Inchange Semiconductor Product Specification 2SD2599 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P(H)IS package ・High voltage;high speed ・Low saturation voltage ・Bult-in damper diode APPLICATIONS ・Horizontal deflection output for color TV PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS VALUE UNIT Collector-base voltage Open emitter 1500 V Collector-emitter voltage Open base 600 V Emitter-base voltage Open collector 5 V 3.5 A IC Collector current ICM Collector current-peak 7 A IB Base current 1 A PC Total power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD2599 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS MIN TYP. MAX Emitter-base breakdown voltage IC=300mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=3A; IB=0.8A 5 8 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.8A 0.9 1.5 V ICBO Collector cut-off current VCB=1500V; IE=0 1 mA IEBO Emitter cut-off current VEB=5V; IC=0 66 200 mA hFE DC current gain IC=0.5A ; VCE=5V 8 25 VF Diode forward voltage IF=3.5A Cob fT 5 UNIT V 1.5 2.0 R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH V Collector output capacitance IE=0 ; VCB=10V,f=1MHz 55 pF Transition frequency IC=0.1A ; VCE=10V 3 MHz Switching times : ts Storage time 7.5 10 μs 0.5 1.0 μs ICP=3A;IB1=0.8A fH =15.75kHz tf Fall time 2 Inchange Semiconductor Product Specification 2SD2599 Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3 Inchange Semiconductor Product Specification 2SD2599 Silicon NPN Power Transistors R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH 4