HGTG30N60B3 Data Sheet November 2004 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. • 60A, 600V, TC = 25oC • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Packaging JEDEC STYLE TO-247 Formerly Developmental Type TA49170. E C G Ordering Information PART NUMBER HGTG30N60B3 PACKAGE TO-247 BRAND COLLECTOR (FLANGE) G30N60B3 NOTE: When ordering, use the entire part number. Symbol C G E FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 ©2004 Fairchild Semiconductor Corporation HGTG30N60B3 Rev. B3 HGTG30N60B3 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG30N60B3 UNITS 600 V At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 60 A At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 30 A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 220 A Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM ±30 V Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 60A at 600V Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 208 W Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67 W/oC Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV 100 mJ Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260 oC Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 4 µs Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 10 µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 3Ω. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 600 - - V Emitter to Collector Breakdown Voltage BVECS IC = -10mA, VGE = 0V 20 - - V - - 250 µA - - 3.0 mA - 1.45 1.9 V - 1.7 2.1 V 4.2 5.0 6.0 V - - ±250 nA VCE (PK) = 480V 200 - - A VCE (PK) = 600V 60 - - A IC = IC110, VCE = 0.5 BVCES - 7.2 - V IC = IC110, VCE = 0.5 BVCES VGE = 15V - 170 190 nC VGE = 20V - 230 250 nC - 36 - ns - 25 - ns - 137 - ns - 58 - ns - 500 - µJ Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time ICES VCE(SAT) VGE(TH) VCE = BVCES IC = IC110, VGE = 15V IC = 250µA, VCE = VGE IGES VGE = ±20V SSOA TJ = 150oC, RG = 3Ω, VGE = 15V, L = 100µH VGEP QG(ON) td(ON)I trI td(OFF)I tfI TC = 25oC TC = 150oC TC = 25oC TC = 150oC IGBT and Diode at TJ = 25oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG= 3Ω L = 1mH Test Circuit (Figure 17) Turn-On Energy (Note 4) EON1 Turn-On Energy (Note 4) EON2 - 550 800 µJ Turn-Off Energy (Note 3) EOFF - 680 900 µJ ©2004 Fairchild Semiconductor Corporation HGTG30N60B3 Rev. B3 HGTG30N60B3 Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI TEST CONDITIONS MIN TYP MAX UNITS - 32 - ns - 24 - ns - 275 320 ns - 90 150 ns IGBT and Diode at TJ = 150oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG= 3Ω L = 1mH Test Circuit (Figure 17) Turn-On Energy (Note 4) EON1 - 500 - µJ Turn-On Energy (Note 4) EON2 - 1300 1550 µJ Turn-Off Energy (Note 3) EOFF - 1600 1900 µJ 0.6 oC/W Thermal Resistance Junction To Case RθJC - - NOTES: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 17. Unless Otherwise Specified VGE = 15V 50 40 30 20 10 0 25 75 50 100 125 150 225 TJ = 150oC, RG = 3Ω, VGE = 15V, L =100µH 200 175 150 125 100 75 50 25 0 0 TC , CASE TEMPERATURE (oC) VGE 15V 10V 15V 10V 0.1 5 10 20 40 60 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT ©2004 Fairchild Semiconductor Corporation tSC , SHORT CIRCUIT WITHSTAND TIME (µs) fMAX, OPERATING FREQUENCY (kHz) 10 1 300 500 400 600 700 FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA TJ = 150oC, RG = 3Ω, L = 1mH, V CE = 480V TC fMAX1 = 0.05 / (td(OFF)I + td(ON)I) o fMAX2 = (PD - PC) / (EON2 + EOFF) 75 C oC 75 PC = CONDUCTION DISSIPATION 110oC (DUTY FACTOR = 50%) 110oC RØJC = 0.6oC/W, SEE NOTES 200 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE 100 100 20 500 VCE = 360V, RG = 3Ω, TJ = 125oC 18 450 16 400 ISC 14 350 12 300 10 250 tSC 8 200 6 150 10 11 12 13 14 ISC, PEAK SHORT CIRCUIT CURRENT (A) ICE , DC COLLECTOR CURRENT (A) 60 ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 15 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 