SQ7415EN Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® Power MOSFET - 60 RDS(on) (Ω) at VGS = 10 V 0.065 ID (A) - 5.7 Configuration 3.30 mm 1 RoHS* COMPLIANT • Passed all AEC-Q101 Reliability Testing S S 3.30 mm Available AEC-Q101 RELIABILITY Single PowerPAK 1212-8 Pb-free • Package with Low Thermal Resistance S 2 G S 3 G 4 D 8 D 7 D D 6 D 5 P-Channel MOSFET Bottom View ORDERING INFORMATION Package PowerPAK 1212-8 Lead (Pb)-free SQ7415EN-T1-E3 SnPb SQ7415EN-T1 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS - 60 Gate-Source Voltage VGS ± 20 Continuous Drain Currenta TC = 25 °C TC = 70 °C Continuous Source Current (Diode Conduction)a ID UNIT V - 3.6a - 2.9a A IS - 1.3a Pulsed Drain Currentb IDM - 30 Single Pulse Avalanche Energy EAS - mJ - A Single Pulse Avalanche Current Maximum Power Dissipationb L = 0.1 mH TC = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range IAS PD 1.5 0.8 W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc RthJA 81 RthJC 2.4 °C/W Notes a. Package limited. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR-4 material). Document Number: 74488 S-81558-Rev. B, 01-Jul-08 www.vishay.com 1 SQ7415EN Vishay Siliconix SPECIFICATIONS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0 V, ID = - 250 µA - - - VGS(th) VDS = VGS, ID = - 250 µA - 1.5 - - 3.0 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 Zero Gate Voltage Drain Current IDSS UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea ID(on) RDS(on) VGS = 0 V VDS = - 60 V - - - 1.0 VGS = 0 V VDS = - 60 V, TJ = 125 °C - - - 5.0 VGS = 0 V VDS = - 60 V, TJ = 175 °C - - - VGS = - 10 V VDS ≤ - 5 V - 20 - - VGS = - 10 V ID = - 5.7 A - 0.054 0.065 VGS = - 10 V ID = 30 A, TJ = 125 °C - - - VGS = - 10 V ID = 30 A, TJ = 175 °C - - - 11 - - - - - gfs VDS = - 15 V, ID = - 5.7 A V nA µA A Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss - - - Reverse Transfer Capacitance Crss - - - Total Gate Chargec Qg - 15 25 Gate-Source Chargec - 4 - Qgd - 3.2 - Turn-On Delay Time c td(on) - 12 20 tr - 12 20 - 22 35 - 16 25 - - - Turn-Off Delay Timec Fall Timec VGS = - 10 V VDS = 25 V, f = 1 MHz Gate-Drain Chargec Rise Timec Qgs VGS = 0 V td(off) VDS = - 30 V, ID = - 5.7 A VDD = - 30 V, RL = 30 Ω ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω tf pF nC ns Source-Drain Diode Ratings and Characteristics TC = 25 °Cb Pulsed Currenta ISM Forward Voltage VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 85 A, VGS = 0 V trr IRM(REC) Qrr IF = - 3.2 A, dI/dt = 100 A/µs A - - - V - 45 90 ns - - - A - - - µC Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74488 S-81558-Rev. B, 01-Jul-08 SQ7415EN Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 20 20 VGS = 10 thru 5 V 16 I D - Drain Current (A) I D - Drain Current (A) 16 12 4V 8 4 12 8 TC = 125 °C 4 25 °C 3V 0 - 55 °C 0 0 1 2 3 4 5 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 300 5 0.20 R DS(on) - On-Resistance (Ω) g fs - Transconductance (S) 250 200 Graph to be available upon completion of testing 150 100 50 0 0.12 VGS = 4.5 V 0.08 VGS = 10 V 0.04 0.00 0 20 40 60 80 100 120 0 4 8 12 16 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 1200 20 10 1000 Ciss VGS - Gate-to-Source Voltage (V) C - Capacitance (pF) 0.16 800 600 400 Coss 200 Crss 0 VDS = 30 V ID = 5.7 A 8 6 4 2 0 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 74488 S-81558-Rev. B, 01-Jul-08 50 60 0 4 8 12 16 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 SQ7415EN Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1.8 20 10 I S - Source Current (A) R DS(on) - On-Resistance (Normalized) TJ = 150 °C VGS = 10 V ID = 5.7 A 1.6 1.4 1.2 1.0 TJ = 25 °C 0.8 0.6 - 50 - 