SSG200EF60E Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 200 AMP N-CHANNEL IGBT WITH ANTI-PARALLEL DIODE DESIGNER’S DATA SHEET Part Number/Ordering Information 1/ SSG200EF60E ___ └ Screening 600 VOLTS 2/ __ = Not Screened TX = TX Level TXV = TXV S = S Level Features: • • • • • • • Outstanding current capability Low on-state conductive losses Very simple gate drive design Improved SOA characterization Low input capacitance High reverse voltage rating available TX, TXV, S-Level screening available MAXIMUM RATINGS3/ SYMBOL VALUE UNIT Collector – Emitter Breakdown Voltage VCES 600 V Gate – Emitter Voltage VGES ±20 V IC1 IC2 200 100 A ICM 300 A ILM 100 A EARV 5.6 mJ T OP & TSTG -55 to +150 ºC Maximum Thermal Resistance (Junction to Case) R0JC 0.20 ºC/W Total Device Dissipation @ TC = 25ºC Dissipation Derating From @ TC = 25ºC to TC = 150ºC PD1 PD2 625 5 W W/ºC @ TC = 25ºC @ TC = 90ºC Max. Continuous Collector Current Pulsed Collector Current4/ Clamped Inductive Load Current (TJ = 125ºC)5/ Reverse Voltage Avalanche Energy (IC = 100A) 4/ Operating & Storage Temperature Milpack 3 NOTES: *Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. 1/ For ordering information, price, operating curves, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. o 3/ Unless otherwise specified, all electrical characteristics @25 C. 4/ Pulse duration limited by TJmax; repetitive rating. 5/ VCC=80% rated BVCES, VGE=15V, L=30uH, RG=10Ω. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: G00003B DOC SSG200EF60E Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 3/ ELECTRICAL CHARACTERISTICS SYMBOL MIN TYP MAX UNIT BVCES 600 –– –– V VGE(th) 2.5 5.5 6 V VCE(sat) –– –– 1.65 1.8 2.0 2.4 V Gate - Emitter Leakage Current (VGE = ±20V, VCE = 0V) IGES –– 0.01 1.0 μA Collector Leakage Current o (VCE = 480 V, VGE = 0V, Tj = 25 C) o (VCE = 600 V, VGE = 0V, Tj = 25 C) o (VCE = 480 V, VGE = 0V, Tj = 125 C) ICES1 ICES2 ICES3 –– –– –– 10 40 4 –– 200 10 μA μA mA gfs 40 –– –– S VGE = 15V IC = 10A VCE = 300V Qg(on) Qge Qgc –– –– –– 575 70 320 650 150 370 Capacitance Input Capacitance Output Capacitance Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1 MHz Cies Coes Cres –– –– –– 8400 15,000 1400 2,000 600 1,000 Inductive Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VGE = 15V IC = 45A RG = 10Ω L = 100µH td(on) tr td(off) tf –– –– –– –– 150 140 600 300 500 175 1000 500 Peak Current Ipk –– –– 200 A Peak Inverse Voltage PIV –– –– 600 V Collector - Emitter Breakdown Voltage (ICES = 250μA, VGE = 0V) Gate - Emitter Threshold Voltage (IC = 5mA, VCE = VGE) o IC = 100A @ 25 C o IC = 100A @ 100 C Collector - Emitter Saturation Voltage Forward Transconductance (IC = IC2, VCE = 10V) Gate Charge Total Gate Charge Gate-Emitter Charge Gate-Collector Charge nC pF nsec ANTI-PARALLEL DIODE Average Current Iavg –– –– 100 A Diode Forward Voltage @ IF=100A, TJ=25 C VF –– 1.1 1.5 V Reverse Recovery Time (If=40A, di/dt=200A/µsec) trr –– 200 400 nsec o PACKAGE OUTLINE: MILPACK3 PIN OUT: PIN 1: COLLECTOR PIN 2: EMITTER PIN 3: GATE PIN 4: EMITTER NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: G00003B DOC