.0
26
1.0
10.7
46.6
SMA5J26A
5CE
5CE
28.9
31.9
1.0
26
1.0
11.9
42.1
SMA5J28
5CF
5CF
31.1
38.0
1.0
28
1.0
10.0
50.0
SMA5J28A
5CG
5CG
31.1
34.4
1.0
28
1.0
11.0
45.4
SMA5J30
5CH
5CH
33.3
40.7
1.0
30
1.0
9.3
53.5
SMA5J30A
5CK
5CK
33.3
36.8
1.0
30
1.0
10.3
48.4
SMA5J33
5CL
5CL
36.7
44.9
1.0
33
1.0
8.5
59.0
SMA5J33A
5CM
5CM
36.7
40.6
1.0
33
1.0
9.4
53.3
SMA5J36
5CN
5CN
40.0
48.9
1.0
36
1.0
7.8
64.3
SMA5J36A
5CP
5CP
40.0
44.2
1.0
36
1.0
8.6
58.1
SMA5J40
5CQ
5CQ
44.4
54.3
1.0
40
1.0
7.0
71.4
SMA5J40A
5CR
5CR
44.4
49.1
1.0
40
1.0
7.8
64.5
Notes:
(1) Pulse test: tp ≤ 50 ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types having VWM of 10 V and less, the ID limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
(5) For the bi-directional SMA5J5.0CA, the maximum VBR is 7.25 V
(6) VF = 3.5 V at IF = 25 A (uni-directional only)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Thermal resistance, junction to ambient (1)
RθJA
80
°C/W
Thermal resistance, junction to leads
RθJL
25
°C/W
Note:
(1) Mounted on minimum recommended pad layout
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SMA5J5.0A-E3/61
0.064
61
1800
7" diameter plastic tape and reel
SMA5J5.0A-E3/5A
0.064
5A
7500
13" diameter plastic tape and reel
SMA5J5.0AHE3/61 (1)
0.064
61
1800
7" diameter plastic tape and reel
SMA5J5.0AHE3/5A (1)
0.064
5A
7500
13" diameter plastic tape and reel
Note:
(1) Automotive grade AEC Q101 qualified
Document Number: 88875
Revision: 22-Oct-08
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
SMA5J5.0 thru SMA5J40CA
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
10 000
Non-Repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
10
1
1.0 µs
10 µs
100 µs
1.0 ms
TJ = 25 °C
f = 1.0 MHz
Uni-Directional
Bi-Directional
Measured at
Zero Bias
1000
100
Measured at Stand-Off
Voltage VWM
10
10 ms
1
10
100
td - Pulse Width (s)
VWM - Reverse Stand-Off Voltage (V)
Figure 1. Peak Pulse Power Rating Curve
Figure 4. Typical Junction Capacitance
200
100
100
Transient Thermal Impedance (°C/W)
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage, %
0.1
0.1 µs
CJ - Junction Capacitance (pF)
PPPM - Peak Pulse Power (kW)
100
75
50
25
1
0.01
0
0
25
50
75
100
125
150
175
10
200
0.1
1
10
100
1000
TJ - Initial Temperature (°C)
tp - Pulse Duration (s)
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
Figure 5. Typical Transient Thermal Impedance
Peak Value
IPPM
100
200
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
tr = 10 µs
Peak Forward Surge Current (A)
IPPM - Peak Pulse Current, % IRSM
150
Half Value - IPP
IPPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
TJ = TJ max.
8.3 ms Single Half Sine-Wave
100
50
td
0
0
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4
1.0
2.0
3.0
4.0
10
1
5
10
50
100
t - Time (ms)
Number of Cycles at 60 Hz
Figure 3. Pulse Waveform
Figure 6. Maximum Non-Repetitive Forward Surge Current
Uni-Directional Only
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88875
Revision: 22-Oct-08
SMA5J5.0 thru SMA5J40CA
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Document Number: 88875
Revision: 22-Oct-08
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
5
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Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
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document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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