isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 250V(Min) ·Collector-Emitter Saturation Voltage:V CE(sat)= 2.0V(Max) @IC= 4A ·High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V APPLICATIONS ·Igniter applications ·High voltage switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IB Base Current-Continuous 1 A B Collector Power Dissipation @ Ta=25℃ 2.0 Collector Power Dissipation @ TC=25℃ 30 Junction Temperature 150 ℃ -55~150 ℃ W PC TJ Tstg Storage Temperature Range isc Website：www.iscsemi.cn 2SD1410 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1410 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX 250 UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.5A ; L= 40mH V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 40mA 2.5 V ICBO Collector Cutoff Current VCB= 300V; IE= 0 500 μA IEBO Emitter Cutoff Current VEB= 5V; IC=0 500 μA hFE -1 DC Current Gain IC= 2A ; VCE= 2V 2000 hFE -2 DC Current Gain IC= 4A ; VCE= 2V 200 COB Output Capacitance IE= 0 ; VCB= 10V; ftest=1MHz B B 35 pF 1.0 μs 8.0 μs 5.0 μs Switching times ton Turn-on Time tstg Storage Time tf IC= 4A , IB1= -IB2= 40mA RL= 25Ω; VCC= 100V Fall Time isc Website：www.iscsemi.cn 2 INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Website：www.iscsemi.cn isc Product Specification 2SD1410