Si4348DY Vishay Siliconix New Product N-Channel 30-V (D-S) MOSFET FEATURES D TrenchFETr Gen II Power MOSFET APPLICATIONS PRODUCT SUMMARY VDS (V) 30 D High-Side DC/DC Conversion − Notebook − Desktop − Server D Notebook Logic DC/DC, Low-Side ID (A) rDS(on) (W) 0.0125 @ VGS = 10 V 11 0.014 @ VGS = 4.5 V 10 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View Ordering Information: Si4348DY—E3 (Lead Free) Si4348DY-T1—E3 (Lead Free with Tape and Reel) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "12 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD V 11 8.0 8.9 6.5 IDM 40 2.2 1.20 2.5 1.31 1.6 0.84 TJ, Tstg Unit −55 to 150 A W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJF Typical Maximum 43 50 74 95 19 25 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72790 S-40438—Rev. A, 15-Mar-04 www.vishay.com 1 Si4348DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 0.8 IGSS Typ Max Unit 2.0 V VDS = 0 V, VGS = "12 V "100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55_C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea 30 VDS w 5 V, VGS = 10 V rDS(on) mA A VGS = 10 V, ID = 11 A 0.0105 0.0125 VGS = 4.5 V, ID = 10 A 0.0115 0.014 gfs VDS = 15 V, ID = 11 A 40 VSD IS = 2.2 A, VGS = 0 V 0.75 1.1 15 23 W S V Dynamicb Total Gate Charge Qg VDS = 15 V, VGS = 4.5 V, ID = 11 A nC Gate-Source Charge Qgs Gate-Drain Charge Qgd 4.3 Gate Resistance Rg 0.5 td(on) 10 15 tr 11 17 55 85 9 15 22 35 Turn-On Delay Time Rise Time Turn-Off Delay Time VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 5 IF = 2.2 A, di/dt = 100 A/ms W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 50 50 VGS = 10 thru 4 V 40 3V I D − Drain Current (A) I D − Drain Current (A) 40 30 20 10 30 20 TC = 125_C 10 25_C 0 0 1 2 3 4 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 5 0 0.0 −55_C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS − Gate-to-Source Voltage (V) Document Number: 72790 S-40438—Rev. A, 15-Mar-04 Si4348DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 2600 0.016 2080 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) On-Resistance vs. Drain Current 0.020 VGS = 4.5 V 0.012 VGS = 10 V 0.008 1560 1040 0.004 520 0.000 0 0 10 20 30 40 Ciss 50 Coss Crss 0 5 10 ID − Drain Current (A) Gate Charge 25 30 On-Resistance vs. Junction Temperature 1.6 VDS = 15 V ID = 11 A 5 VGS = 10 V ID = 11 A 1.4 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 20 VDS − Drain-to-Source Voltage (V) 6 4 3 2 1.2 1.0 0.8 1 0 0 4 8 12 16 0.6 −50 20 −25 0 Qg − Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.05 r DS(on) − On-Resistance ( W ) TJ = 150_C 10 TJ = 25_C 1 0.1 0.0 25 TJ − Junction Temperature (_C) 50 I S − Source Current (A) 15 0.04 ID = 11 A 0.03 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) Document Number: 72790 S-40438—Rev. A, 15-Mar-04 1.2 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si4348DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power, Junction-to-Ambient 30 0.4 0.2 24 −0.0 Power (W) V GS(th) Variance (V) ID = 250 mA −0.2 18 12 −0.4 6 −0.6 −0.8 −50 −25 0 25 50 75 100 125 0 10−2 150 10−1 1 10 100 1000 Time (sec) TJ − Temperature (_C) 100 Safe Operating Area IDM Limited rDS(on) Limited I D − Drain Current (A) 10 1 ms 1 ID(on) Limited 10 ms 100 ms 0.1 1s 10 s TA = 25_C Single Pulse dc BVDSS Limited 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 71_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72790 S-40438—Rev. A, 15-Mar-04 Si4348DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 Document Number: 72790 S-40438—Rev. A, 15-Mar-04 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5