ISC 2SC2761

Inchange Semiconductor
Product Specification
2SC2761
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor controls
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
VCBO
Collector-base voltage
Open emitter
450
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
30
A
IB
Base current
6
A
PC
Collector power dissipation
200
W
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-65~200
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC2761
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ; IB=0
400
V
V(BR)CBO
Collector-base breakdown voltage
IC=1m A ; IE=0
450
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1m A ; IC=0
7
V
VCE(sat)
Collector-emitter saturation voltage
IC=20A; IB=4A
1.5
V
VBE(sat)
Base-emitter saturation voltage
IC=20A; IB=4A
1.7
V
ICBO
Collector cut-off current
VCB=450V IE=0
100
μA
IEBO
Emitter cut-off current
VEB=7V; IC=0
100
μA
hFE
DC current gain
IC=15A ; VCE=2V
2
MIN
8
TYP.
MAX
UNIT
Inchange Semiconductor
Product Specification
2SC2761
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3