2N5210/MMBT5210 2N5210/MMBT5210 NPN General Purpose Amplifier C This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. C BE E TO-92 B SOT-23 Mark: 3M Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 50 V Collector-Base Voltage 50 V Emitter-Base Voltage 4.5 V IC Collector Current - Continuous 100 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C VCEO Collector-Emitter Voltage VCBO VEBO *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 2002 Fairchild Semiconductor Corporation Max. 2N5210 625 5.0 83.3 MMBT5210 350 2.8 200 357 Units mW mW/°C °C/W °C/W 2N5210, Rev B (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 50 V V(BR)CBO Collector-Base Breakdown Voltage IC = 0.1 mA, IE = 0 50 ICBO Collector Cutoff Current VCB = 35 V, IE = 0 50 nA IEBO Emitter Cutoff Current VEB = 3.0 V, IC = 0 50 nA V 2N5210/MMBT5210 NPN General Purpose Amplifier ON CHARACTERISTICS hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage IC = 100 µA, VCE = 5.0 V IC = 1.0 mA, VCE = 5.0 V IC = 10 mA, VCE = 5.0 V* IC = 10 mA, IB = 1.0 mA VBE(on) Base-Emitter On Voltage IC = 1.0 mA, VCE = 5.0 V 200 250 250 600 0.7 V 0.85 V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Ccb Collector-Base Capacitance hfe Small-Signal Current Gain NF Noise Figure *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% IC = 500 µA,VCE = 5.0 V, f= 20 MHz VCB = 5.0 V, IE = 0, f = 100 kHz 30 IC = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz IC = 20 µA, VCE = 5.0 V, RS = 22 kΩ, f = 10 Hz to 15.7 kHz IC = 20 µA, VCE = 5.0 V, RS = 10 kΩ, f = 1.0 kHz 250 MHz 4.0 pF 900 2.0 dB 3.0 dB 3 (continued) Typical Pulsed Current Gain vs Collector Current 1200 V C E = 5.0V o 125 C 1000 800 o 25 C 600 400 o - 40 C 200 0 0.01 0.03 0.3 0.1 3 1 30 10 100 VBEON - BASE-EMITTER ON VOLTAGE (V) hFE - TYPICAL PULSED CURRENT GAIN Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.30 0.25 β = 10 0.20 o 125 C 0.15 o 25 C 0.10 0.05 o - 40 C 0.1 1 o - 40 C 0.8 o 25 C o 125 C 0.4 β = 10 0.2 0.1 1 10 100 VBEON - BASE-EMITTER ON VOLTAGE (V) 1.0 1.0 o 0.8 - 40 C o 25 C 0.6 o 125 C 0.4 V C E = 5.0V 0.2 0.1 1 10 I C - COLLECTO R CURRENT (m A) Collector-Cutoff Current vs Ambient Temperature 10 VCB = 45V 1 0.1 25 100 Base-Emitter ON Voltage vs Collector Current I C - COLLECTO R CURRENT (mA) I CBO - COLLE CTOR CURRENT (nA) VBESAT - COLLECTOR-EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 0.6 10 I C - COLLECTOR CURR EN T (m A) I C - COLLECTOR CURRENT (m A) 50 75 100 125 T A - AMBIE NT TEMP ERATURE ( ° C) 150 2N5210/MMBT5210 NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Input and Output Capacitance vs Reverse Bias Voltage Contours of Constant Gain Bandwidth Product (f T ) V CE - COLLECTOR VOLTAGE (V) 5 CAPACITANCE (pF) f = 1.0 MHz 4 3 C te 2 C ob 1 0 4 8 12 16 REVERSE BIAS VOLTAGE (V) 175 MHz 7 5 150 MHz 3 2 125 MHz 100 MHz 75 