2PD2150 20 V, 3 A NPN low VCEsat (BISS) transistor Rev. 02 — 2 January 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: 2PB1424. 1.2 Features n n n n n Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications n n n n n n DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Power switches (e.g. motors, fans) Thin Film Transistor (TFT) backlight inverter 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 20 V IC collector current - - 3 A ICM peak collector current single pulse; tp ≤ 1 ms - - 5 A VCEsat collector-emitter saturation voltage IC = 2 A; IB = 0.1 A - 0.2 0.5 V [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. [1] 2PD2150 NXP Semiconductors 20 V, 3 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description 1 emitter 2 collector 3 base Simplified outline Symbol 2 3 3 2 1 1 sym042 3. Ordering information Table 3. Ordering information Type number 2PD2150 Package Name Description Version SC-62 plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 4. Marking Table 4. Marking codes Type number Marking code 2PD2150 M2 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 40 V VCEO collector-emitter voltage open base - 20 V VEBO emitter-base voltage open collector - 6 V IC collector current - 3 A ICM peak collector current single pulse; tp ≤ 1 ms - 5 A Ptot total power dissipation Tamb ≤ 25 °C [1] - 0.5 W [2] - 2 W Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on a ceramic PCB, Al2O3, standard footprint. 2PD2150_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 02 — 2 January 2007 2 of 13 2PD2150 NXP Semiconductors 20 V, 3 A NPN low VCEsat (BISS) transistor 006aaa943 2.4 (1) Ptot (W) 1.6 0.8 (2) 0 −75 −25 0 25 75 125 175 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, standard footprint Fig 1. Power derating curves 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Typ Max Unit - - 250 K/W [2] - - 62 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on a ceramic PCB, Al2O3, standard footprint. 2PD2150_2 Product data sheet Min [1] © NXP B.V. 2007. All rights reserved. Rev. 02 — 2 January 2007 3 of 13 2PD2150 NXP Semiconductors 20 V, 3 A NPN low VCEsat (BISS) transistor 006aaa944 103 duty cycle = Zth(j-a) (K/W) 1 102 0.75 0.5 0.33 0.1 0.2 0.05 10 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aaa945 102 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 10 0.2 0.33 0.1 0.05 0.02 1 0.01 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Ceramic PCB, Al2O3, standard footprint Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 2PD2150_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 02 — 2 January 2007 4 of 13 2PD2150 NXP Semiconductors 20 V, 3 A NPN low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = 30 V; IE = 0 A - - 0.1 µA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A - - 0.1 µA hFE DC current gain VCE = 2 V; IC = 0.1 A 180 - 390 - 0.2 0.5 V VCEsat collector-emitter saturation voltage IC = 2 A; IB = 0.1 A fT transition frequency VCE = 2 V; IE = −0.5 A; f = 100 MHz - 220 - MHz Cib common-base input capacitance VEB = 5 V; IE = ie = 0 A; f = 1 MHz - 180 - pF Cob common-base output capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz - 20 - pF [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2PD2150_2 Product data sheet [1] © NXP B.V. 2007. All rights reserved. Rev. 02 — 2 January 2007 5 of 13 2PD2150 NXP Semiconductors 20 V, 3 A NPN low VCEsat (BISS) transistor 006aaa956 104 006aaa957 2.0 IB (mA) = 20 IC (A) IC (mA) 8 10 18 16 14 12 1.6 103 6 1.2 (1) 102 (2) 4 (3) 0.8 2 10 0.4 0 1 0 0.2 0.4 0.6 0.8 1.0 0 1.2 1.4 VBE (V) 0.2 0.4 0.6 0.8 1.0 VCE (V) Tamb = 25 °C VCE = 2 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −40 °C Fig 4. Collector current as a function of base-emitter voltage; typical values 006aaa958 5 30 50 IC 45 (A) 40 4 35 Fig 5. Collector current as a function of collector-emitter voltage; typical values 006aaa959 103 (1) (2) (3) 25 hFE 20 102 15 3 10 2 10 IB (mA) = 5 1 0 1 0 1 2 3 4 5 1 10 Tamb = 25 °C 102 103 104 IC (mA) VCE (V) VCE = 2 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −40 °C Fig 6. Collector current as a function of collector-emitter voltage; typical values Fig 7. DC current gain as a function of collector current; typical values 2PD2150_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 02 — 2 January 2007 6 of 13 2PD2150 NXP Semiconductors 20 V, 3 A NPN low VCEsat (BISS) transistor 006aaa960 1 VCEsat (V) 006aaa961 1 VCEsat (V) 10−1 10−1 (1) (2) (3) (1) (2) (3) 10−2 10−2 10−3 1 10 102 103 104 10−3 1 102 10 103 IC (mA) IC/IB = 10 IC/IB = 20 (1) Tamb = 100 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −40 °C (3) Tamb = −40 °C Fig 8. Collector-emitter saturation