SavantIC Semiconductor Product Specification 2SA1074 Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Excellent safe operating area APPLICATIONS ·For high power audio ,stepping motor and other linear applications ·Relay or solenoid drviers ·DC-DC converters inverters PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -160 V VCEO Collector-emitter voltage Open base -160 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -15 A IB Base current -7 A PC Collector power dissipation 150 W Tj Junction temperature 150 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX UNIT 0.98 /W SavantIC Semiconductor Product Specification 2SA1074 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=-0.2A ;IB=0 VCEsat-1 Collector-emitter saturation voltage IC=-4A; IB=-0.4A -1.1 V VCEsat-2 Collector-emitter saturation voltage IC=-10A; IB=-3.3A -3.0 V VBE Base-emitter on voltage IC=-4A ; VCE=-4V -1.8 V ICEO Collector cut-off current VCE=-60V; VBE(off)=0 -0.1 mA ICEV Collector cut-off current VCE=Rated Value; VBE(off)=1.5V TC=150 -1.0 -6.0 mA IEBO Emitter cut-off current VEB=-7V; IC=0 -0.1 mA hFE-1 DC current gain IC=-4A ; VCE=-4V 20 hFE-2 DC current gain IC=-10A ; VCE=-4V 5 2 MIN TYP. MAX -160 UNIT V SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2SA1074