SUP40N10-35 Vishay Siliconix New Product N-Channel 105-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 105 FEATURES rDS(on) (W) ID (A) 0.035 @ VGS = 10 V 37.5 0.038 @ VGS = 6 V 36.0 D TrenchFETr Power MOSFETS D 175_C Junction Temperature APPLICATIONS D Automotive − Motor Drives − 12-V Systems D Note Book PC adaptors D TO-220AB G G D S S Top View N-Channel MOSFET Ordering Information: SUP40N10-35—E3 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25_C Continuous Drain Current (TJ = 175_C) TC = 125_C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya L = 0.1 mH TC = 25_C Maximum Power Dissipationa TA = 25_Cc Operating Junction and Storage Temperature Range Symbol Limit VDS 105 VGS "20 ID 21.5 75 IAR 35 PD V 37.5 IDM EAR Unit 61 107b 3.75 A mJ W TJ, Tstg −55 to 175 _C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter PCB Mountc J Junction-to-Ambient ti t A bi t Junction-to-Case (Drain) Free Air 40 RthJA RthJC 62.5 _C/W C/W 1.4 Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1” square PCB (FR-4 material). Document Number: 72797 S-40445—Rev. A, 15-Mar-04 www.vishay.com 1 SUP40N10-35 Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = 250 mA 105 VGS(th) VDS = VGS, ID = 250 mA 2 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 105 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage g Drain Current On-State Drain Currenta Drain Source On-State Drain-Source On State Resistancea IDSS VDS = 105 V, VGS = 0 V, TJ = 125_C 50 VDS = 105 V, VGS = 0 V, TJ = 175_C 250 ID(on) rDS(on) DS( ) 4 VDS w 5 V, VGS = 10 V 75 VGS = 10 V, ID = 15 A 0.026 0.035 VGS = 6 V, ID = 10 A 0.028 0.038 VGS = 10 V, ID = 15 A, TJ = 125_C gfs VDS = 15 V, ID = 15 A nA mA m A 0.063 VGS = 10 V, ID = 15 A, TJ = 175_C Forward Transconductancea V W 0.077 10 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 90 Total Gate Chargec Qg 35 Gate-Source Chargec Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Qgs 2400 VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 50 V,, VGS = 10 V,, ID = 40 A pF 60 11 nC Qgd 9 Rg 1.7 td(on) 11 20 12 20 30 45 12 20 tr td(off) VDD = 50 V, RL = 1.25 W ID ^ 40 A, VGEN = 10 V, Rg = 2.5 W tf Source-Drain Diode Ratings and Characteristics (TC = Continuous Current 270 W 25_C)b IS 37.5 Pulsed Current ISM 75 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 30 A, VGS = 0 V trr IRM(REC) Qrr ns IF = 30 A, di/dt = 100 A/ms A 1.0 1.5 V 60 100 ns 5 8 A 0.15 0.4 mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72797 S-40445—Rev. A, 15-Mar-04 SUP40N10-35 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 75 75 VGS = 10 thru 6 V 60 45 I D − Drain Current (A) I D − Drain Current (A) 60 5V 30 15 45 30 TC = 125_C 15 25_C 4V −55_C 0 0 0 2 4 6 8 10 0 1 VDS − Drain-to-Source Voltage (V) 2 3 4 5 6 VGS − Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 100 0.08 g fs − Transconductance (S) 80 r DS(on) − On-Resistance ( W ) TC = −55_C 25_C 60 125_C 40 20 0 0.06 0.04 VGS = 6 V VGS = 10 V 0.02 0.00 0 15 30 45 60 0 75 15 30 ID − Drain Current (A) V GS − Gate-to-Source Voltage (V) C − Capacitance (pF) 1800 1200 600 Crss 75 Gate Charge 20 Ciss 2400 60 ID − Drain Current (A) Capacitance 3000 45 Coss 0 VDS = 50 V ID = 40 A 16 12 8 4 0 0 20 40 60 80 VDS − Drain-to-Source Voltage (V) Document Number: 72797 S-40445—Rev. A, 15-Mar-04 100 0 10 20 30 40 50 60 70 Qg − Total Gate Charge (nC) www.vishay.com 3 SUP40N10-35 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2.0 On-Resistance vs. Junction Temperature 100 Source-Drain Diode Forward Voltage VGS = 10 V ID = 15 A I S − Source Current (A) rDS(on) − On-Resiistance (Normalized) 2.5 1.5 1.0 0.5 0.0 −50 −25 0 25 50 75 100 125 150 TJ = 150_C 10 1 0 175 0.3 TJ − Junction Temperature (_C) Drain-Source Breakdown Voltage (V) I Dav (a) 1 IAV (A) @ TA = 150_C 0.1 0.0001 0.001 0.01 tin (Sec) www.vishay.com 4 0.1 1.2 140 IAV (A) @ TA = 25_C 0.00001 0.9 Drain-Source Breakdown Voltage vs. Junction Temperature 100 10 0.6 VSD − Source-to-Drain Voltage (V) Avalanche Current vs. Time 1000 TJ = 25_C 1 135 ID = 10 mA 130 125 120 115 110 105 −50 −25 0 25 50 75 100 125 150 175 TJ − Junction Temperature (_C) Document Number: 72797 S-40445—Rev. A, 15-Mar-04 SUP40N10-35 Vishay Siliconix New Product THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature Limited by rDS(on) 100 I D − Drain Current (A) I D − Drain Current (A) 40 30 20 10 0 10 ms 100 ms 10 1 ms 10 ms 1 dc, 100 ms TC = 25_C Single Pulse 0.1 0 25 50 75 100 125 150 175 0.1 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Case 2 1 1 VDS − Drain-to-Source Voltage (V) TC − Ambient Temperature (_C) Normalized Effective Transient Thermal Impedance Safe Operating Area 1000 50 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) Document Number: 72797 S-40445—Rev. A, 15-Mar-04 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1