voltage as a function of collector current; typical values 006aaa962 1 104 IC (mA) VCEsat (V) Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values 006aaa963 103 fT (MHz) (1) (2) (3) 10−1 102 10−2 10 10−3 1 10 102 103 104 1 −1 −10 IC (mA) −103 −102 IE (mA) Tamb = 25 °C; VCE = 2 V IC/IB = 50 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −40 °C Fig 10. Collector-emitter saturation voltage as a function of collector current; typical values Fig 11. Transition frequency as a function of emitter current; typical values 2PD2150_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 02 — 2 January 2007 7 of 13 2PD2150 NXP Semiconductors 20 V, 3 A NPN low VCEsat (BISS) transistor 006aaa964 103 Cib (pF) 006aaa965 103 Cob (pF) 102 10 10−1 102 1 102 10 10 10−1 VEB (V) 102 10 VCB (V) Tamb = 25 °C; f = 1 MHz; IE = ie = 0 A Tamb = 25 °C; f = 1 MHz; IE = ie = 0 A Fig 12. Common-base input capacitance as a function of emitter-base voltage; typical values Fig 13. Common-base output capacitance as a function of collector-base voltage; typical values 2PD2150_2 Product data sheet 1 © NXP B.V. 2007. All rights reserved. Rev. 02 — 2 January 2007 8 of 13 2PD2150 NXP Semiconductors 20 V, 3 A NPN low VCEsat (BISS) transistor 8. Package outline 4.6 4.4 1.8 1.4 1.6 1.4 2.6 2.4 4.25 3.75 1 2 1.2 0.8 3 0.53 0.40 1.5 0.48 0.35 0.44 0.23 3 Dimensions in mm 06-08-29 Fig 14. Package outline SOT89 (SC-62/TO-243) 9. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number 2PD2150 [1] Package SOT89 Description 8 mm pitch, 12 mm tape and reel 1000 4000 -115 -135 For further information and the availability of packing methods, see Section 13. 2PD2150_2 Product data sheet Packing quantity © NXP B.V. 2007. All rights reserved. Rev. 02 — 2 January 2007 9 of 13 2PD2150 NXP Semiconductors 20 V, 3 A NPN low VCEsat (BISS) transistor 10. Soldering 4.75 2.25 2.00 1.90 1.20 solder lands 0.85 0.20 solder resist occupied area 1.70 1.20 solder paste 4.60 4.85 0.50 1.20 Dimensions in mm 1.20 1.00 (3x) 3 2 1 msa442 0.60 (3x) 0.70 (3x) 3.70 3.95 SOT89 standard mounting conditions for reflow soldering Fig 15. Reflow soldering footprint SOT89 (SC-62/TO-243) 6.60 2.40 3.50 2 3 1 solder lands 7.60 0.50 1.20 solder resist occupied area 3.00 Dimensions in mm preferred transport direction during soldering 1.50 0.70 5.30 msa423 Not recommended for wave soldering Fig 16. Wave soldering footprint SOT89 (SC-62/TO-243) 2PD2150_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 02 — 2 January 2007 10 of 13 2PD2150 NXP Semiconductors 20 V, 3 A NPN low VCEsat (BISS) transistor 11. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes 2PD2150_2 20070102 Product data sheet - 2PD2150_1 Modifications: 2PD2150_1 • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • • • • • • • • Legal texts have been adapted to the new company name where appropriate. • • • • • • • • • Figure 2: tp pulse time redefined to pulse duration Table 1 “Quick reference data”: IC collector current added Table 1 “Quick reference data”: ICM peak collector current maximum value adapted Table 1 “Quick reference data”: VCEsat collector-emitter saturation voltage added Table 5 “Limiting values”: VCEO collector-emitter voltage maximum value adapted Table 5 “Limiting values”: IC collector current maximum value adapted Table 5 “Limiting values”: ICM peak collector current maximum value adapted Table 5 “Limiting values”: Ptot total power dissipation for ceramic PCB condition added Figure 1 “Power derating curves”: adapted Table 6 “Thermal characteristics”: adapted Table 6 “Thermal characteristics”: Rth(j-a) thermal resistance from junction to ambient for ceramic PCB condition added Figure 3: added Table 7 “Characteristics”: VCEsat collector-emitter saturation voltage typical value added Table 7 “Characteristics”: fT transition frequency conditions slightly changed Table 7 “Characteristics”: Cib common-base input capacitance added Table 7 “Characteristics”: Cob common-base output capacitance added Figure 4, 6, 10, 11, 12, 13 and 16: added Figure 5, 7, 8 and 9: adapted Section 12 “Legal information”: updated 20050422 Product data sheet 2PD2150_2 Product data sheet - - © NXP B.V. 2007. All rights reserved. Rev. 02 — 2 January 2007 11 of 13 2PD2150 NXP Semiconductors 20 V, 3 A NPN low VCEsat (BISS) transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] 2PD2150_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 02 — 2 January 2007 12 of 13 2PD2150 NXP Semiconductors 20 V, 3 A NPN low VCEsat (BISS) transistor 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packing information. . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 2 January 2007 Document identifier: 2PD2150_2