SUD45P03-10 Vishay Siliconix P-Channel 30-V (D-S), 150_C MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.010 @ VGS = –10 V –15 0.018 @ VGS = –4.5 V –12 VDS (V) –30 S TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD45P03-10 D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS –30 Gate-Source Voltage VGS "20 TA = 100_C Pulsed Drain Current Continuous Source Current (Diode Conduction) ID –8 IDM –100 IS –15 TA = 25_C Operating Junction and Storage Temperature Range A 70 TC = 25_C Maximum Power Dissipationb V –15 TA = 25_C Continuous Drain Currentb Unit PD TJ, Tstg W 4b _C –55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Maximum Junction-to-Ambientb RthJA 30 Maximum Junction-to-Case RthJC 1.8 Unit _ _C/W Notes a. Calculated Rating for TA = 25_C, for comparison purposes only. This cannot be used as continuous rating (see Absolute Maximum Ratings and Typical Characteristics). b. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70766 S-02596—Rev. D, 21-Nov-00 www.vishay.com 2-1 SUD45P03-10 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = –250 mA –30 VGS(th) VDS = VGS, ID = –250 mA –1.0 IGSS VDS = 0 V, VGS = "20 V "100 VDS = –30 V, VGS = 0 V –1 VDS = –30 V, VGS = 0 V, TJ = 125_C –50 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea rDS(on) gfs V VDS = –5 V, VGS = –10 V –50 VDS = –5 V, VGS = –4.5 V –20 m mA A VGS = –10 V, ID = –15 A 0.010 VGS = –10 V, ID = –15 A, TJ = 125_C 0.015 VGS = –4.5 V, ID = –15 A 0.018 VDS = –15 V, ID = –15 A nA 20 W S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 6000 VGS = 0 V, VDS = –25 V, f = 1 MHz pF 1100 700 Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Turn-On Delay Timec td(on) 15 25 tr 375 550 100 200 140 250 Rise Timec Turn-Off Delay Timec Fall Timec td(off) 90 VDS = –15 V, VGS = –10 V, ID = –45 A 150 20 nC 16 VDD = –15 V, RL = 0.33 W ID ^ –45 A, VGEN = –10 V, RG = 2.4 W tf ns Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current ISM 100 A Diode Forward Voltagea VSD IF = –45 A, VGS = 0 V 1.0 1.5 V trr IF = –45 A, di/dt = 100 A/ms 55 100 ns Source-Drain Reverse Recovery Time Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2-2 Document Number: 70766 S-02596—Rev. D, 21-Nov-00 SUD45P03-10 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 250 100 VGS = 10, 9, 8, 7 V 200 80 I D – Drain Current (A) I D – Drain Current (A) 6V 150 5V 100 4V 50 60 40 TC = 125_C 20 25_C 3V –55_C 0 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) 1 2 3 4 5 VGS – Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 80 0.05 TC = –55_C r DS(on)– On-Resistance ( W ) g fs – Transconductance (S) 0.04 25_C 60 125_C 40 20 0 0.03 VGS = 4.5 V 0.02 VGS = 10 V 0.01 0.00 0 10 20 30 40 50 0 20 40 ID – Drain Current (A) 60 80 100 ID – Drain Current (A) Capacitance Gate Charge 8000 20 V GS – Gate-to-Source Voltage (V) Ciss C – Capacitance (pF) 6000 4000 Cos 2000 s VDS = 15 V ID = 45 A 16 12 8 4 Crs s 0 0 0 5 10 15 20 25 VDS – Drain-to-Source Voltage (V) Document Number: 70766 S-02596—Rev. D, 21-Nov-00 30 0 30 60 90 120 Qg – Total Gate Charge (nC) www.vishay.com 2-3 SUD45P03-10 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.0 100 1.6 I S – Source Current (A) r DS(on)– On-Resistance ( W ) (Normalized) VGS = 10 V ID = 45 A 1.2 0.8 TJ = 150_C TJ = 25_C 10 0.4 0.0 –50 1 –25 0 25 50 75 100 125 150 0 0.3 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) TJ – Junction Temperature (_C) THERMAL RATINGS Safe Operating Area 20 500 16 100 I D – Drain Current (A) I D – Drain Current (A) Maximum Drain Current vs. Ambiemt Temperature 12 8 10, 100 ms Limited by rDS(on) 1 ms 10 10 ms 100 ms 1s 1 TA = 25_C Single Pulse 4 dc 0 0.1 0 25 50 75 100 125 150 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) TA – Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 100 500 Square Wave Pulse Duration (sec) www.vishay.com 2-4 Document Number: 70766 S-02596—Rev. D, 21-Nov-00