Inchange Semiconductor Product Specification 2SB1436 Silicon PNP Power Transistors · DESCRIPTION ·With TO-126 package ·Complement to type 2SD2166 ·Low collector saturation voltage APPLICATIONS ·For audio power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -30 V VCEO Collector-emitter voltage Open base -20 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -5 A ICM Collector current-Peak -10 A PD Total power dissipation Ta=25℃ 1.5 TC=25℃ 5 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1436 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=-50μA ;IE=0 -30 V V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;IB=0 -20 V V(BR)EBO Emitter-base breakdown voltage IE=-50μA ;IC=0 -6 V Collector-emitter saturation voltage IC=-4A ;IB=-0.1A -1.0 V ICBO Collector cut-off current VCB=-20V; IE=0 -0.5 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.5 μA hFE DC current gain IC=-0.5A ; VCE=-2V Transition frequency IE=50mA ; VCE=-6V; f=30MHz 120 MHz Collector output capacitance IE=0 ; VCB=-20V; f=1MHz 60 pF VCEsat fT Cob B B 2 180 390 Inchange Semiconductor Product Specification 2SB1436 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3