Transistors IC SMD Type Silicon NPN Epitaxial 2SC3124 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 3 V Collector current IC 50 mA Base current IB 25 mA Collector Power Dissipation PC 150 mW Junction temperature Storage temperature Range Tj 125 Tstg -55 to +125 Electrical Characteristics Ta = 25 Max Unit Collector cut-off current Parameter Symbol ICBO VCB = 15V, IE = 0 0.1 ìA Emitter cut-off current IEBO VEB = 3V, IC = 0 1.0 ìA Collector-emitter breakdown voltage DC current gain Transition Frequency Testconditons V(BR)CEO IC=1mA,IB=0 Min Typ 15 V hFE VCE = 3 V, IC = 8mA 40 100 fT VCE = 10 V, IC = 8mA 650 1100 Collector Output Capacitance Cob Collector-BaseTime Constant Cc.rbb2 VCC=10V,IE=0,f=1MHz VCB=10V,IC=8mA,f=30MHz 200 MHz 0.9 1.3 pF 7 12 ps Marking Marking HF www.kexin.com.cn 1