Inchange Semiconductor Product Specification 2SC3851 2SC3851A Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SA1488/1488A APPLICATIONS ・Audio and PPC high voltage power supply ,and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol 体 导 半 Absolute maximum ratings (Ta=25℃) 固电 SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS C I M E S E G N A H 2SC3851 Collector-base voltage INC 2SC3851A Open emitter 2SC3851 Collector-emitter voltage Emitter-base voltage OND R O T UC VALUE UNIT 80 V 100 60 Open base 2SC3851A V 80 Open collector 6 V IC Collector current 4 A IB Base current 1 A PC Collector dissipation 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC3851 2SC3851A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO PARAMETER Collector-emitter breakdown voltage CONDITIONS 2SC3851 ICBO Collector-emitter saturation voltage Collector cut-off current TYP. V 80 IC=2.0A;IB=0.2A 0.5 V 2SC3851 VCB=80V;IE=0 0.1 mA 2SC3851A VCB=100V;IE=0 0.1 mA 0.1 mA Emitter cut-off current VEB=6V; IC=0 hFE DC current gain IC=1A ; VCE=4V fT Transition frequency IC=0.2A ; VCE=12V 15 COB Output capacitance IE=0 ; VCB=10V;f=1MHz 60 ton ts tf 体 导 半 固电 Turn-on time INC Fall time 40 320 MHz TOR C U D ON C I M E SE G N A H Storage time UNIT 60 IEBO Switching time MAX IC=25mA ; IB=0 2SC3851A VCEsat MIN IC=2.0A IB1=-IB2=0.2A VCC=12V ,RL=6Ω 2 pF 0.20 μs 1.00 μs 0.30 μs Inchange Semiconductor Product Specification 2SC3851 2SC3851A Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN D N O IC Fig.2 Outline dimensions 3 R O T UC Inchange Semiconductor Product Specification 2SC3851 2SC3851A Silicon NPN Power Transistors 体 导 半 固电 EM S E NG A H C IN 4 D N O IC R O T UC