S T M6610 S amHop Microelectronics C orp. Dec. 11 2006 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y S uper high dense cell design for low R DS (ON ). V DS S 30V ID R DS (ON) ( m Ω ) Max R ugged and reliable. 19 @ V G S = 10V 8.5A S urface Mount P ackage. E S D P rotected. 28 @ V G S = 4.5V D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S 2 S O-8 1 4 G2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) S ymbol N-Channel Unit Drain-S ource Voltage V DS 30 V G ate-S ource Voltage VGS 20 V 8.5 A 6.5 A I DM 40 A IS 1.7 A P arameter 25 C a Drain C urrent-C ontinuous @ T a ID 70 C -P ulsed b Drain-S ource Diode F orward C urrent a Maximum P ower Dissipation a T a= 25 C 2 W PD T a=70 C Operating J unction and S torage Temperature R ange 1.44 TJ, TS TG -55 to 150 C R JA 62.5 C /W THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a 1 S T M6610 E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter 5 Min Typ C Max Unit S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 24V, V GS = 0V 1 uA Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 10 uA Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA 1.8 3 V Drain-S ource On-S tate R esistance R DS (ON) V GS =10V, ID =8A 15 19 m ohm V GS =4.5V, ID =5A 20 28 m ohm OFF CHAR ACTE R IS TICS 30 V ON CHAR ACTE R IS TICS b V DS = 15V, V GS = 10V ID(ON) gFS On-S tate Drain Current Forward Transconductance 1.0 20 A 15 S 620 PF 180 PF 110 PF 12 ns 15.5 ns 42 ns 8 ns V DS =15V, ID =8A,V GS =10V 12.5 nC V DS =15V, ID =8A,V GS =4.5V 6.5 nC 1.4 nC 3.5 nC V DS = 10V, ID =8A DYNAMIC CHAR ACTE R IS TICS c Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time V DS =15V, V GS = 0V f =1.0MH Z c V DD = 15V, ID = 7A, R L=2.1 ohm, V GS = 10V, R GEN = 6 ohm tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd V DS =15V, ID = 8A, V GS =10V 2 S T M6610 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage C Min Typ Max Unit Condition Symbol b 0.8 V GS = 0V, Is =1.7A VSD 1.2 5 Notes a.Surface Mounted on FR4 Board,tІ10sec. b.Pulse Test:Pulse WidthІ300Ӵs,Duty Cycle І 2%. c.Guaranteed by design,not subject to production testing. 20 45 VGS=10V VGS=4.5V 16 VGS=3.5V ID, Drain Current (A) ID, Drain Current(A) 36 VGS=4V 27 18 VGS=3V 9 VGS=2.5V 12 Tj=125 C 8 25 C 4 0.5 1 1.5 2 2.5 0 3 VDS, Drain-to-Source Voltage (V) 0.7 1.4 2.1 2.8 3.5 4.2 VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 42 R DS (ON) , On-R es is tance Normalized 1.5 35 R DS (on) (m Ω) -55 C 0 0 0 28 V G S =4.5V 21 14 V G S =10V 7 1 1 9 18 27 36 V 1.4 1.2 V G S =4.5V I D =5A 1.1 1.0 0 45 V G S =10V I D =8A 1.3 0 25 50 75 100 125 150 T j( C ) I D , Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 3 F igure 4. On-R es is tance Variation with Drain C urrent and Temperature B V DS S , Normalized Drain-S ource B reakdown V oltage 1.2 V DS =V G S I D =250uA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 100 125 150 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 20.0 48 I D =8A Is , S ource-drain current (A) 40 R DS (on) (m Ω) 6 V th, Normalized G ate-S ource T hres hold V oltage S T M6610 32 125 C 24 16 25 C 75 C 8 0 0 2 4 6 8 10.0 25 C 1.0 0.2 10 V G S , G ate-S ource Voltage (V ) 75 C 125 C 0.4 0.6 0.8 1.0 1.2 V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T M6610 V G S , G ate to S ource V oltage (V ) 900 C, Capacitance (pF) 750 Ciss 600 450 300 Coss 150 Crss 6 5 10 15 20 25 6 4 2 0 30 2 4 6 8 10 12 14 16 VDS, Drain-to Source Voltage (V) Qg, T otal G ate C harge (nC ) F igure 8. C apacitance F igure 9. G ate C harge 50 250 100 60 I D , Drain C urrent (A) Tr S witching T ime (ns ) V DS =15V I D =7A 8 0 0 0 10 T D(off) Tf T D(on) 10 V DS =15V ,ID=7A 1 V G S =10V 1 10 R N) L im it 10m 100 s ms 1s 1 DC V G S =10V S ingle P ulse T A =25 C 0.1 0.03 0.1 60 100 300 600 6 10 (O DS 1 10 30 50 R g, G ate R es is tance ( Ω) V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics F igure 10. Maximum S afe O perating Area Thermal Resistance Normalized Transient 9 1 0.5 0.2 0.1 0.1 P DM 0.05 t1 t2 0.02 1. 2. 3. 4. 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 10 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 S T M6610 PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D A C 0.015X45± e B 0.05 TYP. A1 0.008 TYP. 0.016 TYP. H MILLIME T E R S INC HE S S Y MB OLS MIN A A1 D E H L 1.35 0.10 4.80 3.81 5.79 0.41 0± MAX 1.75 0.25 4.98 3.99 6.20 1.27 8± 6 MIN 0.053 0.004 0.189 0.150 0.228 0.016 0± MAX 0.069 0.010 0.196 0.157 0.244 0.050 8± S T M6610 SO-8 Tape and Reel Data SO-8 Carrier Tape unit:р PACKAGE SOP 8N 150п A0 6.40 B0 5.20 D0 D1 E E1 E2 P0 P1 P2 T 2.10 ӿ1.5 (MIN) ӿ1.5 + 0.1 - 0.0 12.0 ²0.3 1.75 5.5 ²0.05 8.0 4.0 2.0 ²0.05 0.3 ²0.05 K S G R V K0 SO-8 Reel UNIT:р TAPE SIZE REEL SIZE M N W W1 H 12 р ӿ330 330 ² 1 62 ²1.5 12.4 + 0.2 16.8 - 0.4 ӿ12.75 + 0.15 7 2.0 ²0.15