1.2W Power Amplifier 9.0-12.0 GHZ MAAPGM0038 RO-P-DS-3060 E Features ♦ Variable Drain Voltage (4-10V) Operation ♦ MSAG™ Process ♦ High Performance Ceramic Bolt Down Package Primary Applications APGM0038 YWWXXX ♦ Point-to-Point Radio ♦ Weather Radar ♦ Airborne Radar Description The MAAPGM0038 is a packaged, 3-stage, 1.2 W power amplifier with on-chip bias networks in a bolt down ceramic package, allowing easy assembly. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate MESFET Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Pin Number RF Designator 1 No Connection 2 VGG 3 RF IN 4 VGG 5 No Connection 6 No Connection 7 VDD 8 RF OUT 9 VDD 10 No Connection Maximum Operating Conditions 1 Parameter Symbol Absolute Maximum Units Input Power PIN 21.0 dBm Drain Supply Voltage VDD +12.0 V Gate Supply Voltage VGG -3.0 V Quiescent Drain Current (No RF, 40% IDSS) IDQ 1.15 A PDISS 7.5 W Junction Temperature TJ 180 °C Storage Temperature TSTG -55 to +150 °C 230 °C Quiescent DC Power Dissipated (No RF) Processing Temperature 1. Operation outside of these ranges may reduce product reliability. 1 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. 1.2W Power Amplifier 9.0-12.0 GHZ MAAPGM0038 RO-P-DS-3060 E Recommended Operating Conditions Characteristic Drain Supply Voltage Gate Supply Voltage Input Power Symbol VDD VGG PIN Junction Temperature TJ Thermal Resistance ΘJC Package Base Temperature TB Min 4.0 -2.4 Typ 8.0 -2.0 16.0 Max 10.0 -1.3 19.0 150 12.3 Unit V V dBm °C °C/W Note 2 °C 2. Maximum Package Base Temperature = 150°C — ΘJC* VDD * IDQ Electrical Characteristics: TB = 40°C2, Z0 = 50 W, VDD = 8V, IDQ ≈ 710 mA3, Pin = 16 dBm, RG ≈ 100 Ω Parameter Symbol Minimum Typical* Maximum Units Bandwidth f — 9-12 — GHz Output Power POUT 30.5 31.5 — dBm Output Power @ 10.5 GHz POUT 30.5 31.5 32.5* dBm Power Added Efficiency PAE — 17 — % 1-dB Compression Point P1dB — 30 — dBm Small Signal Gain G 19 21 — dB Small Signal Gain @ 10.5GHz G 19 21 23* dB Input VSWR VSWR — 3 5.8 — Input VSWR @ 10.5 GHz VSWR 2.3* 3 5.8 — Output VSWR VSWR — 2.5:1 — — Gate Supply Current IGG -10 0 10 mA Gate Supply Current @ 10.5 GHz IGG -10 0 10 mA Drain Supply Current IDD — 0.9 1.1 A Drain Supply Current @ 10.5 GHz IDD 0.7* 0.9 1.1 A Noise Figure NF — 9 — dB nd 2f — -20 — dBc rd 3 Harmonic 3f — -36 — dBc Output Third Order Intercept OTOI — 40 — dBm 3 Order Intermodulation Distortion, Single Carrier Level = 21 dBm IM3 — -13 — dBm 5th Order Intermodulation Distortion, Single Carrier Level = 21 dBm IM5 — -30 — dBm 2 Harmonic rd 3. Adjust VGG between –2.4 to –1.3V to achieve indicated IDQ. 4. *Not screened-shown to indicate range of expected values. Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG ≈ -1.7V, VDD= 0 V. 2. Ramp VDD to desired voltage, typically 8 V. 3. Adjust VGG to set IDQ, (See Note 3 above). 4. Set RF input. 5. Power down sequence in reverse. Turn VGG off last. 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. 1.2W Power Amplifier 9.0-12.0 GHZ MAAPGM0038 RO-P-DS-3060 E 50 50 40 40 40 30 30 20 20 10 10 50 0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 P1dB (dBm) PAE(%) POUT (dBm) POUT PAE 30 20 10 0 0 12.5 12.0 VDD = 4 VDD = 6 VDD = 8 VDD = 10 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 Frequency (GHz) Frequency (GHz) Figure 2. 1dB Compression Point vs. Drain Voltage Figure 1. Output Power and Power Added Efficiency vs. Frequency at VDD = 8V and Pin = 16 dBm 50 1.2 1.0 40 IDS (A) POUT (dBm) 0.8 30 20 0.6 9.0 GHz 10.5 GHz 9.0 GHz 0.4 10.5 GHz 12.0 GHz 12.0 GHz 10 0.2 0 0.0 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 -10 -8 -6 -4 -2 PIN (dBm) 0 2 4 6 8 10 12 Figure 3. Output Power vs. Input Power at VDD = 8V 16 18 20 Figure 4. Drain Current vs. Input Power at VDD = 8V 50 50 40 6 Gain POUT Input VSWR PAE 40 32 30 30 24 4 20 20 16 3 10 10 8 2 0 0 4 5 6 7 8 9 10 Drain Voltage (volts) Figure 5. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at fo = 10.5 GHz Output VSWR 0 8.5 9.5 10.5 11.5 1 12.5 Frequency (GHz) Figure 6. Small Signal Gain and VSWR vs. Frequency at VDD = 8V. 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. 5 VSWR Gain (dB) 40 PAE(%) POUT (dBm) 14 Frequency (GHz) • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. 1.2W Power Amplifier 9.0-12.0 GHZ MAAPGM0038 RO-P-DS-3060 E APGM0038 Figure 5. CR-15 Package Dimensions The CR-15 is a high frequency, low thermal resistance package. The package consists of a cofired ceramic construction with a copper-tungsten base and iron-nickel-cobalt leads. The finish consists of electrolytic gold over nickel plate. 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. 1.2W Power Amplifier 9.0-12.0 GHZ MAAPGM0038 RO-P-DS-3060 E Figure 6. Recommended Bias Configuration RG (See Electrical Characteristics - Page 2) VGG VDD 0.1 µF 0.1 µF 100 pF 100 pF 100 pF APGM0038 YWWXXX RFIN RFOUT 100 pF Pin Number RF Designator 1 No Connection 2 VGG 3 RF IN 4 VGG 5 No Connection 6 No Connection 7 VDD 8 RF OUT 9 VDD 10 No Connection Assembly Instructions: This flange mount style package provides a robust interface between a highly integrated GaAs MMIC device and a circuit board which may be assembled using conventional surface mount techniques. A thin shim made of a thermally and electrically conductive, ductile material should be used prior to installation of the CR-15 to improve the thermal and electrical performance of the package to housing interface. Refer to M/A-COM Application Note #M567* for more information . For applications where surface mount components are to be installed after the CR-15 installation, this package will not be damaged when subjected to typical convection or IR oven reflow profiles. Refer to M/A-COM Application Note #M538* for maximum allowable reflow time and temperature. Alternatively, the package leads may be individually soldered. Whether an iron or hot gas soldering equipment is used, care should be taken to insure that the temperature is well controlled and electric static discharge (ESD) safe. * Application Notes can be found by going to the Site Search Page on M/A-COM’s web page (http://www.macom.com/search/search.jsp) and searching for the required Application Note. Biasing Notes: ♦ ♦ The 100pF bypass capacitors must be placed as close to the VGG and VDD pins as possible (recommended < 100 mils). A negative bias must be applied to VGG before applying a positive bias to VDD to prevent damage to the amplifier. 5 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.