SMG1332E
600mA, 20V,RDS(ON)600mΩ
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
SC-59
A
Description
L
The SMG1332E provide the designer with best
combination of fast swirching, low on-resistance
and cost-effectiveness.
S
2
3
Top View
B
1
D
G
Features
J
C
* Simple Gate Drive
* 2KV ESD Rating (Per MIL-STD-883D)
K
H
* Small Package Outline
Drain
Gate
Dim
Min
Max
A
2.70
3.10
B
1.40
1.60
C
1.00
1.30
D
0.35
0.50
G
1.70
2.10
H
0.00
0.10
J
0.10
0.26
K
0.20
0.60
L
0.85
1.15
S
2.40
2.80
All Dimension in mm
Source
D
G
S
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
3
Pulsed Drain Current
600
mA
o
ID@TA=70 C
470
mA
IDM
2.5
A
1.0
W
0.008
W / oC
PD@TA=25 C
Linear Derating Factor
Tj, Tstg
Operating Junction and Storage Temperature Range
V
V
o
Total Power Dissipation
20
±5
ID@TA=25 C
1,2
Unit
o
VGS
3
Ratings
o
C
-55~+150
Thermal Data
Parameter
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/
01-Jan-2006 Rev. B
Symbol
3
Max.
Rthj-a
Ratings
125
Unit
o
C /W
Any changing of specification will not be informed individual
Page 1 of 4
SMG1332E
600mA, 20V,RDS(ON)600mΩ
Elektronische Bauelemente
o
Electrical Characteristics( Tj=25 C
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
N-Channel Enhancement Mode Power Mos.FET
Unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
BVDSS
20
_
_
V
BVDS/ Tj
_
0.02
_
V/ C
VGS(th)
0.5
_
1.2
V
VDS=VGS, ID=250uA
IGSS
_
_
±10
uA
VGS=±5V
_
_
1
uA
VDS=20V,VGS=0
_
_
10
uA
VDS=16V,VGS=0
_
_
600
o
Drain-Source Leakage Current (Tj=25 C)
Drain-Source Leakage Current (Tj=70 oC)
Static Drain-Source On-Resistance
IDSS
RDS(ON)
_
Total Gate Charge 2
Qg
_
Gate-Source Charge
Qgs
_
Gate-Drain ("Miller") Charge
Qgd
_
Turn-on Delay Time 2
Td(ON)
Rise Time
Tr
Turn-off Delay Time
Fall Time
_
_
1200
1.3
2
_
0.5
_
4
_
10
_
_
15
Tf
_
2
_
_
38
60
Ciss
IOutput Capacitance
Coss
Reverse Transfer Capacitance
Crss
Forward Transconductance
Gfs
_
_
_
17
12
1
o
Reference to 25 C, ID=1mA
VGS=4.5V, ID=600mA
VGS=2.5V, ID=400mA
nC
ID=600mA
VDS=16V
VGS=4.5V
VDD=10V
_
Td(Off)
nput Capacitance
VGS=0V, ID=250uA
Ω
_
0.3
o
Test Condition
ID=600mA
nS
VGS=10V
RG=3.3 Ω
RD=16.7Ω
_
pF
f=1.0MHz
_
_
VGS=0V
VDS=10V
S
VDS=5V, ID=600mA
Source-Drain Diode
Parameter
Forward On Voltage
2
Symbol
VDS
Min.
Typ.
_
_
Max.
Unit
1.2
V
Test Condition
IS=300mA, VGS=0V.
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
3.Surface mounted on FR4 board, t≦10sec.
http://www.SeCoSGmbH.com/
01-Jan-2006 Rev. B
Any changing of specification will not be informed individual
Page 2 of 4
SMG1332E
Elektronische Bauelemente
600mA, 20V,RDS(ON)600mΩ
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
01-Jan-2006 Rev. B
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page 3 of 4
SMG1332E
Elektronische Bauelemente
600mA, 20V,RDS(ON)600mΩ
N-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
http://www.SeCoSGmbH.com/
01-Jan-2006 Rev. B
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4