isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2488 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 150V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SA1064 APPLICATIONS ·Designed for AF amplifier, high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s i . w PARAMETER w w VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO n c . i m e VALUE UNIT 150 V 150 V Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 12 A PC Collector Power Dissipation @TC=25℃ 100 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2488 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A 2.0 V VBE(on) Base-Emitter On Voltage IC= 8A; VCE= 5V 2.5 V ICBO Collector Cutoff Current VCB= 70V; IE= 0 1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 2 mA hFE-1 DC Current Gain hFE-2 DC Current Gain fT CONDITIONS w hFE-2 Classifications R Q 40-80 60-120 P O 90-180 140-280 isc Website：www.iscsemi.cn TYP. n c . i m e s c is IC= 1A; VCE= 5V 40 IC= 8A; VCE= 5V 20 IC= 0.5A; VCE= 10V MAX 150 UNIT V B . w w Current-Gain—Bandwidth Product MIN 280 50 MHz