MHz 1 0.1 20 Normalized Collector-Cutoff Current vs Ambient Temperature ° 1000 100 5 V CE = 5.0 V 100 10 1 25 50 75 100 125 T A - AMBIE NT TEMPERATURE ( °C) 150 4 BANDWIDTH = 15.7 kHz I C = 30 µA 2 1 I C = 10 µA 0 1,000 PD - POWER DISSIPATION (W) I C = 1.0 mA, R S = 500 Ω I C = 1.0 mA, Ω R S = 5.0 kΩ 2 V CE = 5.0V 0 0.0001 0.001 0.01 0.1 1 f - FREQUENCY (MHz) 10,000 20,000 50,000 100,000 1.00 I C = 100 µA, Ω R S = 10 kΩ 4 5,000 Base-Emitter Saturation Voltage vs Collector Current I C = 200 µA, Ω R S = 10 kΩ 6 2,000 R S - SOURCE RESISTANCE (Ω ) Noise Figure vs Frequency 8 3 I C = 100 µA 3 10 NF - NOISE FIGURE (dB) 1 10 I C - COLLECTOR CURRENT (mA) Wideband Noise Frequency vs Source Resistance NF - NOISE FIGURE (dB) CHARACTERIS TIC S RELATI VE TO VALUE AT T A = 25 C 0 10 2N5210/MMBT5210 NPN General Purpose Amplifier 10 100 0.75 TO-92 0.50 SOT-23 0.25 0.00 0 25 50 75 100 o TEMPERATURE ( C) 125 150 (continued) Typical Characteristics (continued) Contours of Constant Narrow Band Noise Figure 10,000 R S - SOURCE RESISTANCE ( Ω ) R S - SOURCE RESISTANCE ( Ω ) Contours of Constant Narrow Band Noise Figure 3.0 dB 5,000 4.0 dB 2,000 6.0 dB 1,000 8.0 dB 500 V CE = 5.0 V 200 f = 100 Hz BANDWIDTH = 20 Hz 10 dB 12 dB 14 dB 100 1 10,000 5,000 2.0 dB 2,000 3.0 dB 1,000 4.0 dB 500 V CE = 5.0 V f = 1.0 kHz BANDWIDTH = 200 Hz 200 1 1,000 10000 1.0 dB 2.0 dB 3.0 dB 1000 4.0 dB 500 V CE = 5.0V f = 10kHz BANDWIDTH = 2.0kHz 200 100 1 6.0 dB 10 100 I C - COLLECTOR CURRENT ( µ A) 10 100 I C- COLLECTOR CURRENT ( µ A) 1,000 Contours of Constant Narrow Band Noise Figure 8.0 dB 1000 R S - SOURCE RESISTANCE (Ω ) R S - SOURCE RESISTANCE (Ω ) Contours of Constant Narrow Band Noise Figure 2000 8.0 dB 100 10 100 I C - COLLECTOR CURRENT ( µ A) 5000 6.0 dB 10000 5000 2000 1000 2.0 dB 3.0 dB VCE = 4.0 dB 5.0V f = 1.0 MHz 200 BANDWIDTH 7.0 dB = 200kHz 8.0 dB 100 0.01 0.1 1 I C - COLLECTOR CURRENT ( µ A) 500 5.0 dB 6.0 dB 10 2N5210/MMBT5210 NPN General Purpose Amplifier (continued) Typical Common Emitter Characteristics h fe 1.3 h ie h oe 1.2 h re 1.1 h oe h re 1 h ie 0.9 0.8 I C = 1.0mA f = 1.0kHz T A = 25°C h fe 0 5 10 15 20 V CE - COLLECTOR VOLTAGE (V) 25 Typical Common Emitter Characteristics CHARACTE RI STICS RE LATIV E TO VA LUE (TA =25°C) 1.4 1.5 1.4 1.3 1.2 h ie VCE = 5.0V f = 1.0kHz I C = 1.0mA h re h fe h oe 1.1 1 0.9 0.8 h oe 0.7 h fe 0.6 h re 0.5 -100 h ie -50 0 50 100 T J - JUNCTIO N TEMP ERATURE (° C) 150 Typical Common Emitter Characteristics CHARACTERISTICS RELATIVE TO VALUE(I C =1mA) CHARACTERISTI CS RELATI VE TO VALUE(VCE =5V) Typical Common Emitter Characteristics (f = 1.0 kHz) 2N5210/MMBT5210 NPN General Purpose Amplifier 100 f = 1.0kHz h oe 10 h ie and h re h re 3 1 h oe h fe h ie 0.1 0.01 0.1 0.2 h fe 0.5 1 2 5 10 20 I C - COLLECTOR CURRENT (mA) 50 100 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4