Inchange Semiconductor Product Specification 2SC4531 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P(H)IS package ・High voltage,high speed ・Low saturation voltage ・Bult-in damper diode APPLICATIONS ・Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS VALUE UNIT Collector-base voltage Open emitter 1500 V Collector-emitter voltage Open base 600 V Emitter-base voltage Open collector 5 V IC Collector current 10 A ICM Collector current-Peak 20 A IB Base current 5 A PC Total power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC4531 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS MIN TYP. MAX Emitter-base breakdown voltage IE=200mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=7A; IB=1.7A 5 V VBEsat Base-emitter saturation voltage IC=7A; IB=1.7A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 66 200 mA hFE DC current gain IC=1A ; VCE=5V 8 Cob Collector output capacitance IE=0 ; VCB=10V,f=1MHz VF fT 5 UNIT V 100 210 TOR 体 U 导 D 半 N O C 固电 I EM S E G N A INCH Diode forward voltage IF=7A Transition frequency IC=0.1A ; VCE=10V 1 pF 1.5 1.8 3 V MHz Switching times resistive load ts tf Storage time ICP=7A;IB1 =1.4A IB2 =-2.8A; RL=28.5Ω Fall time 2 1.8 2.5 μs 0.1 0.2 μs Inchange Semiconductor Product Specification 2SC4531 Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3 Inchange Semiconductor Product Specification 2SC4531 Silicon NPN Power Transistors R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH 4