4. SHORT CIRCUIT WITHSTAND TIME HGTG30N60B3 Rev. B3 HGTG30N60B3 Unless Otherwise Specified (Continued) 225 DUTY CYCLE <0.5%, VGE = 10V 200 PULSE DURATION = 250µs 175 TC = 150oC TC = -55oC 150 125 TC = 25oC 100 75 50 25 0 0 2 6 4 8 10 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 350 DUTY CYCLE <0.5%, VGE = 15V PULSE DURATION = 250µs 300 250 TC = -55oC 200 TC = 150oC 150 100 TC = 25oC 50 0 0 FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE TJ = 25oC, TJ = 150oC, VGE = 10V 4 3 2 1 TJ = 25oC, TJ = 150oC, VGE = 15V 0 10 20 30 40 50 5 6 7 RG = 3Ω, L = 1mH, VCE = 480V 3.5 3.0 2.5 2.0 TJ = 150oC, VGE = 10V OR 15V 1.5 1.0 TJ = 25oC, VGE = 10V OR 15V 0.5 0 10 60 20 30 40 50 60 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 250 RG = 3Ω, L = 1mH, VCE = 480V RG = 3Ω, L = 1mH, VCE = 480V TJ = 25oC, TJ = 150oC, VGE = 10V 50 200 45 TJ = 25oC, TJ = 150oC, VGE = 10V 40 35 trI , RISE TIME (ns) tdI , TURN-ON DELAY TIME (ns) 4 4.0 ICE , COLLECTOR TO EMITTER CURRENT (A) 55 3 4.5 RG = 3Ω, L = 1mH, VCE = 480V 5 2 FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE EOFF, TURN-OFF ENERGY LOSS (mJ) EON2 , TURN-ON ENERGY LOSS (mJ) 6 1 VCE , COLLECTOR TO EMITTER VOLTAGE (V) VCE , COLLECTOR TO EMITTER VOLTAGE (V) TJ = 25oC, TJ = 150oC, VGE = 15V 150 100 50 30 TJ = 25oC, TJ = 150oC, VGE = 15V 25 10 20 30 40 50 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT ©2004 Fairchild Semiconductor Corporation 60 0 10 20 30 40 50 60 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT HGTG30N60B3 Rev. B3 HGTG30N60B3 Typical Performance Curves Unless Otherwise Specified (Continued) 120 RG = 3Ω, L = 1mH, VCE = 480V RG = 3Ω, L = 1mH, VCE = 480V 250 tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) 300 TJ = 150oC, VGE = 10V, VGE = 15V TJ = 25oC, VGE = 10V, VGE = 15V 200 80 60 150 100 10 20 40 30 50 VGE , GATE TO EMITTER VOLTAGE (V) ICE, COLLECTOR TO EMITTER CURRENT (A) 16 DUTY CYCLE <0.5%, VCE = 10V PULSE DURATION = 250µs TC = -55oC 200 TC = 150oC TC = 25oC 100 50 5 6 7 8 9 10 40 50 60 11 Ig (REF) = 1mA, RL = 10Ω, TC = 25oC 14 12 VCE = 600V 10 8 6 VCE = 200V 4 VCE = 400V 2 0 4 30 FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT 300 150 20 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT 250 TJ = 25oC, VGE = 10V AND 15V 40 10 60 ICE , COLLECTOR TO EMITTER CURRENT (A) 0 TJ = 150oC, VGE = 10V AND 15V 100 0 100 50 150 200 QG , GATE CHARGE (nC) VGE, GATE TO EMITTER VOLTAGE (V) FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS 10 FREQUENCY = 1MHz C, CAPACITANCE (nF) 8 CIES 6 4 COES 2 CRES 0 0 5 10 15 20 25 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE ©2004 Fairchild Semiconductor Corporation HGTG30N60B3 Rev. B3 HGTG30N60B3 ZθJC , NORMALIZED THERMAL RESPONSE Typical Performance Curves Unless Otherwise Specified (Continued) 100 0.50 0.20 0.10 10-1 0.05 0.02 t1 PD 0.01 10-2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC SINGLE PULSE 10-5 10-4 10-3 10-2 10-1 t1 , RECTANGULAR PULSE DURATION (s) t2 100 101 FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms HGTG30N60B3D 90% 10% VGE EON2 EOFF L = 1mH VCE RG = 3Ω 90% + - ICE VDD = 480V 10% td(OFF)I tfI trI td(ON)I FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT ©2004 Fairchild Semiconductor Corporation FIGURE 18. SWITCHING TEST WAVEFORMS HGTG30N60B3 Rev. B3 HGTG30N60B3 Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. ©2004 Fairchild Semiconductor Corporation fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 18. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 18. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). HGTG30N60B3 Rev. B3 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC Across the board. Around the world.™ OPTOPLANAR™ PACMAN™ The Power Franchise POP™ Programmable Active Droop™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I13