25 0 25 50 75 100 125 1 0.0 150 0.2 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 0.6 0.8 1.0 1.2 Source Drain Diode Forward Voltage 56 0.20 0.16 ID = 5.7 A 52 0.12 VDS (V) R DS(on) - On-Resistance (Ω) 0.4 VSD - Source-to-Drain Voltage (V) 0.08 48 Graph to be available upon completion of testing 44 0.04 0.00 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 4 10 40 - 50 - 25 0 25 50 75 100 125 150 175 T J - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Document Number: 74488 S-81558-Rev. B, 01-Jul-08 SQ7415EN Vishay Siliconix THERMAL RATINGS TA = 25 °C, unless otherwise noted 1000 120 100 80 Graph to be available upon completion of testing 60 I Dav (A) I D - Drain Current (A) 100 10 Graph to be available upon completion of testing 40 1 20 0 0.1 0 25 50 75 100 125 150 175 0.00001 0.0001 0.1 1 TAV (s) Maximum Drain Current vs. Ambient Temperature Avalanche Current vs. Time 0.8 50 ID = 250 µA 0.6 V GS(th) Variance (V) 40 Power (W) 0.01 0.001 TC - Ambient Temperature (°C) 30 20 10 0.4 0.2 0.0 - 0.2 0 0.01 0.1 1 10 100 600 - 0.4 - 50 - 25 0 25 50 75 Time (s) TJ - Temperature (°C) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 125 150 1000 I D - Drain Current (A) 100 10 Graph to be available upon completion of testing 1 0.1 0.1 * VGS 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area Document Number: 74488 S-81558-Rev. B, 01-Jul-08 www.vishay.com 5 SQ7415EN Vishay Siliconix THERMAL RATINGS TA = 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 65 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10- 4 4. Surface Mounted 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10- 4 10- 3 10- 2 Square Wave Pulse Duration (s) 10- 1 1 Normalized Thermal Transient Impedance, Junction-to-Ambient 1000 IAS(PEAK) (A) 100 Graph to be available upon completion of testing 10 1 0.1 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 tav (s) Single Pulse Avalanche Current (Peak) vs. Time in Avalanche www.vishay.com 6 Document Number: 74488 S-81558-Rev. B, 01-Jul-08 SQ7415EN Vishay Siliconix THERMAL RATINGS TA = 25 °C, unless otherwise noted 100000 1000 Graph to be available upon completion of testing E(av)(peak) (mJ) IAS(peak) (A) 100 10 1 0.1 1 10 10000 Graph to be available upon completion of testing 1000 100 25 100 50 75 100 125 150 TJ(start) (°C) Inductance (mH) Single Pulse Avalanche Energy (Peak) vs. TJ(start) Single Pulse Avalanche Current (Peak) vs. Inductance 10 1 IAR(peak) (A) Graph to be available upon completion of testing 0.1 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 tav (s) Repetitive Avalanche Current (Peak) vs. Time in Avalanche at TA = 25 °C Document Number: 74488 S-81558-Rev. B, 01-Jul-08 www.vishay.com 7 SQ7415EN Vishay Siliconix THERMAL RATINGS TA = 25 °C, unless otherwise noted 10 1 IAR(peak) (A) Graph to be available upon completion of testing 0.1 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 tav (s) Repetitive Avalanche Current (Peak) vs. Time in Avalanche at TA = 150 °C Note The characteristics shown in the six graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Single Pulse Avalanche Current (Peak) vs. Time in Avalanche - Single Pulse Avalanche Current (Peak) vs. Inductance - Single Pulse Avalanche Energy (Peak) vs. TJ (start) - Repetitive Avalanche Current (Peak) vs. Time in Avalanche at TA = 25 °C - Repetitive Avalanche Current (Peak) vs. Time in Avalanche at TA = 150 °C are given for general guidelines only to enable the user to get a "ball park" indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74488. www.vishay.com 8 Document Number: 74488 S-81558-Rev. B, 01-Jul-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1