STP3NB80 ! POWER MOSFET GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to Higher Current Rating withstand high energy in the avalanche mode and switch Lower Rds(on) efficiently. This new high energy device also offers a Lower Capacitances drain-to-source diode with fast recovery time. Designed for Lower Total Gate Charge high voltage, high speed switching applications such as Tighter VSD Specifications power supplies, converters, power motor controls and Avalanche Energy Specified bridge circuits. PIN CONFIGURATION SYMBOL D TO- TO-220FP SOU RCE DRAIN G ATE Top View G S 1 2 3 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Current Ё Continuous Ё Pulsed Gate-to-Source Voltage Ё Continue Ё Non-repetitive Total Power Dissipation Symbol Value Unit ID 3.0 A IDM 12 VGS ±30 V VGSM ±40 V PD Derate above 25к Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy Ё TJ = 25к 35 W 0.28 W/к TJ, TSTG -65 to 150 ......к EAS 176 mJ șJC 1.70 к/W șJA 62 TL .300 (VDD = 50V, VGS = 10V, ID = 3A, L = 10mH, RG = 25ȍ) Thermal Resistance Ё Junction to Case Ё Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds к Page 1 STP3NB80 ! POWER MOSFET ORDERING INFORMATION Part Number Package STP3NB80 TO-220 Full Package ELECTRICAL CHARACTERISTICS Unless otherwise specified, T J = 25 к . Characteristic Drain-Source Breakdown Voltage Symbol Min V(BR)DSS 800 STP3NB80 Typ Max Units V (VGS = 0 V, ID = 250 µA) Drain-Source Leakage Current (VDS =800 V , VGS = 0 V ) IDSS Gate-body Leakage Current IGSS ̈́100 nA (VGS = ±30 V, VDS = 0 V) Gate-Source Leakage Current-Reverse IGSSR -100 nA (Vgsr = 20 V, VDS = 0 V) Gate Threshold Voltage VGS(th) 1 (VDS = VGS, ID = 250 µA) Static Drain-Source On-Resistance (VGS = 10 V, ID = 1.5A) * Forward Transconductance (VDS = ID(ON) X RDS(ON)max , ID = 1.5 A) * Input Capacitance Output Capacitance (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge µA (VDD = 400 V, ID = 1.5 A, VGS = 10 V, RG = 4.7ȍ) * (VDS = 640 V, ID = 3.0 A, VGS = 10 V)* 3.0 5.0 V 2.5 4.0 mhos Ciss 445 580 pF Coss 60 80 pF Crss 7 9 pF td(on) tr 12 17 10 14 ns ns td(off) tf 19 40 ns 10 20 ns Qg 17 24 Qgs 6.5 nC nC RDS(on) gFS 1.5 S Qgd 7.5 nC Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) LD 4.5 nH Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) LS 7.5 nH Gate-Drain Charge SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) Forward Turn-On Time Reverse Recovery Time (ISD = 3.0 A, dIS/dt = 100A/µs) 1.6 VSD V ton ** ns trr 650 ns * Pulse Test: Pulse Width Љ300µs, Duty Cycle Љ2% ** Negligible, Dominated by circuit inductance Page 2 STP3NB80 ! POWER MOSFET Safe Operating Area for TO-220FP Thermal Impedance forTO-220FP Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Page 3 STP3NB80 POWER MOSFET Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics Page 4