Inchange Semiconductor Product Specification 2SB1064 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SD1505 ・Low collector saturation voltage APPLICATIONS ・Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol 导体 半 电 固 Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER Collector-base voltage Emitter-base voltage CONDITIONS VALUE UNIT -60 V Open base -50 V Open collector -5 V -3 A IC M E ES G N A INCH Collector-emitter voltage OND R O T UC Open emitter IC Collector current ICM Collector current-peak -4.5 A IB Base current -0.5 A PC Collector power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SB1064 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,IB=0 -50 V V(BR)CBO Collector-base breakdown voltage IC=-50μA ,IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-50μA ,IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A -1.0 V VBEsat Base-emitter saturation voltage IC=-2A; IB=-0.2A -1.5 V ICBO Collector cut-off current VCB=-40V; IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -1.0 μA hFE COB fT CONDITIONS 导体 半 电 固 DC current gain IC=-0.5A ; VCE=-3V Output capacitance IE=0 ; VCB=-10V,f=1MHz IC=-0.5A ; VCE=-5V 2 TYP. MAX R O T UC 60 D N O IC M E S GE N A H INC Transition frequency MIN UNIT 320 50 pF 70 MHz Inchange Semiconductor Product Specification 2SB1064 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3