TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542 DEVICES LEVELS 2N6762 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain – Source Voltage VDS 500 Vdc Gate – Source Voltage VGS ± 20 Vdc ID1 4.5 Adc ID2 3.0 Adc Ptl 75 (1) W Rds(on) 1.5 (2) Ω Top, Tstg -55 to +150 °C Continuous Drain Current TC = +25°C Continuous Drain Current TC = +100°C Max. Power Dissipation TC = +25°C Drain to Source On State Resistance Operating & Storage Temperature Note: (1) Derated Linearly by 0.6 W/°C for TC > +25°C (2) VGS = 10Vdc, ID = 3A TO-204AA (TO-3) 2N6762 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Drain-Source Breakdown Voltage VGS = 0V, ID = 1mAdc V(BR)DSS 500 Gate-Source Voltage (Threshold) VDS ≥ VGS, ID = 0.25mA VDS ≥ VGS, ID = 0.25mA, Tj = +125°C VDS ≥ VGS, ID = 0.25mA, Tj = -55°C VGS(th)1 VGS(th)2 VGS(th)3 2.0 1.0 Gate Current VGS = ±20V, VDS = 0V VGS = ±20V, VDS = 0V, Tj = +125°C IGSS1 IGSS2 ±100 ±200 nAdc Drain Current VGS = 0V, VDS = 400V VGS = 0V, VDS = 400V, Tj = +125°C IDSS1 IDSS2 25 0.25 µAdc mAdc rDS(on)1 rDS(on)2 1.5 1.80 Ω Ω rDS(on)3 3.3 Ω VSD 1.4 Vdc Static Drain-Source On-State Resistance VGS = 10V, ID = 3A pulsed VGS = 10V, ID = 4.5A pulsed Tj = +125°C VGS = 10V, ID = 3.0A pulsed Diode Forward Voltage VGS = 0V, ID = 4.5A pulsed T4-LDS-0151 Rev. 1 (092089) Max. Unit Vdc 4.0 Vdc 5.0 Page 1 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Drain Charge Symbol VGS = 10V, ID = 4.5A VDS = 400V Min. Qg(on) Qgs Qgd Max. 40 6.0 20 Unit nC SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time ID = 4.5A, VGS = 10Vdc, Gate drive impedance = 7.5Ω, VDD = 250Vdc Diode Reverse Recovery Time di/dt ≤ 100A/µs, VDD ≤ 30V, IF = 4.5A T4-LDS-0151 Rev. 1 (092089) Min. Max. td(on) tr td(off) tf 30 40 80 30 trr 900 Unit ns ns Page 2 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542 PACKAGE DIMENSIONS Symbol CD CH HR HR1 HT LD LL LL1 MHD MHS PS PS1 s1 Dimensions Inches Millimeters Min Max Min Max .875 22.23 .250 .360 6.35 9.14 .495 .525 12.57 13.34 .131 .188 3.33 4.78 .060 .135 1.52 3.43 .038 .043 0.97 1.09 .312 .500 7.92 12.70 .050 1.27 .151 .161 3.84 4.09 1.177 1.197 29.90 30.40 .420 .440 10.67 11.18 .205 .225 5.21 5.72 .655 .675 16.64 17.15 Notes 3, 5 3, 5 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. These dimensions should be measured at points .050 inch (1.27 mm) and .055 inch (1.40 mm) below seating plane. When gauge is not used measurement will be made at the seating plane. 4. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall. 5. Mounting holes shall be deburred on the seating plane side. 6. Drain is electrically connected to the case. 7. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. FIGURE 1. Physical dimensions of transistor (TO-204AA). T4-LDS-0151 Rev. 1 (092089) Page 3 of 3